Electronic device

• US 10,636,931 B1
• Filed: 10/30/2018
• Issued: 04/28/2020
• Est. Priority Date: 10/30/2018
• Status: Active Grant

• Current Assignee: InnoLux Corporation
• Original Assignee: InnoLux Corporation
• Inventors: Shibata, Junya, Inada, Toshiya
• Primary Examiner(s): Lee, Hsien Ming
• Application Number:
  US16/174,978
• Publication Number:
  US 20200135959A1
• Time in Patent Office: 546 Days
• CPC Class Codes: G02F 1/13624 having more than one switching element per pixel
• CPC Class Codes: G02F 1/136286 Wiring, e.g. gate line, drain line
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 1/13685 Top gates
• CPC Class Codes: G02F 2202/103 a-Si
• CPC Class Codes: G02F 2202/104 poly-Si
• CPC Class Codes: G06V 40/1318 using electro-optical elements or layers, e.g. electroluminescent sensing
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14625 Optical elements or arrangements associated with the device
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14678 Contact-type imagers
• CPC Class Codes: H01L 31/02019 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02164 for shielding light, e.g. light blocking layers, cold shields for infrared detectors
• CPC Class Codes: H01L 31/022408 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/02327 the optical elements being integrated or being directly associated to the device, e.g. back reflectors optical coatings H01L31/0216
• CPC Class Codes: H01L 31/032 including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
• CPC Class Codes: H01L 31/03682 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/03762 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor

Abstract

An electronic device includes a plurality of double gate thin film transistors (DGTFT). The plurality of DGTFTs includes a first DGTFT, the first DGTFT includes a substrate, a first transparent conductive layer disposed above the substrate, and a first metal layer. The first metal layer is disposed corresponding to the first transparent conductive layer. The first metal layer is electrically connected to the first transparent conductive layer.

Claims

1. An electronic device, comprising a plurality of double gate thin film transistors (DGTFT), wherein the plurality of DGTFTs comprises a first DGTFT, the first DGTFT comprising:

a substrate;

a first transparent conductive layer, disposed above the substrate;

a first metal layer, disposed corresponding to the first transparent conductive layer, wherein the first metal layer is electrically connected to the first transparent conductive layer; and

a channel layer, disposed corresponding to the first transparent conductive layer,

wherein the first metal layer extends beyond at least one of the boundaries of the channel layer, and

wherein the channel layer comprises a poly-silicon material layer.

2. The electronic device as claimed in claim 1, wherein the first DGTFT further comprises:

an insulating layer having an opening, in which a part of the first transparent conductive layer is exposed.

3. The electronic device as claimed in claim 2, wherein the first metal layer further extends in the opening to form an opening region.

4. The electronic device as claimed in claim 3, wherein further comprises:

an opaque material layer, disposed above the first transparent conductive layer, wherein the opaque material layer does not overlap the opening region in the top view of the electronic device.

5. The electronic device as claimed in claim 4, wherein further comprises:

a passivation layer, disposed between the opaque material layer and the first metal layer.

6. The electronic device as claimed in claim 3, wherein an angle of an extending direction of the first metal layer extending in the opening is greater than or equal to 85 degrees, and is less than or equal to 95 degrees, with respect to the first transparent conductive layer.

7. The electronic device as claimed in claim 6, wherein the angle is greater than or equal to 85 degrees, and is less than or equal to 90 degrees.

8. The electronic device as claimed in claim 3, further comprising:

a second DGTFT of the plurality of DGTFTs, adjacent to the first DGTFT, wherein the second DGTFT comprises;

a second transparent conductive layer, disposed above the substrate; and

the first metal layer, disposed corresponding to the second transparent conductive layer and at least partially overlapped the second transparent conductive layer in the top view of the electronic device.

9. The electronic device as claimed in claim 8, further comprises:

a second metal layer, disposed in the insulating layer and positioned between the first DGTFT and the second DGTFT.

10. The electronic device as claimed in claim 8, further comprising:

a differential subtractor circuit, wherein a terminal of the second DGTFT and a terminal of the first DGTFT adjacent to the second DGTFT are electrically connected to the differential subtractor circuit.

11. The electronic device as claimed in claim 3, wherein the plurality of DGTFTs further comprises an another first DGTFT adjacent to the first DGTFT, wherein a length in a direction of the opening region of the first DGTFT and the length in the direction of the opening region of the another first DGTFT are different.

12. The electronic device as claimed in claim 11, further comprising:

a comparator circuit, wherein a terminal of the first DGTFT and a terminal of the another first DGTFT are electrically connected to the comparator circuit.

13. The electronic device as claimed in claim 1, wherein the first metal layer has a reflectivity lower than 60% to visible light.

14. The electronic device as claimed in claim 1, wherein the first metal layer comprises a chromium material.

15. The electronic device as claimed in claim 1, further comprising:

at least one thin film transistor (TFT), adjacent to the first DGTFT.

16. The electronic device as claimed in claim 15, wherein a terminal of the at least one TFT connects to a terminal of the first DGTFT adjacent to the TFT.

17. The electronic device as claimed in claim 16, wherein a gate of the at least one TFT connects to the first metal layer of the first DGTFT adjacent to the TFT.