Process for manufacturing an implant for focal electrical stimulation of a nervous structure

• US 10,639,472 B2
• Filed: 11/19/2015
• Issued: 05/05/2020
• Est. Priority Date: 11/19/2014
• Status: Active Grant

• Current Assignee: Institut National De La Sante Et De La Recherche Medicale (Inserm) (Allianz Global Investors GmbH), Centre National De La Recherche Scientifique, Paris Chamber of Commerce, University Pierre et Marie Curie
• Original Assignee: Paris Chamber of Commerce
• Inventors: Rousseau, Lionel, Lissorgues, Gaelle, Cottance, Myline, Picaud, Serge, Degardin, Julie
• Primary Examiner(s): Holmes, Rex R
• Application Number:
  US15/527,434
• Publication Number:
  US 20190083776A1
• Time in Patent Office: 1,629 Days
• CPC Class Codes: A61N 1/025 Digital circuitry features of electrotherapy devices, e.g. memory, clocks, processors
• CPC Class Codes: A61N 1/05 for implantation or insertion into the body, e.g. heart electrode A61N1/06 takes precedence
• CPC Class Codes: A61N 1/0543 Retinal electrodes
• CPC Class Codes: A61N 1/36046 of the eye
• CPC Class Codes: H01B 13/0036 Details
• CPC Class Codes: H01B 5/14 comprising conductive layers or films on insulating-supports
• CPC Class Codes: H05K 2201/0154 Polyimide
• CPC Class Codes: H05K 3/06 the conductive material being removed chemically or electrolytically, e.g. by photo-etch process semi-additive methods H05K3/108
• CPC Class Codes: H05K 3/4682 Manufacture of core-less build-up multilayer circuits on a temporary carrier or on a metal foil

Abstract

The invention relates to a process for manufacturing at least one implant for focal electrical stimulation of a nervous structure, said implant being of the type including in a supporting structure a network of cavities at the bottom of which are placed microelectrodes, the cavities being bounded by walls erected and located around the microelectrodes, the supporting structure being produced beforehand by implementing the following steps: deposition and etching, in a planar manner, on an insulating substrate, of electrical contacts, of electrical tracks and of microelectrodes, first tracks electrically connecting the microelectrodes and the electrical contacts, second electrical tracks being electrically connected to a ground.

Claims

1. Process for manufacturing at least one implant for focal electrical stimulation or reception of a nervous structure, said implant being of the type comprising, on a substrate, a network forming cavities at the bottom of which are arranged microelectrodes, the cavities being delimited by erected walls of the network surrounding the electrodes,

wherein the substrate is previously prepared by implementing the following steps:

planar depositing and etching on a planar insulating substrate of;

electrical contacts, first electrical tracks, second electrical tracks separated from the first electrical tracks, and microelectrodes so that the electrical contacts, first and second electrical tracks and microelectrodes belong to the same basic plane,

the first electrical tracks electrically connecting the microelectrodes and electrical contacts,

the second electrical tracks being electrically connected to a ground,

depositing an insulating layer on the planar substrate, electrical tracks and microelectrodes,

etching the insulating layer to make openings at the electrical contacts and microelectrodes,

forming a network of erected walls above the insulating layer and basic plane, and forming cavities around the microelectrodes, and

wherein a metal bonding layer is deposited at least on part of the insulating layer, electrodeposition is conducted to form metal walls surrounding the cavities, said electrodeposited walls forming at least part of a metal network surrounding the cavities.

2. The process according to claim 1, wherein a network of walls is fabricated forming a grid.

3. The process according to claim 1, wherein walls are erected to form the cavities, perpendicular to the insulating layer.

4. The process according to claim 1, wherein electrodeposition is preceded by the depositing of a mould added onto said substrate, said mould then being eliminated.

5. The process according to claim 1, wherein the planar substrate comprises a first insulating polymer layer, and the planar depositing and etching of electrical contacts, electrical tracks and microelectrodes are performed on the first insulating polymer layer.

6. The process according to claim 1, wherein the substrate is previously prepared by depositing an electrode on the planar insulating substrate followed by the depositing and etching of electrical contacts and electrical tracks-, and in that an insulating polymer layer is deposited after elimination of the substrate which follows after chemical etching.

7. The process according to claim 1, wherein the walls and microelectrodes are covered with a polymer layer for insulation thereof, this polymer layer then being opened on an upper part of the microelectrodes and on an upper part of the metal walls.

8. The process according to claim 1, wherein the metal walls are connected to the second tracks.

9. The process according to claim 1, wherein walls are deposited at a distance away from the first tracks and second tracks-.

10. Implant for the focal electrical stimulation of a nervous structure, produced according to the process defined in claim 1, said implant being of the type comprising on a substrate a network of cavities at the bottom of which are arranged microelectrodes, the cavities being delimited by erected walls, the substrate on a first planar insulating layer comprising in planar fashion:

electrical contacts, first and second electrical tracks and microelectrodes which all belong to the same basic plane superimposed over the first planar insulating layer,

the first electrical tracks connecting the microelectrodes and the electrical contacts, the second electrical tracks being connected to a ground and being separated from the first electrical tracks,

and wherein the substrate comprises;

a second insulating layer covering the electrical contacts, electrical tracks and microelectrodes, the second insulating layer being etched and having openings at the electrical contacts and microelectrodes,

a network of erected metallic walls above the second insulating layer and basic plane, forming the cavities around the microelectrodes.

11. The implant according to claim 10, wherein the network of walls forms a grid.

12. The implant according to claim 10, wherein the walls forming the cavities are perpendicular to the second insulating layer.

13. The implant according to claim 10, wherein it comprises a plurality of electrical elements integrated in the substrate and connected via electrical tracks to a microelectrode.

14. The implant according to claim 10, wherein the walls forming the cavities are in metal or polymer.