Wafer bonding apparatus and wafer bonding system including the same

• US 10,639,875 B2
• Filed: 12/18/2017
• Issued: 05/05/2020
• Est. Priority Date: 06/21/2017
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Tae-yeong, Kang, Pil-kyu, Kim, Seok-ho, Moon, Kwang-jin, Lee, Na-ein, Lee, Ho-jin
• Primary Examiner(s): Aftergut, Jeffry H
• Application Number:
  US15/845,458
• Publication Number:
  US 20180370210A1
• Time in Patent Office: 869 Days
• Field of Search: None
• CPC Class Codes: B32B 2457/14 Semiconductor wafers
• CPC Class Codes: B32B 37/10 characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
• CPC Class Codes: B32B 38/1808 characterised by the laying up of the layers
• CPC Class Codes: B32B 38/1858 using vacuum
• CPC Class Codes: H01L 21/67092 Apparatus for mechanical treatment or grinding or cutting, see the relevant groups in subclasses B24B or B28D
• CPC Class Codes: H01L 21/67253 Process monitoring, e.g. flow or thickness monitoring
• CPC Class Codes: H01L 21/681 using optical controlling means
• CPC Class Codes: H01L 21/6838 with gripping and holding devices using a vacuum; Bernoulli devices
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 2224/08145 the bodies being stacked
• CPC Class Codes: H01L 2224/75724 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/75725 in the upper part of the bonding apparatus, e.g. in the bonding head
• CPC Class Codes: H01L 2224/75744 in the lower part of the bonding apparatus, e.g. in the apparatus chuck
• CPC Class Codes: H01L 2224/7592 Load or pressure adjusting means, e.g. sensors
• CPC Class Codes: H01L 2224/75982 Shape
• CPC Class Codes: H01L 2224/80 Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 2224/80908 involving monitoring, e.g. feedback loop
• CPC Class Codes: H01L 2224/94 at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 24/08 of an individual bonding area
• CPC Class Codes: H01L 24/75 Apparatus for connecting with bump connectors or layer connectors
• CPC Class Codes: H01L 24/80 : Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices

Abstract

Provided are a wafer bonding apparatus for accurately detecting a bonding state of wafers in a wafer bonding process and/or in a wafer bonding system including the wafer bonding apparatus. The wafer bonding apparatus includes a first supporting plate including a first surface and vacuum grooves for vacuum-absorption of a first wafer disposed on the first surface, a second supporting plate including a second surface facing the first surface. A second wafer is on the second surface. The wafer bonding apparatus and/or the wafer bonding system include a bonding initiator at a center portion of the first supporting plate, and an area sensor on the first supporting plate and configured to detect a propagation state of bonding between the first wafer and the second wafer.

Claims

1. A wafer bonding apparatus comprising:

a first supporting plate comprising a first surface and a plurality of vacuum grooves for vacuum-absorption of a first wafer on the first surface;

a second supporting plate comprising a second surface facing the first surface, wherein a second wafer is on the second surface;

a bonding initiator on the first supporting plate, wherein the bonding initiator is configured to initiate bonding between the first wafer to the second wafer; and

an area sensor on the first supporting plate, wherein the area sensor is configured to detect a propagation state of bonding between the first wafer and the second wafer,

wherein in a direction extending radially from the bonding initiator, the area sensor is closer in distance to the bonding initiator than respective distances of each of the plurality of vacuum grooves.

2. The wafer bonding apparatus of claim 1, wherein the area sensor is further configured to detect a propagation state of the bonding between the first wafer and the second wafer by detecting, based on set time points or locations of the first wafer, at least one of a pressure change, an electrical change, or a change of a distance from the first surface to the first wafer.

3. The wafer bonding apparatus of claim 1, wherein the bonding initiator is further configured to initiate the bonding between the first wafer and the second wafer by pressing a center portion of the first wafer towards the second wafer, and

wherein the area sensor is further configured to detect a state of the bonding between the first wafer and the second wafer propagating from a center portion of the first wafer to an outer portion of the first wafer.

4. The wafer bonding apparatus of claim 1, wherein the area sensor is on a first portion of the first supporting plate that is different from a second portion of the first supporting plate corresponding to the plurality of vacuum grooves,

wherein the area sensor is a touch sensor to which one of a resistive mechanism, a capacitive mechanism, an infrared ray (IR) mechanism, or a surface acoustic wave (SAW) mechanism is applied, and

wherein the area sensor is further configured to detect a state in which the first wafer is separated from the first surface.

5. The wafer bonding apparatus of claim 1, wherein the plurality of vacuum grooves have annular shapes formed on the first supporting plate,

wherein the first wafer is fixed onto the first surface via vacuum-absorption of the at least two vacuum grooves, and,

wherein after the bonding between the first wafer and the second wafer is initiated by pressing of the bonding initiator onto the first wafer, vacuum absorption is sequentially stopped from a vacuum groove close to the center portion of the first supporting plate to a vacuum groove at an outer portion of the first supporting plate, or vacuum absorption is sequentially stopped toward a vacuum groove at the outer portion of the first supporting plate, after vacuum absorption at a vacuum groove close to the center portion of the first supporting plate is stopped and the bonding between the first wafer and the second wafer is initiated by the pressing of the bonding initiator onto the first wafer.

6. The wafer bonding apparatus of claim 1, wherein at least one circular determining area around a center portion of the first wafer is defined, and

wherein the area sensor is further configured to detect at least one change comprising a pressure change, an electrical change, and/or a distance change in the at least one determining area,

wherein the area sensor is further configured to determine a propagation state of the bonding between the first wafer and the second wafer based on the at least one change.

7. The wafer bonding apparatus of claim 6, wherein, when the area sensor is further configured to detect the at least one change in the at least one determining area at a set time point, the bonding between the first wafer and the second wafer is determined to be normal, and,

wherein, in at least one of a first case comprising the area sensor not detecting the at least one of the changes in the at least one determining area at the set time point, a second case comprising the area sensor detecting the at least one change in the at least one determining area before the set time point, or a third case comprising the area sensor asymmetrically detecting the at least one of the changes in the at least one determining area, the bonding between the first wafer and the second wafer is determined to be abnormal.

8. The wafer bonding apparatus of claim 6, wherein the at least one determining area comprises an annular shape having a width,

wherein a first determining area close to the center portion of the first wafer and a second determining area close to an outer portion of the first wafer are defined, and

wherein the area sensor is further configured to detect whether the first wafer is separated from the first surface at the first determining area at a first time point and/or to detect whether the first wafer is separated from the first surface at the second determining area at a second time point.

9. A wafer bonding apparatus comprising:

a first supporting plate comprising a first surface and a plurality of vacuum grooves for vacuum-absorption of a first wafer on the first surface;

a second supporting plate comprising a second surface facing the first surface, wherein a second wafer is on the second surface;

a sensor on the first supporting plate that is configured to detect a state of bonding between the first wafer and the second wafer by two-dimensionally detecting whether the first wafer is separated from the first surface; and

a bonding initiator at a center portion of the first supporting plate,

wherein during the bonding between the first wafer and the second wafer, vacuum absorption is sequentially stopped from a vacuum groove close to the center portion of the first supporting plate to a vacuum groove at an outer portion of the first supporting plate, and

wherein the bonding initiator presses the center portion of the first supporting plate after the vacuum absorption is stopped.

10. The wafer bonding apparatus of claim 9, wherein the sensor comprises a touch sensor to which one of a resistive mechanism, a capacitive mechanism, an infrared ray (IR) mechanism, and/or a surface acoustic wave (SAW) mechanism is applied, and

wherein the sensor is further configured to detect whether the first wafer is separated from the first surface by detecting, according to set time points or locations of the first wafer, at least one change comprising a pressure change, an electrical change, or a change of a distance from the first surface to the first wafer.

11. The wafer bonding apparatus of claim 9,

wherein the bonding initiator is configured to press the center portion of the first supporting plate downward to initiate bonding between the first wafer and the second wafer.

12. The wafer bonding apparatus of claim 11, wherein, when the bonding between the first wafer and the second wafer is initiated by the bonding initiator, as the bonding between the first wafer and the second wafer propagates from a center portion of the first wafer to an outer portion of the first wafer, separation of the first wafer from the first surface propagates from the center portion of the first wafer to the outer portion of the first wafer, and

wherein the sensor is further configured to detect separation of the first wafer from the first surface.

13. The wafer bonding apparatus of claim 11, wherein at least two vacuum grooves having annular shapes are formed on the first supporting plate,

wherein the sensor is on a first portion of the first supporting plate that is different from a second portion of the first supporting plate corresponding to the at least two vacuum grooves.

14. The wafer bonding apparatus of claim 9, wherein at least one circular determining area around a center portion of the first wafer is defined, and

wherein the sensor detects a propagation state of the bonding between the first wafer and the second wafer by detecting whether the at least one determining area is separated from the first surface.

15. A wafer bonding system comprising:

a chamber;

a first supporting plate, in an upper portion of an interior of the chamber, the first supporting plate comprising a first surface and a plurality of vacuum grooves configured to vacuum-absorb a first wafer located on the first surface;

a second supporting plate in a lower portion of the interior of the chamber, the second supporting plate comprising a second surface facing the first surface, wherein a second wafer is on the second surface;

a vertical moving apparatus configured to move the first supporting plate up or down;

a bonding initiator on the first supporting plate that is configured to press the center portion of the first wafer toward the second wafer to initiate bonding between the first wafer and the second wafer;

a vacuum pump configured to supply a vacuum to the plurality of vacuum grooves of the first supporting plate;

a controller configured to control the vertical moving apparatus, the bonding initiator, and/or the vacuum pump; and

an area sensor on the first supporting plate that is configured to detect a propagation state of the bonding between the first wafer and the second wafer,

wherein in a direction extending radially from the bonding initiator, the area sensor is closer in distance to the bonding initiator than respective distances of each of the plurality of vacuum grooves.

16. The wafer bonding system of claim 15, wherein the area sensor is a touch sensor to which one of a resistive mechanism, a capacitive mechanism, an infrared ray (IR) mechanism, and a surface acoustic wave (SAW) mechanism is applied, and

wherein the area sensor is further configured to detect a propagation state of the bonding between the first wafer and the second wafer by detecting at least one of changes comprising a pressure change, an electrical change, and a change of a distance from the first surface to the first wafer, based on whether the first wafer is separated from the first surface.

17. The wafer bonding system of claim 15, wherein the plurality of vacuum grooves comprises at least two vacuum grooves having annular shapes that are formed on the first supporting plate,

wherein the area sensor is on a first portion of the first supporting plate that is different from a second portion of the first supporting plate corresponding to the at least two vacuum grooves,

wherein during the bonding between the first wafer and the second wafer, the controller is further configured to control the vacuum pump such that vacuum absorption is sequentially stopped from a vacuum groove close to the center portion of the first supporting plate to a vacuum groove at an outer portion of the first supporting plate, and

wherein the controller is further configured to control the bonding initiator to perform the pressing before the stopping of the vacuum absorption is initiated or after the vacuum absorption is stopped.

18. The wafer bonding system of claim 15, further comprising:

a determiner configured to determine whether the propagation of the bonding between the first wafer and the second wafer is normal,

wherein at least one circular determining area around the center portion of the first wafer is defined,

wherein the area sensor is further configured to detect at least one change comprising a pressure change, an electrical change, or a distance change in the at least one determining area, and

wherein the determiner is further configured to analyze a result of the detection by the area sensor to determine whether a propagation state of the bonding between the first wafer and the second wafer is normal.

19. The wafer bonding system of claim 18, wherein, when the area sensor detects the at least one of the changes in the at least one determining area at a set time point, the determiner is further configured to determine that the bonding between the first wafer and the second wafer is determined to be normal, and,

in at least one of a first case comprising the area sensor not detecting the at least one change in the at least one determining area at the set time point, a second case comprising the area sensor detecting the at least one change in the at least one determining area before the set time point, or a third case comprising the area sensor asymmetrically detecting the at least one change in the at least one determining area, the determiner is configured to determine that the bonding between the first wafer and the second wafer is abnormal.

20. The wafer bonding system of claim 18, wherein, when the determiner is further configured to determine that the propagation of the bonding between the first wafer and the second wafer is abnormal, the controller removes the first wafer and/or the second wafer or stops a wafer bonding process.