Semiconductor sensor and method of manufacturing the same
First Claim
1. A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, and the gas-sensing device comprising:
- a substrate having a sensing area and an interconnection area in the vicinity of the sensing area;
an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area;
a sensing electrode formed on the IMD layer in the sensing area; and
an interconnect structure formed in the interconnection area, and the interconnect structure comprising;
a tungsten layer buried in the IMD layer and part of a top surface of the tungsten layer being exposed by at least a via;
a platinum layer formed in said at least the via, anda TiO2 layer formed on the IMD layer adjacent to said at least the via, and the platinum layer is also directly formed on the TiO2 layer above the IMD layer, wherein the platinum (Pt) layer directly contacts said part of the top surface of the tungsten layer,wherein the sensing electrode comprises;
a patterned TiO2 layer formed above the IMD layer; and
a patterned platinum (Pt) layer formed above the patterned TiO2 layer.
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Abstract
A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and an interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer.
15 Citations
13 Claims
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1. A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, and the gas-sensing device comprising:
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a substrate having a sensing area and an interconnection area in the vicinity of the sensing area; an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area; a sensing electrode formed on the IMD layer in the sensing area; and an interconnect structure formed in the interconnection area, and the interconnect structure comprising; a tungsten layer buried in the IMD layer and part of a top surface of the tungsten layer being exposed by at least a via; a platinum layer formed in said at least the via, and a TiO2 layer formed on the IMD layer adjacent to said at least the via, and the platinum layer is also directly formed on the TiO2 layer above the IMD layer, wherein the platinum (Pt) layer directly contacts said part of the top surface of the tungsten layer, wherein the sensing electrode comprises; a patterned TiO2 layer formed above the IMD layer; and a patterned platinum (Pt) layer formed above the patterned TiO2 layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13)
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Specification