Etching compositions and method of etching by using the same

• US 10,640,706 B2
• Filed: 07/03/2018
• Issued: 05/05/2020
• Est. Priority Date: 07/06/2017
• Status: Active Grant

• Current Assignee: OCI Company Limited (OCI Holdings Co. Ltd.)
• Original Assignee: OCI Company Limited (OCI Holdings Co. Ltd.)
• Inventors: Yoo, HoSeong, Lee, JunEun, Jang, PyongHwa, Kim, Yongil, Park, Jin
• Primary Examiner(s): Olsen, Allan W.
• Application Number:
  US16/026,169
• Publication Number:
  US 20190010398A1
• Time in Patent Office: 672 Days
• Field of Search: None
• CPC Class Codes: C09K 13/06 with organic material
• CPC Class Codes: H01L 21/31111 by chemical means

Abstract

The present invention relates to an etching composition, an etching method, and a method of preparing a semiconductor device using the same, and more particularly, to an etching composition comprising a compound capable of selectively removing a nitride film with a high selectivity while minimizing an etch rate of the oxide film, and a method of preparing a semiconductor device comprising an etching process using the etching composition.

Claims

1. An etching composition comprising:

phosphoric acid; and

a compound represented by Formula 1,

2. The etching composition of claim 1, wherein R₁ to R₃ are selected from the group consisting of hydrogen, halogen, hydroxy group and C₁-C₁₀ alkyl group, at least one of R₁ to R₃ is hydroxy group,

R₄ is selected from the group consisting of hydrogen, halogen and C₁-C₅ alkyl group,

X₁ is —

(C(R₅)(R₆))_m—

,

m is 1, and

R₅ and R₆ are each independently hydrogen or C₁-C₅ alkyl group.

3. The etching composition of claim 2, wherein all of R₁ to R₃ are hydroxy groups.

4. The etching composition of claim 3, wherein the compound represented by Formula 1 is at least one selected from the group consisting of (2-(pyridin-4-yl)propan-2-yl)silanetriol, (3-pyridin-4-yl)pentan-3-yl)silanetriol, and (2-(3,5-dimethylpyridin-4-yl)propan-2-yl)silanetriol.

5. The etching composition of claim 1, which comprises 80 to 90% by weight of phosphoric acid and 0.1 to 3% by weight of the compound represented by Formula 1.

6. The etching composition of claim 1, further comprising an additive for improving etch rate.

7. A method of etching a semiconductor device, comprising etching a film selected from the group consisting of a silicon nitride film, a silicon oxide film and combinations thereof, by using the etching composition of claim 1.