Alignment testing for tiered semiconductor structure
First Claim
1. A method for evaluating a tiered semiconductor structure, comprising:
- evaluating connectivity between a first set of vias within a first layer of a tiered semiconductor structure and spaced apart by a first pitch and a second set of vias within a second layer of the tiered semiconductor structure and spaced apart by a second pitch different than the first pitch;
determining a first offset based upon an offset measurement between a target design via and a measured center via, the first offset comprising;
an offset distance determined based upon a number of vias between the target design via and the measured center via and a pitch difference between the first pitch and the second pitch; and
evaluating the tiered semiconductor structure for misalignment based upon the first offset.
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Abstract
Among other things, one or more techniques or systems for evaluating a tiered semiconductor structure, such as a stacked CMOS structure, for misalignment are provided. In an embodiment, a connectivity test is performed on vias between a first layer and a second layer to determine a via diameter and a via offset that are used to evaluate misalignment. In an embodiment, a connectivity test for vias within a first layer is performed to determine an alignment rotation based upon which vias are connected through a conductive arc within a second layer or which vias are connected to a conductive pattern out of a set of conductive patterns. In this way, the via diameter, the via offset, or the alignment rotation are used to evaluate the tiered semiconductor structure, such as during a stacked CMOS process, for misalignment.
32 Citations
20 Claims
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1. A method for evaluating a tiered semiconductor structure, comprising:
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evaluating connectivity between a first set of vias within a first layer of a tiered semiconductor structure and spaced apart by a first pitch and a second set of vias within a second layer of the tiered semiconductor structure and spaced apart by a second pitch different than the first pitch; determining a first offset based upon an offset measurement between a target design via and a measured center via, the first offset comprising; an offset distance determined based upon a number of vias between the target design via and the measured center via and a pitch difference between the first pitch and the second pitch; and evaluating the tiered semiconductor structure for misalignment based upon the first offset. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for evaluating a tiered semiconductor structure, comprising:
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evaluating connectivity between a first set of vias within a first layer of a tiered semiconductor structure and spaced apart by a first pitch and a second set of vias within a second layer of the tiered semiconductor structure and spaced apart by a second pitch different than the first pitch; identifying a measured center via based upon the evaluating; determining an offset based upon a number of vias between a target design via and the measured center via; and evaluating the tiered semiconductor structure for misalignment based upon the offset. - View Dependent Claims (14, 15, 16, 17)
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18. A method for evaluating a tiered semiconductor structure, comprising:
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evaluating connectivity between a first set of vias within a first layer of a tiered semiconductor structure and spaced apart by a first pitch and a second set of vias within a second layer of the tiered semiconductor structure and spaced apart by a second pitch different than the first pitch to determine a via connection count corresponding to a number of vias within the first set of vias that contact vias within the second set of vias; identifying a measured center via based upon the via connection count; determining an offset based upon a number of vias between a target design via and the measured center via and based upon a pitch difference between the first pitch and the second pitch; and evaluating the tiered semiconductor structure for misalignment based upon a via diameter for vias of the first set of vias and the offset. - View Dependent Claims (19, 20)
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Specification