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Methods of forming photonic devices

  • US 10,641,958 B2
  • Filed: 04/08/2019
  • Issued: 05/05/2020
  • Est. Priority Date: 03/26/2018
  • Status: Active Grant
First Claim
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1. A method, comprising:

  • forming a first etch stop layer over a substrate;

    forming a first mask layer over the first etch stop layer;

    forming a second etch stop layer over the first mask layer;

    forming a second mask layer over the second etch stop layer;

    forming two or more first recessed regions that each extends through the second mask layer;

    forming a second recessed region, directly below a first one of the two or more first recessed regions, that further extends through the second etch stop layer and the first mask layer; and

    concurrently forming first and second trenches with respective different depths in the substrate according to a second one of the two or more first recessed regions and the second recessed region.

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