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Reflective mask blank, reflective mask and method of manufacturing semiconductor device

  • US 10,642,149 B2
  • Filed: 07/05/2019
  • Issued: 05/05/2020
  • Est. Priority Date: 12/24/2014
  • Status: Active Grant
First Claim
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1. A reflective mask blank comprising:

  • a substrate;

    a multilayer reflective film on the substrate; and

    a phase shift film that shifts a phase of extreme ultra violet (EUV) light on the multilayer reflective film;

    wherein,root mean square roughness (Rms), obtained by measuring a 1 μ



    1 μ

    m region on a surface of the phase shift film with an atomic force microscope, is not more than 0.50 nm, and an integrated value of power spectrum density at a spatial frequency of 10 to 100 μ

    m

    is not more than 360 nm3.

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