Organometallic solution based high resolution patterning compositions and corresponding methods
DCFirst Claim
1. A coating solution consisting essentially of volatile organic solvent and an organometallic composition comprising a first organometallic compound represented by the formula RSnO(3/2−
- x/2)(OH)x where (0<
x<
3) with from about 0.0025M to about 1.0M tin in the solution, where R is an alkyl group bonded to the tin at a secondary or tertiary carbon atom.
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Abstract
Organometallic radiation resist compositions are described based on tin ions with alkyl ligands. Some of the compositions have branched alkyl ligands to provide for improved patterning contrast while maintaining a high degree of solution stability. Blends of compounds with distinct alkyl ligands can provide further improvement in the patterning. High resolution patterning with a half-pitch of no more than 25 nm can be achieved with a line width roughness of no more than about 4.5 nm. Synthesis techniques have been developed that allow for the formation of alkyl tin oxide hydroxide compositions with very low metal contamination.
86 Citations
21 Claims
-
1. A coating solution consisting essentially of volatile organic solvent and an organometallic composition comprising a first organometallic compound represented by the formula RSnO(3/2−
- x/2)(OH)x where (0<
x<
3) with from about 0.0025M to about 1.0M tin in the solution, where R is an alkyl group bonded to the tin at a secondary or tertiary carbon atom. - View Dependent Claims (2, 3, 4)
- x/2)(OH)x where (0<
-
5. A coating solution consisting essentially of an organic solvent and an organometallic composition comprising a first organometallic compound represented by the formula RSnO(3/2−
- x/2)(OH)x where (0<
x<
3), where R is an alkyl group, where the alkyl group is bonded to the tin at a secondary or tertiary carbon atom, and a second organometallic compound distinct from the first organometallic compound and represented by the formula R′
SnO(3/2−
x/2)(OH)x where (0<
x<
3), where R′
is a linear or branched alkyl group and wherein R and R′
are not the same. - View Dependent Claims (6, 7, 8, 9, 10)
- x/2)(OH)x where (0<
-
11. A method for patterning a film on a substrate, the method comprising:
-
exposing the film with patterned EUV doses of no more than about 80 mJ/cm2 wherein the film has an average thickness from about 2 nm to about 50 nm and wherein the film comprises a first organometallic compound represented by the formula RSnO(3/2−
x/2)(OH)x where (0<
x<
3), where R is an alkyl group bonded to the tin; anddeveloping the film to form features at half-pitch no more than about 25 nm and linewidth roughness no more than about 5 nm. - View Dependent Claims (12, 13, 14, 15, 16)
-
-
17. A method for patterning an organometallic film on a substrate, the method comprising:
exposing the organometallic film to patterned EUV radiation at a dose-to-gel value of no more than about 15 mJ/cm2 to obtain a contrast of at least about 6.
-
18. A patterned structure comprising a substrate having a surface and a coating associated with the surface wherein at least portions of the coating are represented by the formulation (R)zSnO2−
- z/2−
x/2(OH)x (z>
0, x>
0, and 0 <
(x+z)<
4), where R is an alkyl group bonded to the tin at a secondary or tertiary carbon atom, wherein the coating has an average thickness of no more than about 50 nm. - View Dependent Claims (19, 20, 21)
- z/2−
Specification