Method for designating specific world-lines of data storage device as reserved word-lines, and selecting a writing mode accordingly
First Claim
1. A method for controlling operations of a data storage device, the data storage device comprising a non-volatile (NV) memory comprising a plurality of NV memory elements, the method comprising:
- selecting a block from multiple blocks of a NV memory element of the plurality of NV memory elements, the block comprising a plurality of word-lines;
designating a first word-line and a last word-line of the selected block as reserved word-lines, and designating the remaining word-lines of the selected block as non-reserved word-lines;
receiving a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device;
generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein data writing is performed through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages;
modifying physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and
writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.
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Abstract
A method for controlling operations of a data storage device, the associated data storage device and the controller thereof are provided. The method can comprise: selecting a block of multiple blocks of a non-volatile (NV) memory element of a plurality of NV memory elements; receiving a data-writing command from a host device; generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the block comprises the plurality of non-reserved word-lines and a plurality of reserved word-lines, and each non-reserved word-line of the plurality of non-reserved word-lines comprises multiple pages; and writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page.
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Citations
10 Claims
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1. A method for controlling operations of a data storage device, the data storage device comprising a non-volatile (NV) memory comprising a plurality of NV memory elements, the method comprising:
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selecting a block from multiple blocks of a NV memory element of the plurality of NV memory elements, the block comprising a plurality of word-lines; designating a first word-line and a last word-line of the selected block as reserved word-lines, and designating the remaining word-lines of the selected block as non-reserved word-lines; receiving a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device; generating a plurality of operating commands corresponding to the data-writing command, and sending the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein data writing is performed through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; modifying physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and writing user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page. - View Dependent Claims (2, 3, 4, 5)
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6. A data storage device, comprising:
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a non-volatile (NV) memory, for storing information, wherein the NV memory comprises a plurality of NV memory elements; and a controller, coupled to the NV memory, for controlling operations of the data storage device, wherein the controller comprises; a processing circuit, for controlling the controller according to a plurality of host device commands from a host device to allow the host device to access the NV memory through the controller, wherein; the controller selects a block from a plurality of blocks of a NV memory element of the plurality of NV memory elements, the block comprising a plurality of word-lines; the controller designates a first word-line and a last word-line of the selected block as reserved word-lines, and designates the remaining word-lines of the selected block as non-reserved word-lines; the controller receives a data-writing command from a host device, wherein the data-writing command is one of the plurality of host device commands from the host device; the controller generates a plurality of operating commands corresponding to the data-writing command, and sends the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the controller performs the data-writing through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; the controller modifies physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and the controller writes user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page. - View Dependent Claims (7)
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8. A controller of a data storage device, the data storage device comprising the controller and a non-volatile (NV) memory comprising a plurality of NV memory elements, the controller comprises:
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a processing circuit, for controlling the controller according to a plurality of host device commands from a host device to allow the host device to access the NV memory through the controller, wherein; the controller selects a block from a plurality of blocks of a NV memory element of the plurality of NV memory elements; the controller designates a first word-line and a last word-line of the selected block as reserved word-lines, and designates the remaining word-lines of the selected block as non-reserved word-lines; the controller receives a data-writing command from a host device, wherein the data-writing command is one of a plurality of host device commands from the host device; the controller generates a plurality of operating commands corresponding to the data-writing command, and sends the plurality of operating commands to the NV memory to perform data-writing on a plurality of non-reserved word-lines of the block, wherein the controller performs the data-writing through a triple level cell (TLC) writing mode to make each non-reserved word-line of the plurality of non-reserved word-lines comprise multiple pages; the controller modifies physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line; and the controller writes user data into a reserved word-line of the plurality of reserved word-lines through a single level cell (SLC) writing mode, to make the reserved word-line comprise a single page. - View Dependent Claims (9)
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10. A method of data writing, which is applicable to a data storage device, the method comprising:
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selecting a block as an active block, the block being selected from a plurality of blocks comprised in the data storage device; dividing a plurality of word-lines of the active block into at least one reserved word-line and a plurality of non-reserved word-lines, the at least one reserved word-line comprising at least one of a first word-line and a last word-line of the active block; programming a first type of data to the non-reserved word-lines in a preset writing mode; programming a second type of data to the at least one reserved word-line in a non-preset writing mode, wherein the preset writing mode is programmable with more data to each word-line of the word-lines than the non-preset writing mode; and modifying physical addresses respectively pointing to at least one portion of word-lines of the block to write a series of data to the plurality of non-reserved word-lines and avoid writing the series of data to the first word-line of the block, wherein the plurality of reserved word-lines comprise the first word-line.
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Specification