Operating method of resistive memory storage apparatus
First Claim
Patent Images
1. An operating method of a resistive memory storage apparatus, comprising:
- applying a forming voltage to a memory cell and obtaining a first cell current of the memory cell; and
determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to a magnitude relationship between the first cell current and a first reference current, wherein the memory cell to which the forming voltage is applied operates in a heavy forming mode and serves as a one-time programmable memory device.
1 Assignment
0 Petitions
Accused Products
Abstract
An operating method of a resistive memory storage apparatus includes: applying a forming voltage to a memory cell and obtaining a cell current of the memory cell; and determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to a magnitude relationship between the cell current and a reference current. The memory cell to which the forming voltage is applied operates in a heavy forming mode and serves as a one-time programmable memory device.
-
Citations
10 Claims
-
1. An operating method of a resistive memory storage apparatus, comprising:
-
applying a forming voltage to a memory cell and obtaining a first cell current of the memory cell; and determining whether to adjust the forming voltage and apply the adjusted forming voltage to the memory cell according to a magnitude relationship between the first cell current and a first reference current, wherein the memory cell to which the forming voltage is applied operates in a heavy forming mode and serves as a one-time programmable memory device. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
-
Specification