Dielectric material, multi-layered capacitors and electronic devices comprising the same

• US 10,643,791 B2
• Filed: 07/12/2018
• Issued: 05/05/2020
• Est. Priority Date: 03/28/2018
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Kim, Hyun Sik, Son, Yoon Chul, Moon, Kyoung-Seok, Yang, Daejin, Kwak, Chan
• Primary Examiner(s): Group, Karl E
• Application Number:
  US16/033,392
• Publication Number:
  US 20190304685A1
• Time in Patent Office: 663 Days
• CPC Class Codes: B32B 18/00 Layered products essentially comprising ceramics, e.g. refractory products
• CPC Class Codes: C01G 23/006 Alkaline earth titanates
• CPC Class Codes: C01P 2002/34 perovskite-type (ABO3)
• CPC Class Codes: C01P 2002/52 containing elements as dopants
• CPC Class Codes: C01P 2002/72 by d-values or two theta-values, e.g. as X-ray diagram
• CPC Class Codes: C01P 2002/88 by thermal analysis data, e.g. TGA, DTA, DSC
• CPC Class Codes: C01P 2004/03 obtained by SEM
• CPC Class Codes: C01P 2004/62 Submicrometer sized, i.e. from 0.1-1 micrometer
• CPC Class Codes: C04B 2235/3206 Magnesium oxides or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3224 Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
• CPC Class Codes: C04B 2235/3225 Yttrium oxide or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3227 Lanthanum oxide or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3236 Alkaline earth titanates
• CPC Class Codes: C04B 2235/3241 Chromium oxides, chromates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3262 Manganese oxides, manganates, rhenium oxides or oxide-forming salts thereof, e.g. MnO
• CPC Class Codes: C04B 2235/3275 Cobalt oxides, cobaltates or cobaltites or oxide forming salts thereof, e.g. bismuth cobaltate, zinc cobaltite
• CPC Class Codes: C04B 2235/3279 Nickel oxides, nickalates, or oxide-forming salts thereof
• CPC Class Codes: C04B 2235/3418 Silicon oxide, silicic acids, or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint glass constituents C04B2235/36
• CPC Class Codes: C04B 2235/5454 nanometer sized, i.e. below 100 nm
• CPC Class Codes: C04B 2235/604 Pressing at temperatures other than sintering temperatures
• CPC Class Codes: C04B 2235/606 : Drying
• CPC Class Codes: C04B 2235/652 : Reduction treatment C04B2235/664 takes precedence
• CPC Class Codes: C04B 2235/6567 : Treatment time
• CPC Class Codes: C04B 2235/6582 : Hydrogen containing atmosphere
• CPC Class Codes: C04B 2235/663 : Oxidative annealing
• CPC Class Codes: C04B 2235/762 : Cubic symmetry, e.g. beta-SiC
• CPC Class Codes: C04B 2235/768 : Perovskite structure ABO3
• CPC Class Codes: C04B 2235/785 : Submicron sized grains, i.e. from 0,1 to 1 micron
• CPC Class Codes: C04B 2235/79 : Non-stoichiometric products, e.g. perovskites (ABO3) with an A/B-ratio other than 1
• CPC Class Codes: C04B 2235/80 : Phases present in the sintered or melt-cast ceramic products other than the main phase
• CPC Class Codes: C04B 2235/81 : Materials characterised by the absence of phases other than the main phase, i.e. single phase materials
• CPC Class Codes: C04B 2235/85 : Intergranular or grain boundary phases
• CPC Class Codes: C04B 2237/346 : Titania or titanates
• CPC Class Codes: C04B 2237/704 : of one or more of the ceramic layers or articles
• CPC Class Codes: C04B 35/47 : based on strontium titanates
• CPC Class Codes: C04B 35/6261 : Milling
• CPC Class Codes: C04B 35/6264 : Mixing media, e.g. organic solvents
• CPC Class Codes: C04B 35/62655 : Drying, e.g. freeze-drying, spray-drying, microwave or supercritical drying
• CPC Class Codes: C04B 35/62695 : Granulation or pelletising devices for shaping artificial aggregates from ceramic mixtures B28B1/004
• CPC Class Codes: C04B 35/6303 : Inorganic additives
• CPC Class Codes: C04B 35/64 : Burning or sintering processes C04B33/32 takes precedence ; powder metallurgy B22F
• CPC Class Codes: H01G 4/1227 : based on alkaline earth titanates
• CPC Class Codes: H01G 4/1236 : based on zirconium oxides or zirconates H01G4/1263 takes precedence
• CPC Class Codes: H01G 4/232 : electrically connecting two or more layers of a stacked or rolled capacitor
• CPC Class Codes: H01G 4/248 : the terminals embracing or surrounding the capacitive element, e.g. caps H01G4/252 takes precedence
• CPC Class Codes: H01G 4/30 : Stacked capacitors H01G4/33 takes precedence

Abstract

Disclosed are a dielectric material, a multi-layered capacitor, and an electronic device including the same. The dielectric material includes a dielectric material particle represented by ADO₃, wherein A includes Sr, Ba, Ca, Pb, K, Na, or a combination thereof, D includes Ti, Zr, Mg, Nb, Ta, or a combination thereof, the dielectric material particle includes about 2.5 moles to about 4 moles of the donor element, based on 100 moles of D, and a diameter of the dielectric material particle is in a range of from about 100 nanometers to about 300 nanometers.

Claims

1. A dielectric material comprising

a dielectric material particle represented by ADO₃,

wherein A comprises Sr, Ba, Ca, Pb, K, Na, or a combination thereof,

D comprises Ti, Zr, Mg, Nb, Ta, or a combination thereof,

the dielectric material particle comprises about 2.5 moles to about 4 moles of a donor element, based on 100 moles of D, and

a diameter of the dielectric material particle is in a range of from about 100 nanometers to about 300 nanometers.

2. The dielectric material of claim 1, wherein the donor element comprises a rare earth element.

3. The dielectric material of claim 2, wherein the rare earth element comprises La, Y, Dy, Sm, Nb, Ho, or a combination thereof.

4. The dielectric material of claim 1, wherein

the dielectric material particle comprises a grain and a grain boundary, and

the grain boundary further comprises an acceptor element, wherein the acceptor element comprises Mn, Co, Ni, Cr, Mg, or a combination thereof.

5. The dielectric material of claim 4, wherein the acceptor element is included in an amount of greater than 0 moles and less than or equal to about 1 mole, based on 100 moles of D.

6. The dielectric material of claim 1, wherein the dielectric material particle comprises a perovskite single phase.

7. The dielectric material of claim 1, wherein the dielectric material further comprises a silicon compound having a different crystal structure from the dielectric material particle.

8. The dielectric material of claim 7, wherein the silicon compound is included in an amount of greater than 0 mole and less than or equal to about 1 moles, based on 100 moles of D.

9. The dielectric material of claim 7, wherein

the dielectric material particle comprises a grain and a grain boundary, and

the silicon compound contacts the grain boundary.

10. The dielectric material of claim 1, wherein the dielectric material has specific gravity of greater than or equal to about 0.95.

11. The dielectric material of claim 1, wherein an oxygen defect ratio of the dielectric material relative to a total mass of the dielectric material is less than or equal to about 0.01%.

12. A multi-layered capacitor comprising

a laminated structure comprising an internal electrode and a dielectric layer,

wherein the dielectric layer comprises the dielectric material of claim 1.

13. The multi-layered capacitor of claim 12, comprising at least two of the internal electrodes and/or at least two of the dielectric layers, wherein each internal electrode and each dielectric layer are alternately arranged.

14. The multi-layered capacitor of claim 12, wherein the dielectric layer has a thickness of about 200 nanometers to about 500 nanometers.

15. An electronic device comprising the dielectric material of claim 1.

16. The electronic device of claim 15, wherein the electronic device is a varistor, a thermistor, or a capacitor for storing energy.