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Semiconductor device and method for manufacturing the same

  • US 10,643,844 B2
  • Filed: 07/18/2019
  • Issued: 05/05/2020
  • Est. Priority Date: 03/30/2017
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • a stack including at least one conductive layer and at least one insulating layer which are alternately stacked;

    contact plugs passing through the stack to different depths;

    etch stop patterns enclosing respective sidewalls of the contact plugs; and

    protective patterns enclosing the respective etch stop patterns,wherein the contact plugs pass through the etch stop patterns and the protective patterns, and are electrically coupled with the at least one conductive layer.

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