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Selective growth of metal-containing hardmask thin films

  • US 10,643,846 B2
  • Filed: 06/28/2018
  • Issued: 05/05/2020
  • Est. Priority Date: 06/28/2018
  • Status: Active Grant
First Claim
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1. A method comprising:

  • providing a patterned semiconductor substrate having features spaced apart on an underlying material to be etched;

    filling spaces between the features with an ashable fill such that top horizontal surfaces of the features are exposed and sidewalls of the features contact the ashable fill;

    after filling the spaces between the features, selectively depositing a metal-containing hard mask on the exposed top horizontal surfaces of the features relative to the ashable fill; and

    removing the ashable fill relative to the features and metal-containing hard mask.

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