Silicon dioxide-polysilicon multi-layered stack etching with plasma etch chamber employing non-corrosive etchants

• US 10,643,854 B2
• Filed: 12/04/2015
• Issued: 05/05/2020
• Est. Priority Date: 01/25/2013
• Status: Active Grant

• Current Assignee: Applied Materials Incorporated
• Original Assignee: Applied Materials Incorporated
• Inventors: Shimizu, Daisuke, Kim, Jong Mun
• Primary Examiner(s): Yu, Yuechuan
• Application Number:
  US14/960,196
• Publication Number:
  US 20160086771A1
• Time in Patent Office: 1,614 Days
• CPC Class Codes: B81C 1/00531 Dry etching
• CPC Class Codes: H01J 37/32082 Radio frequency generated discharge H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence
• CPC Class Codes: H01J 37/32146 Amplitude modulation, includes pulsing
• CPC Class Codes: H01J 37/32165 Plural frequencies
• CPC Class Codes: H01J 37/3244 Gas supply means
• CPC Class Codes: H01L 21/0332 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/3081 characterised by their composition, e.g. multilayer masks, materials
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/31122 of layers not containing Si, e.g. PZT, Al2O3
• CPC Class Codes: H01L 21/31138 by dry-etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: H01L 21/32139 using masks
• CPC Class Codes: H01L 21/67069 for drying etching
• CPC Class Codes: H10B 41/27 the channels comprising vertical portions, e.g. U-shaped channels
• CPC Class Codes: H10B 43/27 the channels comprising vertical portions, e.g. U-shaped channels

Abstract

Multilayered stacks having layers of silicon interleaved with layers of a dielectric, such as silicon dioxide, are plasma etched with non-corrosive process gas chemistries. Etching plasmas of fluorine source gases, such as SF₆ and/or NF₃ typically only suitable for dielectric layers, are energized by pulsed RF to achieve high aspect ratio etching of silicon/silicon dioxide bi-layers stacks without the addition of corrosive gases, such as HBr or Cl₂. In embodiments, a mask open etch and the multi-layered stack etch are performed in a same plasma processing chamber enabling a single chamber, single recipe solution for patterning such multi-layered stacks. In embodiments, 3D NAND memory cells are fabricated with memory plug and/or word line separation etches employing a fluorine-based, pulsed-RF plasma etch.

Claims

1. An etch system, comprising:

a process chamber;

a chuck disposed in the process chamber to support a substrate while being etched;

a plurality of RF generators to energize the process gases into a plasma with a plurality of RF frequencies;

a pulse controller coupled to the plurality of RF generators, the pulse controller to pulse each of the plurality of RF generators over time between an RF on state and an RF off state synchronously to haw all generators in the RF off state concurrently for at least some period of time;

a first gas source plumbed to the process chamber, the first gas source comprising SF₆;

a second gas source plumbed to the process chamber, the second gas source comprising NF₃, wherein the first gas source and the second gas source have a common mass flow controller;

a third gas source plumbed to the process chamber, the third gas source comprising CH₄;

a fourth gas source plumbed to the process chamber, the fourth gas source comprising 02;

a fifth gas source plumbed to the process chamber, the fifth gas source comprising N2, wherein each of the third gas source, the fourth gas source, and the fifth gas source has its own respective mass flow controller;

and a controller coupled to the process chamber, the controller configured to execute a method comprising;

loading the substrate into the process chamber, the substrate having a mask layer disposed over a stack of silicon and dielectric layers;

introducing process gases into the process chamber, wherein the process gases comprise one part SF₆, 2-30 parts CH₄, 0.4-4 parts O₂, 1-30 parts N₂ and 1-20 parts NF₃ at a chamber pressure between 20 and 50 mT;

energizing the process gases into a plasma with RF energy of at least one frequency, wherein the RF energy is pulsed over time between an RF on state and an RF off state; and

etching, with the plasma, portions of the stack not covered by the mask layer, the etching having a selectivity to the mask layer of at least 1;

1.

2. The etch system of claim 1, wherein the pulse controller defines the period of time between 20 and 125 μ

s.

3. The etch system of claim 1, wherein the etch system does not include an HBr gas source or a Cl₂ gas source.

4. The etch system of claim 1, wherein the plurality of RF generators has a corresponding plurality of frequencies.

5. The etch system of claim 4, wherein a first of the plurality of RF generators operates at 2 MHz, a second of the plurality of RF generators operates at 60 MHz, and a third of the plurality of RF generators operates at 162 MHz.

6. The etch system of claim 5, wherein the first and second of the plurality of RF generators deliver a power between 4 and 8 kW, and wherein the third of the plurality of RF generators delivers a power of between 1 and 3 kW.