Hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication
First Claim
Patent Images
1. An integrated circuit, comprising:
- a front end, comprising;
a semiconductor wafer; and
a first plurality of semiconductor devices formed on the semiconductor wafer; and
a back end, comprising;
a dielectric layer;
a plurality of interconnects formed in the dielectric layer for electrically connecting a second plurality of semiconductor devices in the back end; and
a carbon-containing layer positioned directly between the dielectric layer and each interconnect of the plurality of interconnects.
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Abstract
In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.
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Citations
17 Claims
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1. An integrated circuit, comprising:
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a front end, comprising; a semiconductor wafer; and a first plurality of semiconductor devices formed on the semiconductor wafer; and a back end, comprising; a dielectric layer; a plurality of interconnects formed in the dielectric layer for electrically connecting a second plurality of semiconductor devices in the back end; and a carbon-containing layer positioned directly between the dielectric layer and each interconnect of the plurality of interconnects. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17)
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Specification