Methods for making multi-die package with bridge layer

• US 10,643,861 B2
• Filed: 05/01/2017
• Issued: 05/05/2020
• Est. Priority Date: 09/30/2014
• Status: Active Grant

• Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Original Assignee: Taiwan Semiconductor Manufacturing Company Limited
• Inventors: Chang, Wei Sen, Chen, Yu-Feng, Chen, Chen-Shien, Lii, Mirng-Ji
• Primary Examiner(s): Rizkallah, Kimberly N
• Assistant Examiner(s): Nguyen, Dilinh P
• Application Number:
  US15/583,708
• Publication Number:
  US 20170236724A1
• Time in Patent Office: 1,100 Days
• Field of Search: 257666, 257778, 438123, 438108, 438666
• CPC Class Codes: H01L 21/485 Adaptation of interconnections, e.g. engineering charges, repair techniques
• CPC Class Codes: H01L 21/4853 Connection or disconnection of other leads to or from a metallisation, e.g. pins, wires, bumps
• CPC Class Codes: H01L 21/563 Encapsulation of active face of flip-chip device, e.g. underfilling or underencapsulation of flip-chip, encapsulation preform on chip or mounting substrate
• CPC Class Codes: H01L 22/10 Measuring as part of the manufacturing process burn-in G01R31/2855
• CPC Class Codes: H01L 22/14 for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
• CPC Class Codes: H01L 22/20 Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/02331 Multilayer structure
• CPC Class Codes: H01L 2224/0237 Disposition of the redistribution layers
• CPC Class Codes: H01L 2224/02375 Top view
• CPC Class Codes: H01L 2224/0239 Material of the redistribution layers
• CPC Class Codes: H01L 2224/03 Manufacturing methods
• CPC Class Codes: H01L 2224/03464 Electroless plating
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
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• CPC Class Codes: H01L 2224/05611 : Tin [Sn] as principal constituent
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• CPC Class Codes: H01L 2224/13111 : Tin [Sn] as principal constituent
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• CPC Class Codes: H01L 2224/24147 : the HDI interconnect not connecting to the same level of the lower semiconductor or solid-state body at which the upper semiconductor or solid-state body is mounted, e.g. the upper semiconductor or solid-state body being mounted in a cavity or on a protrusion of the lower semiconductor or solid-state body
• CPC Class Codes: H01L 2224/24226 : the HDI interconnect connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the item being planar
• CPC Class Codes: H01L 2224/24227 : the HDI interconnect not connecting to the same level of the item at which the semiconductor or solid-state body is mounted, e.g. the semiconductor or solid-state body being mounted in a cavity or on a protrusion of the item
• CPC Class Codes: H01L 2224/245 : Material
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29191 : The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/293 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/32106 : the layer connector connecting one bonding area to at least two respective bonding areas
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• CPC Class Codes: H01L 2224/33505 : Layer connectors having different materials
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/48091 : Arched
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• CPC Class Codes: H01L 2224/48227 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48464 : the other connecting portion not on the bonding area also being a ball bond, i.e. ball-to-ball
• CPC Class Codes: H01L 2224/73204 : the bump connector being embedded into the layer connector
• CPC Class Codes: H01L 2224/73207 : Bump and wire connectors
• CPC Class Codes: H01L 2224/73209 : Bump and HDI connectors
• CPC Class Codes: H01L 2224/73217 : Layer and HDI connectors
• CPC Class Codes: H01L 2224/73253 : Bump and layer connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73267 : Layer and HDI connectors
• CPC Class Codes: H01L 2224/81 : using a bump connector
• CPC Class Codes: H01L 2224/81191 : wherein the bump connectors are disposed only on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/814 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/81411 : Tin [Sn] as principal constituent
• CPC Class Codes: H01L 2224/81416 : Lead [Pb] as principal constituent
• CPC Class Codes: H01L 2224/81424 : Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/81439 : Silver [Ag] as principal constituent
• CPC Class Codes: H01L 2224/81444 : Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/81447 : Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/81455 : Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/81815 : Reflow soldering
• CPC Class Codes: H01L 2224/82105 : by using a preform
• CPC Class Codes: H01L 2224/82815 : Reflow soldering
• CPC Class Codes: H01L 2224/83 : using a layer connector
• CPC Class Codes: H01L 2224/83101 : as prepeg comprising a layer connector, e.g. provided in an insulating plate member
• CPC Class Codes: H01L 2224/83104 : by applying pressure, e.g. by injection
• CPC Class Codes: H01L 2224/83862 : Heat curing
• CPC Class Codes: H01L 2224/83874 : Ultraviolet [UV] curing
• CPC Class Codes: H01L 2224/8592 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/92 : Specific sequence of method steps
• CPC Class Codes: H01L 2224/9202 : Forming additional connectors after the connecting process
• CPC Class Codes: H01L 2224/92125 : the second connecting process involving a layer connector
• CPC Class Codes: H01L 2224/92133 : the second connecting process involving a bump connector
• CPC Class Codes: H01L 2224/92144 : the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/92147 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/92163 : the second connecting process involving a bump connector
• CPC Class Codes: H01L 2224/92242 : the first connecting process involving a layer connector
• CPC Class Codes: H01L 2224/92244 : the second connecting process involving a build-up interconnect
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 2224/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2225/0651 : Wire or wire-like electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06513 : Bump or bump-like direct electrical connections between devices, e.g. flip-chip connection, solder bumps
• CPC Class Codes: H01L 2225/06517 : Bump or bump-like direct electrical connections from device to substrate
• CPC Class Codes: H01L 2225/06562 : at least one device in the stack being rotated or offset
• CPC Class Codes: H01L 23/3185 : the coating covering also the sidewalls of the semiconductor body
• CPC Class Codes: H01L 23/49811 : Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads H01L23/49827 takes precedence
• CPC Class Codes: H01L 23/49838 : Geometry or layout
• CPC Class Codes: H01L 23/5381 : Crossover interconnections, e.g. bridge stepovers
• CPC Class Codes: H01L 23/5382 : Adaptable interconnections, e.g. for engineering changes
• CPC Class Codes: H01L 23/5385 : Assembly of a plurality of insulating substrates
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/03 : Manufacturing methods
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/14 : of a plurality of bump connectors
• CPC Class Codes: H01L 24/16 : of an individual bump connector
• CPC Class Codes: H01L 24/24 : of an individual high density interconnect connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/33 : of a plurality of layer connectors
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 24/82 : by forming build-up interconnects at chip-level, e.g. for high density interconnects [HDI] interconnection structure between a plurality of semiconductor chips H01L23/5389
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 25/0652 : the devices being arranged next and on each other, i.e. mixed assemblies
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 25/50 : Multistep manufacturing processes of assemblies consisting of devices, each device being of a type provided for in group H01L27/00 or H01L29/00 H01L21/50 takes precedence
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
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• CPC Class Codes: H01L 2924/19107 : off-chip wires
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A method is provided. The method includes attaching a bridge layer to a first substrate. The method also includes forming a first connector, the first connector electrically connecting the bridge layer to the first substrate. The method also includes coupling a first die to the bridge layer and the first substrate, and coupling a second die to the bridge layer.

Claims

1. A method, comprising:

patterning a second substrate to form a plurality of trenches;

depositing an isolation layer over the second substrate;

removing portions of the second substrate to form a bridge layer, wherein the portions of the second substrate that are removed are defined at least in part by sidewalls of the plurality of trenches;

attaching the bridge layer to a first substrate, wherein after the bridge layer is attached to the first substrate the bridge layer comprises a plurality of first bond pads on a surface of the bridge layer that opposes the first substrate, the first substrate comprises a plurality of second bond pads disposed on a surface of the first substrate facing the bridge layer, and the plurality of second bond pads is positioned outside of a lateral extent of the bridge layer;

electrically connecting a first bond pad of the plurality of first bond pads to a second bond pad of the plurality of second bond pads using a first connector;

coupling a first die to the bridge layer using the plurality of first bond pads and to the first substrate using the plurality of second bond pads; and

coupling a second die to the bridge layer.

2. The method according to claim 1, wherein attaching the bridge layer to the first substrate comprises using an adhesive layer.

3. The method according to claim 1, wherein the first connector is electrically connected to a power or ground terminal of the first substrate.

4. The method according to claim 1, wherein coupling the first die to the bridge layer and the first substrate comprises coupling the first die to the bridge layer and the first substrate using a plurality of second connectors and a plurality of third connectors, the plurality of second connectors extending between the first die and the bridge layer, and the plurality of third connectors extending between the first die and the first substrate.

5. The method according to claim 1, further comprising injecting a first underfill in a space between the first die, the bridge layer, and the first substrate after coupling the first die to the bridge layer and the first substrate.

6. The method according to claim 5, further comprising injecting a second underfill in a space between the second die and the bridge layer after coupling the second die to the bridge layer.

7. The method according to claim 1, further comprising testing the first die after coupling the first die to the bridge layer and the first substrate.

8. The method according to claim 1, wherein the first connector comprises a bond wire.

9. The method according to claim 1, wherein forming the first connector comprises:

placing a preformed solder sphere on the second bond pad of the plurality of second bond pads; and

reflowing the solder sphere.

10. A method, comprising:

patterning a second substrate to form a trench;

depositing an isolation material on the second substrate, the isolation material coating sidewalls of the trench;

removing portions of the second substrate to form a bridge, a sidewall of the bridge being defined by a sidewall of the trench;

adhering the bridge to a first substrate;

coupling a first connector to a first bond pad on the bridge and to a second bond pad on the first substrate;

attaching a first die to the bridge and to the first substrate using second connectors and third connectors, the second connectors extending between the first die and the first substrate, the third connectors extending between the first die and the bridge, wherein a thickness of the second connectors is larger than a thickness of the third connectors;

injecting a first underfill into spaces surrounding the second connectors and the third connectors, the first underfill contacting the first die and the first substrate; and

attaching a second die to the bridge, the bridge extending laterally past opposite sidewalls of the second die.

11. The method according to claim 10, wherein coupling the first connector to the first bond pad on the bridge and to the second bond pad on the first substrate comprises coupling a first end of a bond wire to the first bond pad and coupling a second end of the bond wire to the second bond pad.

12. The method according to claim 10, wherein coupling the first connector to the first bond pad on the bridge and to the second bond pad on the first substrate comprises:

placing a preformed solder sphere on the second bond pad; and

reflowing the solder sphere.

13. The method according to claim 10, further comprising:

injecting a second underfill in a space between the second die and the bridge.

14. The method according to claim 10, wherein the first connector contacts a sidewall of the bridge.

15. A method, comprising:

forming a bridge, the bridge having a plurality of first bond pads on a first surface of the bridge, wherein forming the bridge comprises;

patterning a second substrate to form a trench;

depositing an isolation material on the second substrate, the isolation material coating sidewalls of the trench; and

removing portions of the second substrate to form a bridge, a sidewall of the bridge being defined by a sidewall of the trench;

coupling the bridge to a first substrate, the first surface of the bridge facing away from the first substrate;

forming a first connector, the first connector electrically connecting a first bond pad of the plurality of first bond pads to a second bond pad disposed on a second surface of the first substrate, the first connector being external to the bridge and extending along a sidewall of the bridge;

after forming the first connector, coupling a first die to the first substrate and the bridge, the first die overlying a sidewall of the bridge; and

coupling a second die to the bridge.

16. The method according to claim 15, wherein the bridge is coupled to a portion of the second surface of the first substrate, the portion of the second surface being substantially free from bond pads.

17. The method according to claim 15, wherein coupling the first die to the first substrate comprises coupling a second connector to a third bond pad, the second connector being physically connected to the first die, the third bond pad being disposed on the second surface of the first substrate.

18. The method according to claim 17, wherein a sidewall of the second connector is adjacent to a sidewall of the bridge.

19. The method according to claim 15, further comprising:

injecting an underfill into a space between the first die and the bridge.

20. The method according to claim 15, wherein coupling the bridge to the first substrate comprises coupling the bridge to the first substrate using an adhesive layer.