Light irradiation type heat treatment apparatus and heat treatment method

• US 10,643,869 B2
• Filed: 01/11/2018
• Issued: 05/05/2020
• Est. Priority Date: 02/21/2017
• Status: Active Grant

• Current Assignee: SCREEN Holdings Co., Ltd.
• Original Assignee: SCREEN Holdings Co., Ltd.
• Inventors: Kitazawa, Takahiro, Fuse, Kazuhiko
• Primary Examiner(s): Au, Bac H
• Application Number:
  US15/868,668
• Publication Number:
  US 20180240689A1
• Time in Patent Office: 845 Days
• CPC Class Codes: H01L 21/2253 by ion implantation
• CPC Class Codes: H01L 21/2686 using incoherent radiation
• CPC Class Codes: H01L 21/67115 mainly by radiation
• CPC Class Codes: H01L 21/67248 Temperature monitoring
• CPC Class Codes: H01L 21/67288 Monitoring of warpage, curvature, damage, defects or the like
• CPC Class Codes: H01L 21/681 using optical controlling means
• CPC Class Codes: H01L 21/68707 the wafers being placed on a robot blade, or gripped by a gripper for conveyance
• CPC Class Codes: H01L 21/6875 characterised by a plurality of individual support members, e.g. support posts or protrusions
• CPC Class Codes: H01L 21/68785 characterised by the mechanical construction of the susceptor, stage or support
• CPC Class Codes: H01L 22/10 Measuring as part of the manufacturing process burn-in G01R31/2855
• CPC Class Codes: H01L 22/26 Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement endpoint detection arrangements in CMP apparatus B24B37/013, in discharge apparatus H01J37/32

Abstract

A semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon is warped along an axis, i.e., a diameter along a <100> direction of the semiconductor wafer when irradiated with a flash of light. The semiconductor wafer is placed on a susceptor while the direction of the semiconductor wafer is adjusted so that the diameter along the <100> direction coincides with an optical axis of an upper radiation thermometer. This adjustment makes a diameter along a direction in which a warp of the semiconductor wafer is smallest during irradiation with a flash of light coincide with the optical axis of the upper radiation thermometer. As a result, the semiconductor wafer is hardly warped along the optical axis direction of the upper radiation thermometer even during irradiation with a flash of light, thus hardly changing the emissivity of the semiconductor wafer, so that it is possible to accurately measure the temperature of an upper surface of the semiconductor wafer.

Claims

1. A heat treatment apparatus for irradiating a disk-shaped substrate with a flash of light to heat the substrate, said heat treatment apparatus comprising:

an alignment mechanism for adjusting a direction of a substrate;

a chamber for receiving said substrate therein and heat-treating said substrate;

a susceptor which is disposed in said chamber and on which said substrate is placed and held;

a transport part for transporting said substrate from said alignment mechanism to said susceptor in said chamber;

a flash lamp that is provided over said chamber and irradiates with a flash of light an upper surface of said substrate placed on said susceptor; and

a radiation thermometer that is disposed diagonally above said substrate placed on said susceptor and receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface,

said alignment mechanism adjusting the direction of said substrate so that a diameter along a direction in which a warp of said substrate is smallest coincides with an optical axis of said radiation thermometer when said flash lamp emits a flash of light.

2. The heat treatment apparatus according to claim 1, wherein

said substrate is a semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon, and

said alignment mechanism adjusts the direction of said substrate so that a diameter along a <

100>

direction of said substrate coincides with the optical axis of said radiation thermometer.

3. A heat treatment apparatus for irradiating a disk-shaped substrate with a flash of light to heat the substrate, said heat treatment apparatus comprising:

an alignment mechanism for adjusting a direction of a substrate;

a chamber for receiving said substrate therein and heat-treating said substrate;

a susceptor which is disposed in said chamber and on which said substrate is placed and held;

a transport part for transporting said substrate from said alignment mechanism to said susceptor in said chamber;

a flash lamp that is provided over said chamber and irradiates with a flash of light an upper surface of said substrate placed on said susceptor; and

a radiation thermometer that is disposed diagonally above said substrate placed on said susceptor and receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface,

said substrate being a semiconductor wafer that has a plane orientation of (100) and is made of monocrystalline silicon, and

said alignment mechanism adjusting the direction of said substrate so that a bisector of an angle between two diameters along a <

100>

direction of said substrate coincides with an optical axis of said radiation thermometer.

4. A heat treatment apparatus for irradiating a disk-shaped substrate with a flash of light to heat the substrate, said heat treatment apparatus comprising:

an alignment mechanism for adjusting a direction of a substrate;

a chamber for receiving said substrate therein and heat-treating said substrate;

a susceptor which is disposed in said chamber and on which said substrate is placed and held;

a transport part for transporting said substrate from said alignment mechanism to said susceptor in said chamber;

a flash lamp that is provided over said chamber and irradiates with a flash of light an upper surface of said substrate placed on said susceptor;

a first radiation thermometer that is disposed diagonally above said substrate placed on said susceptor and receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface; and

a second radiation thermometer that is disposed diagonally above said substrate and separated from said first radiation thermometer by 90°

with a center of said substrate viewed as a vertex and that receives infrared radiation emitted from an upper surface of said substrate to measure a temperature of the upper surface,

said substrate being a semiconductor wafer having a plane orientation of (100) and is made of monocrystalline silicon, and

said alignment mechanism adjusting the direction of said substrate so that two diameters along a <

100>

direction of said substrate coincide with optical axes of said first radiation thermometer and said second radiation thermometer.