Pre-treatment method to improve selectivity in a selective deposition process
First Claim
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1. A method for improving the selectivity of metal, the method comprising:
- providing a substrate in a semiconductor processing chamber, the substrate having metal lines formed in a dielectric layer;
reducing the metal from a metal oxide to metal by removing organic contamination from the metal; and
oxidizing the metal by flowing O2 or O2 plasma into the semiconductor processing chamber and allowing a monolayer of metal oxide to thermally grow on a surface of the metal after reducing the metal.
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Abstract
A method of improving selectivity of a metal in a selective deposition process. A pre-treatment process for the metal modifies the metal surface, and includes first reducing the metal to remove organic contamination from the metal followed by oxidation of the metal to allow a monolayer of a metal oxide to grow on the surface. This modification of the metal allows inhibitor molecules to adsorb on the metal oxide monolayer to improve selectivity.
9 Citations
19 Claims
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1. A method for improving the selectivity of metal, the method comprising:
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providing a substrate in a semiconductor processing chamber, the substrate having metal lines formed in a dielectric layer; reducing the metal from a metal oxide to metal by removing organic contamination from the metal; and oxidizing the metal by flowing O2 or O2 plasma into the semiconductor processing chamber and allowing a monolayer of metal oxide to thermally grow on a surface of the metal after reducing the metal. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for improving the selectivity of copper deposited by an electrofill process, the method comprising:
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providing a substrate in a semiconductor processing chamber, the substrate having copper lines formed in a dielectric layer; reducing the copper from a copper oxide to copper by removing organic contamination from the copper; oxidizing the copper by flowing O2 or O2 plasma into the semiconductor processing chamber and allowing a monolayer of copper oxide to thermally grow on a surface of the copper after reducing the copper; and depositing inhibitor molecules that are selective only to the copper and allowing the inhibitor molecules to adsorb on the monolayer of copper oxide after allowing the monolayer to grow. - View Dependent Claims (11, 12, 13, 14, 15)
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16. A method for improving the selectively depositing an etch stop layer, the method comprising:
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providing a substrate in a semiconductor processing chamber, the substrate having a dielectric on its surface; depositing copper onto the surface of the substrate by an electrofill process; chemically mechanically polishing the copper deposited by the electrofill process; flowing a plasma mixture of ammonia and nitrogen into the chamber to reduce the copper from a copper oxide to copper by removing organic contamination from the copper after chemically mechanically polishing the copper; flowing an oxygen plasma or oxygen into the chamber to oxidize the copper and allowing a monolayer of copper oxide to grow on a surface of the copper after reducing the copper; depositing thiol molecules that are selective only to the copper and allowing the thiol molecules to adsorb on the monolayer of copper oxide after allowing the monolayer to grow; and selectively depositing an etch stop layer over the dielectric layer. - View Dependent Claims (17, 18, 19)
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Specification