Metal loss prevention using implantation
First Claim
1. A method for semiconductor processing, the method comprising:
- depositing a conductive feature in a dielectric layer, wherein the conductive feature is in direct contact with the dielectric layer;
after depositing the conductive feature, implanting an implant species into the dielectric layer;
after implanting the implant species, removing a portion of the conductive feature by a first planarization process;
after removing the portion of the conductive feature, implanting another implant species into the dielectric layer; and
after implanting the another implant species, removing another portion of the conductive feature and the dielectric layer by a second planarization process.
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Accused Products
Abstract
The present disclosure provides methods for forming conductive features in a dielectric layer without using adhesion layers or barrier layers and devices formed thereby. In some embodiments, a structure comprising a dielectric layer over a substrate, and a conductive feature disposed through the dielectric layer. The dielectric layer has a lower surface near the substrate and a top surface distal from the substrate. The conductive feature is in direct contact with the dielectric layer, and the dielectric layer comprises an implant species. A concentration of the implant species in the dielectric layer has a peak concentration proximate the top surface of the dielectric layer, and the concentration of the implant species decreases from the peak concentration in a direction towards the lower surface of the dielectric layer.
3 Citations
20 Claims
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1. A method for semiconductor processing, the method comprising:
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depositing a conductive feature in a dielectric layer, wherein the conductive feature is in direct contact with the dielectric layer; after depositing the conductive feature, implanting an implant species into the dielectric layer; after implanting the implant species, removing a portion of the conductive feature by a first planarization process; after removing the portion of the conductive feature, implanting another implant species into the dielectric layer; and after implanting the another implant species, removing another portion of the conductive feature and the dielectric layer by a second planarization process. - View Dependent Claims (2, 3, 4, 5, 6, 18)
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7. A method for semiconductor processing, the method comprising:
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depositing a dielectric material over a substrate having a conductive material; forming an opening in the dielectric material to expose the conductive material; depositing a conductive feature in the opening and directly contacting the conductive material, wherein depositing the conductive feature forms an overfill portion above the dielectric material; performing a first implantation process to implant an implant species in the dielectric material; after performing the first implantation process, performing a first planarization process to remove a portion of the conductive feature, wherein performing the first planarization process removes the overfill portion of the conductive material; after performing the first planarization process, performing a second implantation process to implant another implant species in the dielectric material; and after performing the second implantation process, performing a second planarization process to remove a portion of the dielectric material and a portion of the conductive material. - View Dependent Claims (8, 9, 10, 11, 19, 20)
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12. A method for semiconductor processing, the method comprising:
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depositing a dielectric material over a substrate; forming an opening in the dielectric material to expose a conductive feature; filling the opening with a conductive material, wherein a gap is interposed between the conductive material and a sidewall of the opening; performing a first implantation process to implant an implant species in the dielectric material, wherein a width of the gap decreases after performing the first implantation process; after performing the first implantation process, performing a first planarization process to remove a portion of the conductive material; after performing the first planarization process, performing a second implantation process to implant another implant species in the dielectric material; and after performing the second implantation process, performing a second planarization process to remove a portion of the dielectric material and a portion of the conductive material, wherein the implant species and the another implant species are one or more neutral species. - View Dependent Claims (13, 14, 15, 16, 17)
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Specification