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Method of forming a semiconductor device

  • US 10,643,897 B2
  • Filed: 01/12/2017
  • Issued: 05/05/2020
  • Est. Priority Date: 01/14/2016
  • Status: Active Grant
First Claim
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1. A method of forming a semiconductor device, the method comprising:

  • forming a semiconductor layer on a first surface of a semiconductor substrate, wherein impurities are introduced into a first sub-layer adjoining the semiconductor substrate at the first surface of the semiconductor substrate, the impurities being configured to absorb electromagnetic radiation of an energy smaller than a bandgap energy of the semiconductor substrate;

    irradiating the semiconductor substrate with electromagnetic radiation, the electromagnetic radiation being absorbed by the impurities thereby generating a local damage of a crystal lattice of the semiconductor substrate; and

    subsequent to and independent from irradiating the semiconductor substrate with the electromagnetic radiation, applying thermal processing to the semiconductor substrate and the semiconductor layer, including at the local damage, to regulate a temperature thereof, wherein the thermal processing is configured to cause a crack formation along the local damage of the crystal lattice by thermo-mechanical stress; and

    separating the semiconductor layer and the semiconductor substrate by the thermal processing of the semiconductor substrate and the semiconductor layer.

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