Methods for forming a semiconductor device and related semiconductor device structures
First Claim
1. A method for forming a semiconductor device comprising:
- forming an interface layer on a surface of a semiconductor substrate, wherein the interface layer is disposed in an NMOS trench region and a PMOS trench region;
forming an NMOS gate dielectric over the interface layer in the NMOS trench region and a PMOS gate dielectric over the interface layer in the PMOS trench region;
forming a first work function metal directly on the NMOS gate dielectric and directly on the PMOS gate dielectric;
removing the first work function metal over the NMOS gate dielectric; and
forming a second work function metal directly on the NMOS gate dielectric and directly on the first work function metal over the PMOS gate dielectric,wherein the first work function metal comprises a metal nitride and wherein the second work function metal comprises at least one of a transition metal carbide and a transition metal aluminide.
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Abstract
Methods for forming a semiconductor device and related semiconductor device structures are provided. In some embodiments, methods may include forming an NMOS gate dielectric and a PMOS gate dielectric over a substrate and forming a first work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, methods may also include, removing the first work function metal over the NMOS gate dielectric and forming a second work function metal over the NMOS gate dielectric and over the PMOS gate dielectric. In some embodiments, related semiconductor device structures may include an NMOS gate dielectric and a PMOS gate dielectric disposed over a semiconductor substrate. A PMOS gate electrode may be disposed over the PMOS gate dielectric and the PMOS gate electrode may include a first work function metal disposed over the PMOS gate dielectric and a second work function metal disposed over the first work function metal. A NMOS gate electrode may be disposed over the NMOS gate dielectric and the NMOS gate electrode may include the second work function metal.
3122 Citations
20 Claims
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1. A method for forming a semiconductor device comprising:
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forming an interface layer on a surface of a semiconductor substrate, wherein the interface layer is disposed in an NMOS trench region and a PMOS trench region; forming an NMOS gate dielectric over the interface layer in the NMOS trench region and a PMOS gate dielectric over the interface layer in the PMOS trench region; forming a first work function metal directly on the NMOS gate dielectric and directly on the PMOS gate dielectric; removing the first work function metal over the NMOS gate dielectric; and forming a second work function metal directly on the NMOS gate dielectric and directly on the first work function metal over the PMOS gate dielectric, wherein the first work function metal comprises a metal nitride and wherein the second work function metal comprises at least one of a transition metal carbide and a transition metal aluminide. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for forming a CMOS semiconductor device comprising:
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forming an NMOS gate dielectric and a PMOS gate dielectric over a semiconductor substrate; depositing by atomic layer deposition a niobium nitride layer directly onto the NMOS gate dielectric and directly onto the PMOS gate dielectric; etching the niobium nitride layer over the NMOS gate dielectric; depositing by atomic layer deposition at least one of a transition metal aluminide and a transition metal carbide directly onto the NMOS gate dielectric and directly onto the niobium nitride layer that is over the PMOS gate dielectric; depositing a liner material over the at least one of the transition metal aluminide and the transition metal carbide; and depositing a metal fill material over the liner material. - View Dependent Claims (10, 11, 12, 13)
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14. A semiconductor device structure comprising:
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an interface layer disposed over a semiconductor substrate in an NMOS trench region and a PMOS trench region; an NMOS gate dielectric disposed over the interface layer in the NMOS trench region and a PMOS gate dielectric disposed over the interface layer in the PMOS trench region; a PMOS gate electrode disposed over the PMOS gate dielectric, the PMOS gate electrode comprising; a first work function metal disposed directly on the PMOS gate dielectric; and a second work function metal disposed directly on the first work function metal; and an NMOS gate electrode disposed over the NMOS gate dielectric, the NMOS gate electrode comprising the second work function metal directly on the NMOS gate dielectric, wherein the first work function metal comprises a metal nitride and wherein the second work function metal comprises at least one of a transition metal carbide and a transition metal aluminide. - View Dependent Claims (15, 16, 17, 18, 19, 20)
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Specification