Semiconductor device

• US 10,643,922 B2
• Filed: 08/28/2018
• Issued: 05/05/2020
• Est. Priority Date: 11/17/2017
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Otsubo, Yoshitaka, Kimura, Yoshitaka
• Primary Examiner(s): Carpenter, Robert K
• Application Number:
  US16/115,463
• Publication Number:
  US 20190157182A1
• Time in Patent Office: 616 Days
• Field of Search: None
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 23/04 characterised by the shape of the container or parts, e.g. caps, walls
• CPC Class Codes: H01L 23/10 characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 23/3735 Laminates or multilayers, e.g. direct bond copper ceramic substrates
• CPC Class Codes: H01L 23/3736 Metallic materials H01L23/3732, H01L23/3733, H01L23/3735, H01L23/3737, H01L23/3738 take precedence
• CPC Class Codes: H01L 23/4926 the materials containing semiconductor material
• CPC Class Codes: H01L 23/49568 specifically adapted to facilitate heat dissipation
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/19107 off-chip wires

Abstract

A base plate includes a heat dissipation metal plate and a resin insulating layer. The resin insulating layer is formed on the heat dissipation metal plate. The resin insulating layer is provided with a notch where part of the heat dissipation metal plate is exposed. A case is bonded to an exposure part being part of the heat dissipation metal plate by means of a bonding agent.

Claims

1. A semiconductor device comprising:

a base plate bonded to a case by means of a bonding agent, wherein

the base plate includes a heat dissipation metal plate having a heat dissipation property, and a resin insulating layer structured by resin,

the resin insulating layer is formed on the heat dissipation metal plate,

the resin insulating layer is provided with a notch where part of the heat dissipation metal plate is exposed,

the case is bonded, by means of the bonding agent, to an exposure part being a groove existing in the heat dissipation metal plate and exposed by the notch, and

the bonding agent directly contacts with the case and an inner surface of the groove existing in the heat dissipation metal plate.

2. The semiconductor device according to claim 1, wherein

a cross-sectional shape of the groove is circular.

3. The semiconductor device according to claim 1, wherein the exposure part exists at a rim part of the heat dissipation metal plate.

4. The semiconductor device according to claim 1, wherein the exposure part exists over four corners of the heat dissipation metal plate.

5. The semiconductor device according to claim 1, wherein

the heat dissipation metal plate has a plurality of the exposure parts, and

the plurality of exposure parts are spaced apart from each other.

6. The semiconductor device according to claim 1, wherein the heat dissipation metal plate is structured by any of aluminum, silver, and copper.

7. The semiconductor device according to claim 1, wherein the heat dissipation metal plate is structured by alloy composed of at least two materials out of aluminum, silver, and copper.

8. The semiconductor device according to claim 1, wherein

a metal circuit board is formed on the resin insulating layer, and

the metal circuit board is structured by any of aluminum, silver, and copper.

9. The semiconductor device according to claim 1, wherein

a metal circuit board is formed on the resin insulating layer, and

the metal circuit board is structured by an alloy composed of at least two materials out of aluminum, silver, and copper.

10. The semiconductor device according to claim 1, wherein

the base plate is provided with a semiconductor element, and

the semiconductor element is formed by using a wide-bandgap material.