Fluorine-containing conductive films

• US 10,643,925 B2
• Filed: 04/17/2014
• Issued: 05/05/2020
• Est. Priority Date: 04/17/2014
• Status: Active Grant

• Current Assignee: ASM IP Holding B.V. (ASM International NV)
• Original Assignee: ASM IP Holding B.V. (ASM International NV)
• Inventors: Blomberg, Tom E., Lindroos, Linda, Huotari, Hannu
• Primary Examiner(s): Wieczorek, Michael P
• Assistant Examiner(s): Miller, Michael G
• Application Number:
  US14/255,799
• Publication Number:
  US 20150303101A1
• Time in Patent Office: 2,210 Days
• Field of Search: 4272481-2557
• CPC Class Codes: C23C 16/34 Nitrides C23C16/303 takes precedence
• CPC Class Codes: C23C 16/45527 characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
• CPC Class Codes: H01L 21/28562 Selective deposition
• CPC Class Codes: H01L 21/76841 Barrier, adhesion or liner layers
• CPC Class Codes: H01L 21/76898 formed through a semiconductor substrate
• CPC Class Codes: H01L 23/48 Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 2924/0001 Technical content checked by a classifier
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

An atomic layer deposition (ALD) process for depositing a fluorine-containing thin film on a substrate can include a plurality of super-cycles. Each super-cycle may include a metal fluoride sub-cycle and a reducing sub-cycle. The metal fluoride sub-cycle may include contacting the substrate with a metal fluoride. The reducing sub-cycle may include alternately and sequentially contacting the substrate with a reducing agent and a nitrogen reactant.

Claims

1. A continuous fluoride thin film comprising TiF₃ and TiN and having a resistivity of less than 10⁶ μ

Ω

cm.

2. The thin film of claim 1, wherein the thin film comprises about 5 to about 40 at % nitrogen.

3. The thin film of claim 1, wherein the thin film has a thickness of less than about 100 nm.

4. The thin film of claim 1, wherein the thin film is deposited by a vapor deposition process.

5. The thin film of claim 4, wherein the vapor deposition process is an atomic layer deposition (ALD) process.

6. The thin film of claim 4, wherein the vapor deposition process is a chemical vapor deposition (CVD) process.

7. The thin film of claim 1, wherein the thin film has a resistivity of from about 500 μ

Ω

cm to about 10⁵ μ

Ω

cm.

8. The thin film of claim 1, wherein the thin film has a resistivity of from about 5,000 μ

Ω

cm to about 50,000 μ

Ω

cm.

9. The thin film of claim 1, wherein the thin film comprises more than about 10 at % fluorine.

10. The thin film of claim 9, wherein the thin film comprises about 20 to about 75 at % fluorine.

11. The thin film of claim 9, wherein the thin film has a ratio of a concentration of fluorine to a concentration of titanium from about 0.25 to about 5.

12. The thin film of claim 1, wherein the thin film does not comprise more than about 20 at % of metals other than titanium.

13. The thin film of claim 1, wherein the thin film comprises less than about 2.5 at % oxygen.

14. The thin film of claim 1, wherein the thin film is not a nanolaminate film and separate layers of metal fluoride and metal nitride are not observable.

15. The thin film of claim 1, wherein the thin film does not comprise a columnar grain structure.

16. The thin film of claim 1, wherein the thin film has a root mean squared (RMS) surface roughness of below about 2 nm.

17. The thin film claim of 4, wherein the vapor deposition process includes two or more reactants.

18. The thin film claim of 17, wherein the vapor deposition process includes three or more reactants.