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Ring isolated through-substrate vias for high resistivity substrates

  • US 10,643,927 B1
  • Filed: 11/16/2018
  • Issued: 05/05/2020
  • Est. Priority Date: 11/16/2018
  • Status: Active Grant
First Claim
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1. A semiconductor chip comprising:

  • a high resistivity semiconductor substrate;

    an electronic device formed over a front side of the substrate;

    a through-substrate via laterally spaced from the electronic device;

    a first deep trench isolation structure extending at least partially through the substrate and laterally spaced from and surrounding the electronic device; and

    a second deep trench isolation structure extending at least partially through the substrate and laterally spaced from and surrounding the through-substrate via,wherein a portion of the first deep trench isolation structure is contiguous with a portion of the second deep trench isolation structure.

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