Conformal dummy die

• US 10,643,957 B2
• Filed: 08/27/2018
• Issued: 05/05/2020
• Est. Priority Date: 08/27/2018
• Status: Active Grant

• Current Assignee: NXP B.V. (NXP Semiconductors NV)
• Original Assignee: NXP B.V. (NXP Semiconductors NV)
• Inventors: Kamphuis, Antonius Hendrikus Jozef, Mavinkurve, Amar Ashok, De Witte, Jetse, Damian, Andrei-Alexandru
• Primary Examiner(s): Yechuri, Sitaramarao S
• Application Number:
  US16/113,387
• Publication Number:
  US 20200066653A1
• Time in Patent Office: 617 Days
• CPC Class Codes: H01L 21/30625 With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
• CPC Class Codes: H01L 21/565 Moulds
• CPC Class Codes: H01L 21/78 with subsequent division of the substrate into plural individual devices cutting to change the surface-physical characteristics or shape of semiconductor bodies H01L21/304
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05164 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05664 Palladium [Pd] as principal constituent
• CPC Class Codes: H01L 2224/05666 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05671 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05684 : Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/0603 : Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/1148 : Permanent masks, i.e. masks left in the finished device, e.g. passivation layers
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/13101 : the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/291 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 2224/29101 : the principal constituent melting at a temperature of less than 400°C
• CPC Class Codes: H01L 2224/2919 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29191 : The principal constituent being an elastomer, e.g. silicones, isoprene, neoprene
• CPC Class Codes: H01L 2224/2929 : with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
• CPC Class Codes: H01L 2224/29386 : with a principal constituent of the material being a non metallic, non metalloid inorganic material
• CPC Class Codes: H01L 2224/29393 : with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
• CPC Class Codes: H01L 2224/32225 : the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/32245 : the item being metallic
• CPC Class Codes: H01L 2224/33181 : On opposite sides of the body
• CPC Class Codes: H01L 2224/45099 : Material
• CPC Class Codes: H01L 2224/48091 : Arched
• CPC Class Codes: H01L 2224/48106 : the connector being orthogonal to a side surface of the semiconductor or solid-state body, e.g. parallel layout
• CPC Class Codes: H01L 2224/48175 : the item being metallic
• CPC Class Codes: H01L 2224/48247 : connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4845 : Details of ball bonds
• CPC Class Codes: H01L 2224/48463 : the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
• CPC Class Codes: H01L 2224/48465 : the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
• CPC Class Codes: H01L 2224/48482 : on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/48499 : Material of the auxiliary connecting means
• CPC Class Codes: H01L 2224/49112 : the connectors connecting a common bonding area on the semiconductor or solid-state body to different bonding areas outside the body, e.g. diverging wires
• CPC Class Codes: H01L 2224/73215 : Layer and wire connectors
• CPC Class Codes: H01L 2224/73265 : Layer and wire connectors
• CPC Class Codes: H01L 2224/78301 : Capillary
• CPC Class Codes: H01L 2224/85045 : using a corona discharge, e.g. electronic flame off [EFO]
• CPC Class Codes: H01L 2224/85051 : Forming additional members, e.g. for "wedge-on-ball", "ball-on-wedge", "ball-on-ball" connections
• CPC Class Codes: H01L 2224/85181 : connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
• CPC Class Codes: H01L 2224/85411 : Tin (Sn) as principal constituent
• CPC Class Codes: H01L 2224/85424 : Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/85444 : Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/85447 : Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/85455 : Nickel (Ni) as principal constituent
• CPC Class Codes: H01L 2224/8592 : Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/92247 : the second connecting process involving a wire connector
• CPC Class Codes: H01L 23/16 : Fillings or auxiliary members in containers or encapsulations, e.g. centering rings H01L23/42, H01L23/552 take precedence
• CPC Class Codes: H01L 23/3107 : the device being completely enclosed
• CPC Class Codes: H01L 23/3121 : a substrate forming part of the encapsulation
• CPC Class Codes: H01L 23/49541 : Geometry of the lead-frame
• CPC Class Codes: H01L 23/49575 : Assemblies of semiconductor devices on lead frames
• CPC Class Codes: H01L 23/562 : Protection against mechanical damage H01L23/02, H01L23/28 take precedence
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/06 : of a plurality of bonding areas
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 24/29 : of an individual layer connector
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/83 : using a layer connector
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 24/92 : Specific sequence of method steps
• CPC Class Codes: H01L 24/94 : at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/0503 : 13th Group
• CPC Class Codes: H01L 2924/05032 : AlN
• CPC Class Codes: H01L 2924/0532 : 2nd Group
• CPC Class Codes: H01L 2924/0665 : Epoxy resin
• CPC Class Codes: H01L 2924/07025 : Polyimide
• CPC Class Codes: H01L 2924/0715 : Polysiloxane
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/2064 : larger or equal to 1 micron less than 100 microns
• CPC Class Codes: H01L 2924/3511 : Warping

Abstract

Embodiments of packaged semiconductor devices and methods of making thereof are provided herein, which include a semiconductor die having a plurality of pads on an active side; a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads; and a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die.

Claims

1. A packaged semiconductor device comprising:

a semiconductor die having a plurality of pads on an active side;

a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads;

a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die;

an under bump metallization (UBM) layer formed on the plurality of pads, wherein top surfaces of the UBM layer on the plurality of pads provide the plurality of bondable surfaces;

a plurality of solder bumps attached to the UBM layer on the plurality of pads, and

a fillet of the silicone-based glue laterally surrounding and contacting each solder bump, wherein the fillet provides a sealed barrier over the active surface of the semiconductor die within each opening of the dummy die.

2. The packaged semiconductor device of claim 1, wherein

each opening of the dummy die is aligned to a respective pad of the semiconductor die, and

a portion of the dummy die is located between adjacent pads.

3. The packaged semiconductor device of claim 1, wherein

the dummy die has a perimeter that corresponds to a perimeter of the semiconductor die.

4. The packaged semiconductor device of claim 1, wherein

the semiconductor die includes a stress-sensitive area on the active side, wherein the dummy die covers the stress-sensitive area.

5. The packaged semiconductor device of claim 4, wherein

the dummy die has a perimeter that extends beyond a perimeter of the stress-sensitive area by a minimum distance.

6. The packaged semiconductor device of claim 4, wherein

the stress-sensitive area extends underneath at least one of the plurality of pads on the semiconductor die.

7. The packaged semiconductor device of claim 1, wherein

the dummy die has a thickness in a range between 10 and 100 microns.

8. The packaged semiconductor device of claim 1, wherein

the silicone-based glue has a thickness in a range between 20 and 50 microns.

9. The packaged semiconductor device of claim 1, wherein

a portion of the plurality of openings are located in a peripheral part of the dummy die.

10. The packaged semiconductor device of claim 1, wherein

a portion of the plurality of openings are located in a central part of the dummy die.

11. The packaged semiconductor device of claim 1, wherein

the semiconductor die is one of a plurality of semiconductor dies as part of a semiconductor die wafer,

the dummy die is one of a plurality of dummy dies as part of a dummy die wafer, and

the silicone-based glue attaches the dummy die wafer to the semiconductor die wafer, wherein the plurality of bondable surfaces of each of the plurality of semiconductor dies are exposed through the plurality of openings of each of the plurality of dummy dies.

12. A packaged semiconductor device comprising:

a semiconductor die having a plurality of pads on an active side;

a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads; and

a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die;

a plurality of stud bumps formed on the plurality of pads, wherein top surfaces of the plurality of stud bumps provide the plurality of bondable surfaces; and

a fillet of the silicone-based glue laterally surrounding and contacting each stud bump, wherein the fillet provides a sealed barrier over the active surface of the semiconductor die within each opening of the dummy die.

13. A packaged semiconductor device comprising:

a semiconductor die having a plurality of pads on an active side;

a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads; and

a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die;

a plurality of ball bonds attached to the plurality of bondable surfaces within each opening of the dummy die; and

a fillet of the silicone-based glue laterally surrounding and contacting each ball bond, wherein the fillet provides a sealed barrier over the active surface of the semiconductor die within each opening of the dummy die.

14. A packaged semiconductor device comprising:

a semiconductor die having a plurality of pads on an active side;

a dummy die having a plurality of openings that extend from a first major surface to a second major surface opposite the first major surface, wherein the plurality of openings are aligned with the plurality of pads; and

a silicone-based glue attaching the dummy die to the active side of the semiconductor die, wherein a plurality of bondable surfaces of the semiconductor die are exposed through the plurality of openings of the dummy die;

a plurality of ball bonds attached to the plurality of bondable surfaces within each opening of the dummy die; and

a lead frame having a die flag and a plurality of lead fingers, wherein

a back side of the semiconductor die is attached to the die flag with die attach material, and

the plurality of ball bonds are part of a plurality of wire bond interconnects that also include tail bonds attached to the plurality of lead fingers.

15. The packaged semiconductor device of claim 14, further comprising:

an encapsulant body that encapsulates the lead frame, the semiconductor die, the dummy die, and the plurality of wire bond interconnects.