World band radio frequency front end module, system and method of power sensing thereof

• US 10,643,962 B1
• Filed: 07/24/2019
• Issued: 05/05/2020
• Est. Priority Date: 02/20/2013
• Status: Active Grant

• Current Assignee: Micro Mobio Corporation
• Original Assignee: Micro Mobio Corporation
• Inventors: Ichitsubo, Ikuroh, Inui, Shinsuke, Wang, Guan-Wu, Wang, Weiping, Filipovic, Zlatko, Kubota, Kanya
• Primary Examiner(s): Jackson, Blane J
• Application Number:
  US16/521,524
• Time in Patent Office: 286 Days
• CPC Class Codes: H01L 23/66 High-frequency adaptations
• CPC Class Codes: H03F 1/0272 by using a signal derived from the output signal
• CPC Class Codes: H03F 1/0277 Selecting one or more amplifiers from a plurality of amplifiers
• CPC Class Codes: H03F 2200/451 the amplifier being a radio frequency amplifier
• CPC Class Codes: H03F 2203/7239 the gated amplifier being switched on or off by putting into parallel or not, by choosing between amplifiers and shunting lines by one or more switch(es)
• CPC Class Codes: H03F 3/24 of transmitter output stages
• CPC Class Codes: H03F 3/72 Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
• CPC Class Codes: H03G 3/3042 in modulators, frequency-changers, transmitters or power amplifiers transmission power control in bidirectional transmission systems H04W52/04
• CPC Class Codes: H04B 1/006 using switches for selecting the desired band H04B1/0057 takes precedence
• CPC Class Codes: H04B 1/0458 Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages matching circuits in general H03H
• CPC Class Codes: H04B 1/0483 Transmitters with multiple parallel paths
• CPC Class Codes: H04B 2001/0408 with power amplifiers

Abstract

The present disclosure relates to a World Band Radio Frequency Power Amplifier and a World Band Radio Frequency Front End Module. The World Band Power Amplifier can contain at least one broadband power amplifier connected to a switch which can direct an RF input signal to a plurality of transmission paths, each transmission path configured for a different frequency. A power amplifier module has a forward power (FP) sensor and a reflective power (RP) sensor. A Voltage Standing Wave Ratio (VSWR) Processing Control Circuit (VPCC) is configured to tune the matching antenna for optimal radio frequency operation and protect the power amplifier in conjunction with the power amplifier protection controller. The World Band RFFE Module is more integrated version of the World Band Power Amplifier that can contain broadband RF PA(s), switches, logic controls, filters, duplexers and other active and passive components. The module may also include a thermal protection system capable of effecting operation of the broadband power amplifier.

Claims

1. An integrated module for use in a radio frequency (RF) front end system comprising:

a power amplifier configured to amplify an RF signal;

a bidirectional power sensor for measuring forward power (FP) and reflected power (RP) having a first part embedded in an output matching circuit which is coupled to an RF signal output of the power amplifier and a second part having a first sensor biasing circuit connected to a first diode for sensing forward power and a second sensor biasing circuit connected to a second diode for sensing reflected power; and

wherein the module is configured to send signals to a base band from the output of the power sensor and receive signals from the base band based on the output of the power sensor to manipulate the bias control of the power amplifier to turn the power amplifier off to protect the power amplifier from a high voltage standing wave ratio (VSWR) in high output operation.

2. The module of claim 1, wherein the power amplifier operates at a frequency greater than 100 MegaHertz.

3. The module of claim 1, further comprising:

a voltage standing wave ratio (VSWR) process control circuit (VPCC) connected to a first output of the first sensor biasing circuit and a second output of the second sensor biasing circuit.

4. The module of claim 3, further comprising:

a power amplifier protection controller coupled to the VPCC and capable of controlling an antenna tuner controller to change the power amplifier load impedance.

5. The module of claim 3 further comprising:

a power amplifier protection controller coupled to the VPCC and capable of reducing the RF input to reduce the RF output.

6. The module of claim 3 further comprising:

a power amplifier protection controller coupled to the VPCC and capable of reducing the gain the of the power amplifier.

7. The module of claim 1 which is formed by a single chip.

8. An integrated module for use in a radio frequency (RF) front end system comprising:

a power amplifier configured to amplify an RF signal;

a bidirectional power sensor for measuring forward power (FP) and reflected power (RP) having a first part embedded in an output matching circuit which is coupled to an RF signal output of the power amplifier and a second part having a first sensor biasing circuit connected to a first diode for sensing forward power and a second sensor biasing circuit connected to a second diode for sensing reflected power; and

which is capable of sending an on or off signal to another power amplifier module based on the power sensor.

9. The module of claim 8, further comprising:

a voltage standing wave ratio (VSWR) process control circuit (VPCC) connected to a first output of the first sensor biasing circuit and a second output of the second sensor biasing circuit; and

wherein the VPCC detects a VSWR to control the sending of the on or off signal to the another power amplifier module.

10. The module of claim 8, further comprising:

a voltage standing wave ratio (VSWR) process control circuit (VPCC) connected to a first output of the first sensor biasing circuit and a second output of the second sensor biasing circuit; and

a power amplifier protection controller coupled to the VPCC and capable of reducing the gain the of the another power amplifier.

11. An integrated module for use in a radio frequency (RF) front end system comprising:

a power amplifier operating at a frequency greater than 15 GigaHertz and configured to amplify an RF signal; and

a bidirectional power sensor for measuring forward power (FP) and reflected power (RP) having a first part embedded in an output matching circuit which is coupled to an RF signal output of the power amplifier and a second part having a first sensor biasing circuit connected to a first diode for sensing forward power and a second sensor biasing circuit connected to a second diode for sensing reflected power.

12. The module of claim 11, further comprising:

a voltage standing wave ratio (VSWR) process control circuit (VPCC) connected to a first output of the first sensor biasing circuit and a second output of the second sensor biasing circuit.

13. The module of claim 12, wherein the VPCC detects a VSWR to control the power amplifier output.

14. The module of claim 12, further comprising:

a power amplifier protection controller coupled to the VPCC and capable of shutting down the power amplifier.

15. The module of claim 12, wherein the VPCC is configured to:

send a control signal to an antenna tuner controller to adjust an impedance matching of an antenna and the power amplifier.

16. The module of claim 12 further comprising:

a power amplifier protection controller coupled to the VPCC and capable of controlling an antenna tuner controller to change the power amplifier load impedance.

17. The module of claim 12 further comprising:

a power amplifier protection controller coupled to the VPCC and capable of reducing the RF input to reduce the RF output.

18. The module of claim 12 further comprising:

a power amplifier protection controller coupled to the VPCC and capable of reducing the gain the of the power amplifier.

19. The module of claim 11 which is formed by a single chip.

20. The module of claim 11 wherein the module is configured to send signals to a base band from the output of the power sensor and receive signals from the base band based on the output of the power sensor to manipulate the bias control of the power amplifier to turn the power amplifier off to protect the power amplifier from a high voltage standing wave ratio (VSWR) in high output operation.

21. An integrated module for use in a radio frequency (RF) front end system comprising:

a power amplifier configured to amplify an RF signal;

a bidirectional power sensor for measuring forward power (FP) and reflected power (RP) having a first part embedded in an output matching circuit which is coupled to an RF signal output of the power amplifier and a second part having a first sensor biasing circuit connected to a first diode for sensing forward power and a second sensor biasing circuit connected to a second diode for sensing reflected power;

a voltage standing wave ratio (VSWR) process control circuit (VPCC) connected to a first output of the first sensor biasing circuit and a second output of the second sensor biasing circuit;

a power amplifier protection controller coupled to the VPCC and capable of controlling an antenna tuner controller to change the power amplifier load impedance; and

wherein the module is configured to send signals to a base band from the output of the power sensor and receive signals from the base band based on the output of the power sensor to manipulate the bias control of the power amplifier to protect the power amplifier from a high voltage standing wave ratio (VSWR) in high output operation.