Semiconductor module and method for manufacturing the same

• US 10,643,969 B2
• Filed: 01/31/2017
• Issued: 05/05/2020
• Est. Priority Date: 02/24/2016
• Status: Active Grant

• Current Assignee: Mitsubishi Electric Corporation
• Original Assignee: Mitsubishi Electric Corporation
• Inventors: Ito, Yusaku
• Primary Examiner(s): Ojeh, Nduka E
• Application Number:
  US16/073,842
• Publication Number:
  US 20190043827A1
• Time in Patent Office: 1,190 Days
• CPC Class Codes: H01L 2224/04042 Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
• CPC Class Codes: H01L 2224/05557 comprising protrusions or indentations
• CPC Class Codes: H01L 2224/0603 Bonding areas having different sizes, e.g. different heights or widths
• CPC Class Codes: H01L 2224/32225 the item being non-metallic, e.g. insulating substrate with or without metallisation
• CPC Class Codes: H01L 2224/33181 On opposite sides of the body
• CPC Class Codes: H01L 2224/45124 Aluminium (Al) as principal constituent
• CPC Class Codes: H01L 2224/45144 Gold (Au) as principal constituent
• CPC Class Codes: H01L 2224/45147 Copper (Cu) as principal constituent
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48227 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/48472 the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
• CPC Class Codes: H01L 2224/48991 being formed on the semiconductor or solid-state body to be connected
• CPC Class Codes: H01L 2224/49111 the connectors connecting two common bonding areas, e.g. Litz or braid wires
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2224/73265 Layer and wire connectors
• CPC Class Codes: H01L 2224/85039 using a laser
• CPC Class Codes: H01L 2224/8592 Applying permanent coating, e.g. protective coating
• CPC Class Codes: H01L 2224/85939 using a laser
• CPC Class Codes: H01L 23/24 solid or gel at the normal operating temperature of the device H01L23/3135 takes precedence
• CPC Class Codes: H01L 23/29 characterised by the material , e.g. carbon interlayer dielectrics H01L23/5329
• CPC Class Codes: H01L 23/31 : characterised by the arrangement or shape
• CPC Class Codes: H01L 23/3135 : Double encapsulation or coating and encapsulation
• CPC Class Codes: H01L 23/3178 : Coating or filling in grooves made in the semiconductor body
• CPC Class Codes: H01L 23/48 : Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
• CPC Class Codes: H01L 23/498 : Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers shape of the substrate H01L23/13
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/32 : of an individual layer connector
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/49 : of a plurality of wire connectors
• CPC Class Codes: H01L 24/73 : Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
• CPC Class Codes: H01L 24/85 : using a wire connector wire bonding in general B23K20/004
• CPC Class Codes: H01L 25/18 : the devices being of types provided for in two or more different subgroups of the same main group of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00012 : Relevant to the scope of the group, the symbol of which is combined with the symbol of this group
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/13055 : Insulated gate bipolar transistor [IGBT]
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/181 : Encapsulation
• CPC Class Codes: H01L 2924/3512 : Cracking

Abstract

A semiconductor module includes: a semiconductor device having a front-side electrode; a bonding wire having a bonding portion bonded to the front-side electrode; a first sealing member; and a second sealing member. The first sealing member seals a portion where the front-side electrode and the bonding wire are bonded to each other. The second sealing member covers the first sealing member. The first sealing member is higher than the second sealing member in elastic modulus.

Claims

1. A semiconductor module comprising:

a semiconductor device having a front-side electrode;

a bonding wire having a bonding portion bonded to the front-side electrode;

a first sealing member filling a space between the bonding wire and the front-side electrode at a periphery of the bonding portion and having a first elastic modulus; and

a second sealing member covering the first sealing member, the second sealing member being in direct contact with the front-side electrode, and having a second elastic modulus,

the first elastic modulus being higher than the second elastic modulus,

the front-side electrode having a recess around the bonding portion,

the recess being formed away from the bonding portion,

the recess being filled with the first sealing member,

the recess has an opening, a side face, and a bottom, and in a plan view, the bottom or at least a part of the side face is located farther from the bonding portion than the opening is from the bonding portion.

2. The semiconductor module according to claim 1, wherein, in a plan view, the recess is formed so as to surround the bonding portion.

3. The semiconductor module according to claim 2, wherein the recess is continuously formed.

4. The semiconductor module according to claim 1, wherein the first sealing member is higher than the second sealing member in electric conductivity.

5. The semiconductor module according to claim 1, wherein the first sealing member is lower than the second sealing member in dielectric breakdown strength.

6. The semiconductor module according to claim 1, wherein the first elastic modulus is 70 GPa or more.

7. The semiconductor module according to claim 1, wherein the second elastic modulus is 30 GPa or less.

8. A method for manufacturing a semiconductor module, the method comprising:

bonding a bonding wire to a front-side electrode of a semiconductor device to form a bonding portion;

filling a space between the bonding wire and the front-side electrode with a first sealing member having a first elastic modulus at a periphery of the bonding portion;

covering the first sealing member with a second sealing member having a second elastic modulus such that the second sealing member is in direct contact with the front-side electrode; and

forming a recess around the bonding portion,

the recess being formed away from the bonding portion,

the first elastic modulus being higher than the second elastic modulus,

the recess has an opening and a bottom, in a plan view, the bottom is located farther from the bonding portion than the opening is from the bonding portion, and

the laser beam irradiates the front-side electrode, with the laser beam being inclined.

9. The method for manufacturing a semiconductor module according to claim 8, wherein the recess is formed by a laser beam irradiating the front-side electrode.