Array substrate, manufacturing method thereof, and display panel
First Claim
1. An array substrate for forming a display panel, comprising:
- a substrate;
a thin-film transistor disposed on the substrate, the thin-film transistor comprising a drain electrode;
a planarization layer disposed on the thin-film transistor, the planarization layer being provided with a first via hole for exposing the drain electrode;
a pixel electrode layer disposed on the surface of the planarization layer away from the substrate, the pixel electrode layer covering the first via hole and being in contact with the drain electrode; and
a photoresist layer covering the pixel electrode layer, and the photoresist layer filling the first via hole which is covered with the pixel electrode layer;
wherein a common electrode layer is disposed on the planarization layer and a passivation layer is disposed on and covers the common electrode layer, wherein the passivation layer has a part extending into the first via hole formed in the planarization, the first via hole being delimited by a sidewall that is formed of a part of the planarization layer, wherein the part of the passivation layer that extends into the first via hole covers the sidewall of the first via hole and directly contacts the part of the planarization layer that defines the sidewall;
wherein the pixel electrode layer is disposed on the passivation layer and covers the passivation layer, and the pixel electrode layer is in contact with the drain electrode through the first via hole; and
wherein the photoresist layer has a planar top surface that is distant from the pixel electrode layer, the planar top surface being extended to completely cover the thin-film transistor and also extended such that a photoresist column is formed on and integrally connected with the planar top surface of the photoresist layer.
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Abstract
The present invention discloses an array substrate for forming a display panel, comprising: a substrate; a thin-film transistor disposed on the substrate, the thin-film transistor comprising a drain electrode; a planarization layer disposed on the thin-film transistor, the planarization layer being provided with a first via hole for exposing the drain electrode; a pixel electrode layer disposed on the surface of the planarization layer away from the substrate, the pixel electrode layer covering the first via hole and being in contact with the drain electrode; and a photoresist layer covering the pixel electrode layer, and the photoresist layer filling the first via hole which is covered with the pixel electrode layer. The present invention solves the issues caused by the height difference in products.
7 Citations
10 Claims
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1. An array substrate for forming a display panel, comprising:
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a substrate; a thin-film transistor disposed on the substrate, the thin-film transistor comprising a drain electrode; a planarization layer disposed on the thin-film transistor, the planarization layer being provided with a first via hole for exposing the drain electrode; a pixel electrode layer disposed on the surface of the planarization layer away from the substrate, the pixel electrode layer covering the first via hole and being in contact with the drain electrode; and a photoresist layer covering the pixel electrode layer, and the photoresist layer filling the first via hole which is covered with the pixel electrode layer; wherein a common electrode layer is disposed on the planarization layer and a passivation layer is disposed on and covers the common electrode layer, wherein the passivation layer has a part extending into the first via hole formed in the planarization, the first via hole being delimited by a sidewall that is formed of a part of the planarization layer, wherein the part of the passivation layer that extends into the first via hole covers the sidewall of the first via hole and directly contacts the part of the planarization layer that defines the sidewall; wherein the pixel electrode layer is disposed on the passivation layer and covers the passivation layer, and the pixel electrode layer is in contact with the drain electrode through the first via hole; and wherein the photoresist layer has a planar top surface that is distant from the pixel electrode layer, the planar top surface being extended to completely cover the thin-film transistor and also extended such that a photoresist column is formed on and integrally connected with the planar top surface of the photoresist layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method for manufacturing an array substrate, comprising:
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providing a substrate; forming a thin-film transistor on the substrate; forming a planarization layer on the thin-film transistor; forming a first via hole in the planarization layer, the first via hole exposing a drain electrode of the thin-film transistor; forming a pixel electrode layer on the surface of the planarization layer away from the substrate, the pixel electrode layer covering the first via hole and being in contact with the drain electrode; and forming a photoresist layer on the pixel electrode layer, the photoresist layer covering the pixel electrode layer, and the photoresist layer filling the first via hole which is covered with the pixel electrode layer; wherein the step of forming a pixel electrode layer on the surface of the planarization layer away from the substrate comprises; forming a common electrode layer on the planarization layer; and forming a passivation layer on the common electrode layer, such that the passivation layer covers the common electrode layer, wherein the passivation layer has a part extending into the first via hole formed in the planarization, the first via hole being delimited by a sidewall that is formed of a part of the planarization layer, wherein the part of the passivation layer that extends into the first via hole covers the sidewall of the first via hole and directly contacts the part of the planarization layer that defines the sidewall; wherein the pixel electrode layer is formed on the passivation layer and covers the passivation layer, and the pixel electrode is in contact with the drain electrode through the first via hole; wherein after the step of forming a photoresist layer on the pixel electrode layer, the method further comprises forming a photoresist column on the photoresist layer; and wherein the photoresist layer has a planar top surface that is distant from the pixel electrode layer, the planar top surface being extended to completely cover the thin-film transistor and also extended such that the photoresist column is formed on and integrally connected with the planar top surface of the photoresist layer. - View Dependent Claims (10)
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Specification