Solid-state imaging device and imaging apparatus
First Claim
Patent Images
1. A solid-state imaging device comprising:
- a first substrate having a first principal surface, a second principal surface, and a plurality of first photoelectric conversion elements, the first principal surface and the second principal surface facing in opposite directions, the plurality of first photoelectric conversion elements being disposed in a matrix form;
a second substrate having a third principal surface, a fourth principal surface, one or more first layers, and a plurality of first through electrodes, the third principal surface and the fourth principal surface facing in opposite directions, the third principal surface facing the second principal surface, the plurality of first through electrodes penetrating at least one of the first layers; and
a third substrate having a fifth principal surface and a sixth principal surface, the fifth principal surface and the sixth principal surface facing in opposite directions, the fifth principal surface facing the fourth principal surface,wherein the plurality of first photoelectric conversion elements are disposed in a pixel area,the plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area,the first substrate and the second substrate are electrically connected to each other,the second substrate comprises;
a first memory circuit disposed in the first area and configured to temporarily store signals output from the plurality of first photoelectric conversion elements;
a processing circuit disposed in the first area and configured to process the signals stored in the first memory circuit; and
a scanning circuit disposed in the second area and configured to control the plurality of first photoelectric conversion elements, the first memory circuit, and the processing circuit,the third substrate comprises;
a second memory circuit connected to the scanning circuit by the plurality of first through electrodes and configured to store the signals processed by the processing circuit,the solid-state imaging device further comprises a plurality of microbumps disposed between the second principal surface and the third principal surface, andeach microbump included in the plurality of microbumps is disposed for each first photoelectric conversion element included in the plurality of first photoelectric conversion elements and electrically connects the first photoelectric conversion element and the first memory circuit to each other.
1 Assignment
0 Petitions
Accused Products
Abstract
A solid-state imaging device has a first substrate, a second substrate, and a third substrate. The first substrate has a plurality of first photoelectric conversion elements. The second substrate has a plurality of first through electrodes. The plurality of first photoelectric conversion elements are disposed in a pixel area. The plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area.
-
Citations
6 Claims
-
1. A solid-state imaging device comprising:
-
a first substrate having a first principal surface, a second principal surface, and a plurality of first photoelectric conversion elements, the first principal surface and the second principal surface facing in opposite directions, the plurality of first photoelectric conversion elements being disposed in a matrix form; a second substrate having a third principal surface, a fourth principal surface, one or more first layers, and a plurality of first through electrodes, the third principal surface and the fourth principal surface facing in opposite directions, the third principal surface facing the second principal surface, the plurality of first through electrodes penetrating at least one of the first layers; and a third substrate having a fifth principal surface and a sixth principal surface, the fifth principal surface and the sixth principal surface facing in opposite directions, the fifth principal surface facing the fourth principal surface, wherein the plurality of first photoelectric conversion elements are disposed in a pixel area, the plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area, the first substrate and the second substrate are electrically connected to each other, the second substrate comprises; a first memory circuit disposed in the first area and configured to temporarily store signals output from the plurality of first photoelectric conversion elements; a processing circuit disposed in the first area and configured to process the signals stored in the first memory circuit; and a scanning circuit disposed in the second area and configured to control the plurality of first photoelectric conversion elements, the first memory circuit, and the processing circuit, the third substrate comprises; a second memory circuit connected to the scanning circuit by the plurality of first through electrodes and configured to store the signals processed by the processing circuit, the solid-state imaging device further comprises a plurality of microbumps disposed between the second principal surface and the third principal surface, and each microbump included in the plurality of microbumps is disposed for each first photoelectric conversion element included in the plurality of first photoelectric conversion elements and electrically connects the first photoelectric conversion element and the first memory circuit to each other. - View Dependent Claims (2, 3, 4)
-
-
5. A solid-state imaging device comprising:
-
a first substrate having a first principal surface, a second principal surface, and a plurality of first photoelectric conversion elements, the first principal surface and the second principal surface facing in opposite directions, the plurality of first photoelectric conversion elements being disposed in a matrix form; a second substrate having a third principal surface, a fourth principal surface, one or more first layers, and a plurality of first through electrodes, the third principal surface and the fourth principal surface facing in opposite directions, the third principal surface facing the second principal surface, the plurality of first through electrodes penetrating at least one of the first layers; and a third substrate having a fifth principal surface and a sixth principal surface, the fifth principal surface and the sixth principal surface facing in opposite directions, the fifth principal surface facing the fourth principal surface, wherein the plurality of first photoelectric conversion elements are disposed in a pixel area, the plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area, the first substrate and the second substrate are electrically connected to each other, the second substrate comprises; a first memory circuit disposed in the first area and configured to temporarily store signals output from the plurality of first photoelectric conversion elements; a processing circuit disposed in the first area and configured to process the signals stored in the first memory circuit; and a scanning circuit disposed in the second area and configured to control the plurality of first photoelectric conversion elements, the first memory circuit, and the processing circuit, the third substrate comprises; a second memory circuit connected to the scanning circuit by the plurality of first through electrodes and configured to store the signals processed by the processing circuit, the second substrate includes a plurality of processing circuits including the processing circuit, each processing circuit included in the plurality of processing circuits is disposed for each column in an arrangement of the plurality of first photoelectric conversion elements, and each processing circuit included in the plurality of processing circuits processes the signals output from the first photoelectric conversion element corresponding to the column and stored in the first memory circuit.
-
-
6. A solid-state imaging device comprising:
-
a first substrate having a first principal surface, a second principal surface, and a plurality of first photoelectric conversion elements, the first principal surface and the second principal surface facing in opposite directions, the plurality of first photoelectric conversion elements being disposed in a matrix form; a second substrate having a third principal surface, a fourth principal surface, one or more first layers, and a plurality of first through electrodes, the third principal surface and the fourth principal surface facing in opposite directions, the third principal surface facing the second principal surface, the plurality of first through electrodes penetrating at least one of the first layers; and a third substrate having a fifth principal surface and a sixth principal surface, the fifth principal surface and the sixth principal surface facing in opposite directions, the fifth principal surface facing the fourth principal surface, wherein the plurality of first photoelectric conversion elements are disposed in a pixel area, the plurality of first through electrodes are disposed only in a second area around a first area corresponding to the pixel area, the first substrate and the second substrate are electrically connected to each other, the second substrate comprises; a first memory circuit disposed in the first area and configured to temporarily store signals output from the plurality of first photoelectric conversion elements; a processing circuit disposed in the first area and configured to process the signals stored in the first memory circuit; and a scanning circuit disposed in the second area and configured to control the plurality of first photoelectric conversion elements, the first memory circuit, and the processing circuit, the third substrate comprises; a second memory circuit connected to the scanning circuit by the plurality of first through electrodes and configured to store the signals processed by the processing circuit, the second substrate further includes at least one of a reading circuit and a plurality of second photoelectric conversion elements, the reading circuit is configured to read the signals from the plurality of first photoelectric conversion elements, and at least one of the reading circuit and the plurality of second photoelectric conversion elements is disposed in the first area.
-
Specification