Image sensor including a plurality of pixel regions and an isolation region including device isolation structures

• US 10,644,072 B2
• Filed: 10/13/2017
• Issued: 05/05/2020
• Est. Priority Date: 05/10/2017
• Status: Active Grant

• Current Assignee: Samsung Electronics Co. Ltd.
• Original Assignee: Samsung Electronics Co. Ltd.
• Inventors: Lee, Gwi-deok Ryan, Lee, Kwang-min, Lee, Tae-yon, Ishii, Masaru
• Primary Examiner(s): Le, Thao X
• Assistant Examiner(s): Cross, Xia L
• Application Number:
  US15/783,000
• Publication Number:
  US 20180331159A1
• Time in Patent Office: 935 Days
• CPC Class Codes: H10K 30/82 Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
• CPC Class Codes: H10K 39/32 Organic image sensors

Abstract

Provided is an image sensor including an organic photoelectric layer capable of enhancing color reproduction. An image sensor includes a semiconductor substrate including a plurality of pixel regions spaced apart from each other and an isolation region therebetween. Each of the plurality of pixel regions has a unit pixel. The image sensor also includes a device isolation layer in the isolation region and surrounding the unit pixel, a first transparent electrode layer, an organic photoelectric layer, and a second transparent electrode layer. The image sensor further includes a via plug electrically connected to the first transparent electrode layer, and arranged between the device isolation layers in the isolation region. The via plug passes through the isolation region. The first transparent electrode layer, the organic photoelectric layer and the second transparent electrode layer are sequentially arranged over the semiconductor substrate.

Claims

1. An image sensor, comprising:

a semiconductor substrate comprising a plurality of pixel regions spaced apart from each other and an isolation region surrounding each of the plurality of pixel regions, the plurality of pixel regions having a plurality of unit pixels;

a plurality of device isolation structures, each of the plurality of device isolation structures being disposed in the isolation region and extending from a bottom surface of the semiconductor substrate to a top surface of the semiconductor substrate, the bottom surface being opposite the top surface;

a first transparent electrode layer disposed over the semiconductor substrate;

an organic photoelectric layer disposed on the first transparent electrode layer;

a second transparent electrode layer disposed on the organic photoelectric layer;

a via plug electrically connected to the first transparent electrode layer, and arranged between adjacent device isolation structures among the plurality of device isolation structures, the via plug passing through the isolation region; and

a side surface insulating layer contacting a side surface of the via plug and arranged between the adjacent device isolation structures and the via plug,

wherein each of the plurality of device isolation structures comprises a core isolation layer formed of a metal or a semiconductor material, and a cover isolation layer covering a side wall of the core isolation layer and formed of an insulation material,

wherein the cover isolation layer is disposed between the side surface insulating layer and the core isolation layer, and

wherein each of the plurality of device isolation structures surrounds at least three sides of a unit pixel of the plurality of unit pixels.

2. The image sensor of claim 1, wherein, between two adjacent unit pixels among the plurality of unit pixels, a width of a penetrating via structure including the via plug and the side surface insulating layer is equal to or greater than a width of each of the plurality of device isolation-structures.

3. The image sensor of claim 1, further comprising a semiconductor layer arranged between the side surface insulating layer and the core isolation layer, and formed of the same material as the semiconductor substrate.

4. The image sensor of claim 1, further comprising a semiconductor layer arranged between the side surface insulating layer and one of the plurality of device isolation structures, and formed of the same material as the semiconductor substrate.

5. The image sensor of claim 1,

wherein the via plug is located between two adjacent unit pixels among the plurality of unit pixels, and

wherein a width of the via plug is less than a width of one of the plurality of device isolation structures.

6. The image sensor of claim 1,

wherein the first transparent electrode layer is configured as a plurality of parts spaced apart from each other and arranged in the plurality of pixel regions, and

wherein the second transparent electrode layer is configured as an integral part over the plurality of pixel regions.

7. An image sensor, comprising:

a semiconductor substrate comprising a plurality of pixel regions spaced apart from each other and an isolation region surrounding each of the plurality of pixel regions, the plurality of pixel regions having a plurality of unit pixels;

a plurality of device isolation structures, each of the plurality of device isolation structures being disposed in the isolation region and extending from a bottom surface of the semiconductor substrate to a top surface of the semiconductor substrate, the bottom surface being opposite the top surface;

a first transparent electrode layer disposed over the semiconductor substrate;

an organic photoelectric layer disposed on the first transparent electrode layer;

a second transparent electrode layer disposed on the organic photoelectric layer;

a via plug electrically connected to the first transparent electrode layer, and arranged between adjacent device isolation structures among the plurality of device isolation structures, the via plug passing through the isolation region;

a side surface insulating layer contacting a side surface of the via plug and arranged between the adjacent device isolation structures and the via plug; and

a semiconductor layer arranged between the side surface insulating layer and one of the adjacent device isolation structures, and formed of the same material as the semiconductor substrate,

wherein each of the plurality of device isolation structures surrounds at least three sides of a unit pixel of the plurality of unit pixels.

8. The image sensor of claim 7, wherein the side surface insulating layer extends from the bottom surface of the semiconductor substrate to the top surface of the semiconductor substrate.