Layered structure and semiconductor device including layered structure

• US 10,644,115 B2
• Filed: 02/25/2019
• Issued: 05/05/2020
• Est. Priority Date: 02/28/2018
• Status: Active Grant

• Current Assignee: Filosofia Inc.
• Original Assignee: Filosofia Inc.
• Inventors: Oshima, Takayoshi, Shinohe, Takashi, Takahashi, Isao
• Primary Examiner(s): Nguyen, Dao H
• Application Number:
  US16/284,302
• Publication Number:
  US 20190267450A1
• Time in Patent Office: 435 Days
• Field of Search: 257 13, 257 15, 257 43, 257 76, 257103, 257104, 257189, 257267, 257352, 257628, 257E33023, 257E21121, 257E21122, 257E21256, 257E21564, 438 43, 438 48, 438104, 438404, 438413, 438478, 438479
• CPC Class Codes: H01L 21/0228 deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
• CPC Class Codes: H01L 21/02483 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02507 Alternating layers, e.g. superlattice
• CPC Class Codes: H01L 21/02516 Crystal orientation
• CPC Class Codes: H01L 21/02565 Oxide semiconducting materials not being Group 12/16 materials, e.g. ternary compounds
• CPC Class Codes: H01L 21/02609 Crystal orientation
• CPC Class Codes: H01L 29/04 characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes characterised by physical imperfections H01L29/30
• CPC Class Codes: H01L 29/155 Comprising only semiconductor materials H01L29/154 takes precedence
• CPC Class Codes: H01L 29/78687 with a multilayer structure or superlattice structure
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

In a first aspect of a present inventive subject matter, a layered structure includes a base layer, and a crystalline oxide film including a corundum structure and including an r-plane as a principal plane. The crystalline oxide film is directly arranged on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film is with a full width at half maximum (FWHM) of rocking curve that is 0.1° or less by ω-scan X-ray diffraction (XRD) measurement.

Claims

1. A layered structure comprising:

a base layer; and

a crystalline oxide film comprising a corundum structure and comprising an r-plane as a principal plane, the crystalline oxide film directly on the base layer or through at least one layer that is adjacently arranged to the base layer, and the crystalline oxide film with a full width at half maximum (FWHM) of rocking curve that is 0.1°

or less by ω

-scan X-ray diffraction (XRD) measurement.

2. The layered structure of claim 1, wherein

the crystalline oxide film is a coherent layer that is coherently grown from the base layer or coherently grown from the at least one layer that is adjacently arranged to the base layer.

3. The layered structure of claim 1, wherein

the crystalline oxide film is a semiconductor film.

4. The layered structure of claim 1, wherein

the crystalline oxide film comprises gallium oxide as a major component.

5. The layered structure of claim 1, wherein

the crystalline oxide film comprises as a major component a mixed crystal comprising gallium oxide.

6. The layered structure of claim 1, wherein

the at least one layer that is adjacently arranged to the base layer comprises a crystalline oxide film comprising aluminum oxide as a major component.

7. The layered structure of claim 6,

wherein the first composition of the first layer is a crystalline oxide comprising gallium oxide as a major component.

8. The layered structure of claim 7,

the crystalline oxide film is with electrical resistivity that is 0.1 Ω

cm or less.

9. The layered structure of claim 6,

wherein the first composition of the first layer is a crystalline oxide comprising as a major component a mixed crystal that comprises gallium oxide.

10. The layered structure of claim 6,

wherein the second composition of the second layer is a crystalline oxide comprising aluminum oxide as a major component.

11. The layered structure of claim 6,

wherein the second composition of the second layer is a crystalline oxide comprising as a major component a mixed crystal comprising aluminum oxide.

12. The layered structure of claim 1, wherein

the at least one layer that is adjacently arranged to the base layer comprises a crystalline oxide film comprising as a major component a mixed crystal comprising aluminum oxide.

13. A semiconductor device comprising:

the layered structure of claim 1 comprising a first side and a second side that is an opposite side of the first side;

a first electrode positioned at the first side of the layered structure; and

a second electrode positioned at the first side of the layered structure and spaced from the first electrode.

14. A layered structure comprising:

a first layer with a first composition, the first layer comprising a corundum structure and an r-plane as a principal plane;

a second layer with a second composition that is different from the first composition; and

two or more layers as the first layer and two or more layers as the second layer being alternately stacked to form a superlattice,

the two or more layers comprising a crystalline oxide film that comprises a full width at half maximum (FWHM) of rocking curve that is 0.1°

or less by ω

-scan X-ray diffraction (XRD) measurement.

15. A crystalline oxide semiconductor film comprising:

at least one crystalline oxide semiconductor selected from a crystalline oxide semiconductor comprising gallium oxide as a major component and a crystalline oxide semiconductor comprising as a major component a mixed crystal comprising gallium oxide with a corundum structure,

the crystalline oxide semiconductor film is an r-plane crystalline oxide semiconductor film with a full width at half maximum (FWHM) of rocking curve that is 0.1°

or less by ω

-scan X-ray diffraction (XRD) measurement.

16. The crystalline oxide semiconductor film of claim 15, wherein

the crystalline oxide semiconductor film is without a crystal dislocation.

17. The crystalline oxide semiconductor film of claim 15, wherein

the crystalline oxide semiconductor film is with electrical resistivity that is 0.1 Ω

cm or less.

18. The crystalline oxide semiconductor film of claim 15, wherein

the crystalline oxide semiconductor film is with electrical resistivity that is in a range of 0.01 Ω

cm to 0.07 Ω

cm.

19. A semiconductor device comprising:

the crystalline oxide semiconductor film of claim 15 comprising a first side and a second side that is an opposite side of the first side;

a first electrode positioned at the first side of the crystalline oxide semiconductor film; and

a second electrode positioned at the second side of the crystalline oxide semiconductor film.

20. A system comprising:

a circuit board; and

the semiconductor device of claim 19 electrically connected to the circuit board.