Thin film transistor, GOA circuit, display substrate and display device

• US 10,644,120 B2
• Filed: 04/18/2017
• Issued: 05/05/2020
• Est. Priority Date: 09/28/2016
• Status: Active Grant

• Current Assignee: BOE Technology Group Co., Ltd., Hefei Xinsheng Optoelectric Technology Co. Ltd. (BOE Technology Group Co., Ltd.)
• Original Assignee: BOE Technology Group Co., Ltd.
• Inventors: He, Wei, Zhang, Xinjie, Xiao, Wenlong, Wu, Siquan
• Primary Examiner(s): Cao, Phat X
• Application Number:
  US15/735,938
• Publication Number:
  US 20190006477A1
• Time in Patent Office: 1,113 Days
• CPC Class Codes: G02F 1/136259 Repairing; Defects
• CPC Class Codes: G02F 1/136268 Switch defects
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2201/506 Repairing, e.g. with redundant arrangement against defective part
• CPC Class Codes: H01L 21/76894 using a laser, e.g. laser cutting, laser direct writing, laser repair
• CPC Class Codes: H01L 27/124 with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits wiring structures per se H01L23/52
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/42384 for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
• CPC Class Codes: H01L 29/66765 Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
• CPC Class Codes: H01L 29/786 Thin film transistors, i.e. transistors with a channel being at least partly a thin film transistors having only the source or the drain region on an insulator layer H01L29/0653; thin film FinFETs H01L29/785
• CPC Class Codes: H01L 29/78696 characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel H01L29/78612 takes precedence; transistors having a drain offset region or a lightly doped drain [LDD] H01L29/78621
• CPC Class Codes: H10K 59/12 Active-matrix OLED [AMOLED] displays
• CPC Class Codes: H10K 59/131 Interconnections, e.g. wiring lines or terminals

Abstract

A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.

Claims

1. A thin film transistor, comprising a first electrode, a second electrode, and a third electrode, wherein the first and second electrodes are arranged in a same layer and are insulated from each other, the third electrode is arranged below and insulated from the first and second electrodes,

wherein the first electrode comprises one first conducting part;

the second electrode comprises two second conducting parts, and each of the second conducting parts is arranged adjacent with the first conducting part; and

the third electrode is provided with an opening part, and the opening part at least partially overlaps with each second conducting part of the second electrode,

wherein the third electrode is a gate line, and the gate line forms a gate electrode of the thin film transistor at a portion where the gate line overlaps with the first electrode and the second electrode,

wherein the opening part does not overlap with the first electrode,

wherein the opening part is arranged at a side of the gate line away from the gate electrode and is flush with an edge of the gate line, and

wherein in a direction perpendicular to an extending direction of the gate line, the gate line has a width, which is larger than a width of the gate electrode, and equals to a sum of the width of the gate electrode and a sum of the opening part.

2. The thin film transistor of claim 1, wherein

the opening part is arranged on an end region of the third electrode in an extending direction of the first conducting part or the second conducting parts.

3. The thin film transistor of claim 1, wherein

the opening part has a strip shape;

and

the opening part extends in a direction perpendicular with the extending direction of the first conducting part or the second conducting parts.

4. The thin film transistor of claim 3, wherein

the opening part is rectangular or elliptic.

5. The thin film transistor of claim 1, wherein

the first conducting part and the second conducting parts have a linear shape.

6. The thin film transistor of claim 1, wherein

the first conducting part and the second conducting parts have a non-linear shape;

and

the second conducting parts are arranged to surround the first conducting part.

7. The thin film transistor of claim 1, wherein

the second electrode further comprises a second electrode line for electrically connecting the second conducting parts.

8. The thin film transistor of claim 7, wherein

the second electrode further comprises a second connection part for electrically connecting the second conducting parts to the second electrode line;

and

an orthographic projection of the second electrode line and the second connection part falls within an orthographic projection of the third electrode.

9. The thin film transistor of claim 7, wherein

an orthographic projection of the second electrode line falls within an orthographic projection of the third electrode.

10. The thin film transistor of claim 7, wherein

the first electrode further comprises a first electrode line for electrically connecting the first conducting part.

11. The thin film transistor of claim 10, wherein

the first and second electrodes have a comb shape.

12. The thin film transistor of claim 1, wherein

one of the first and second electrodes is a source electrode, and the other is a drain electrode.

13. A GOA (Gate On Array) circuit, comprising the thin film transistor of claim 1.

14. A display substrate, comprising the thin film transistor of claim 1, wherein the first electrode is electrically connected to a pixel electrode of each pixel, the second electrode is electrically connected to a data line.

15. A display device, comprising the display substrate of claim 14.

16. The thin film transistor of claim 1, wherein

the thin film transistor further comprises a semiconductor layer, which is arranged between the first and second electrodes and the third electrode;

and

an orthographic projection of the semiconductor layer coincides with an orthographic projection of the third electrode.