Thin film transistor, GOA circuit, display substrate and display device
First Claim
1. A thin film transistor, comprising a first electrode, a second electrode, and a third electrode, wherein the first and second electrodes are arranged in a same layer and are insulated from each other, the third electrode is arranged below and insulated from the first and second electrodes,wherein the first electrode comprises one first conducting part;
- the second electrode comprises two second conducting parts, and each of the second conducting parts is arranged adjacent with the first conducting part; and
the third electrode is provided with an opening part, and the opening part at least partially overlaps with each second conducting part of the second electrode,wherein the third electrode is a gate line, and the gate line forms a gate electrode of the thin film transistor at a portion where the gate line overlaps with the first electrode and the second electrode,wherein the opening part does not overlap with the first electrode,wherein the opening part is arranged at a side of the gate line away from the gate electrode and is flush with an edge of the gate line, andwherein in a direction perpendicular to an extending direction of the gate line, the gate line has a width, which is larger than a width of the gate electrode, and equals to a sum of the width of the gate electrode and a sum of the opening part.
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Accused Products
Abstract
A thin film transistor is disclosed, comprising a first, second and third electrode. The first and second electrodes are arranged in a same layer and insulated from each other. The third electrode is arranged below and insulated from the first and second electrodes. The first electrode comprises at least one first conducting part. The second electrode comprises second conducting parts, each of which is arranged adjacent with each first conducting part. The third electrode is provided with an opening part at least partially overlapping with the first or second conducting part. If the first or second conducting part is subject to a channel defect due to short circuit, the first or second conducting part is cut off at an overlapping position with the opening part, to repair the channel defect without affecting the third electrode. A GOA circuit, a display substrate and a display device are further disclosed.
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Citations
16 Claims
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1. A thin film transistor, comprising a first electrode, a second electrode, and a third electrode, wherein the first and second electrodes are arranged in a same layer and are insulated from each other, the third electrode is arranged below and insulated from the first and second electrodes,
wherein the first electrode comprises one first conducting part; -
the second electrode comprises two second conducting parts, and each of the second conducting parts is arranged adjacent with the first conducting part; and the third electrode is provided with an opening part, and the opening part at least partially overlaps with each second conducting part of the second electrode, wherein the third electrode is a gate line, and the gate line forms a gate electrode of the thin film transistor at a portion where the gate line overlaps with the first electrode and the second electrode, wherein the opening part does not overlap with the first electrode, wherein the opening part is arranged at a side of the gate line away from the gate electrode and is flush with an edge of the gate line, and wherein in a direction perpendicular to an extending direction of the gate line, the gate line has a width, which is larger than a width of the gate electrode, and equals to a sum of the width of the gate electrode and a sum of the opening part. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification