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Vertical bi-directional switches and method for making same

  • US 10,644,146 B1
  • Filed: 11/13/2018
  • Issued: 05/05/2020
  • Est. Priority Date: 11/13/2018
  • Status: Active Grant
First Claim
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1. A vertical bi-directional device comprising:

  • a substrate;

    a semiconductor layer over the substrate;

    a first conductive gate in the semiconductor layer, recessed from a top surface of the semiconductor layer;

    a first gate oxide on a first sidewall and a bottom surface of the first conductive gate, wherein the first sidewall of the first conductive gate is perpendicular to a major surface of the substrate;

    a second conductive gate in the semiconductor layer, recessed from the top surface of the semiconductor layer;

    a second gate oxide on a first sidewall and a bottom surface of the second conductive gate, wherein the first sidewall of the second conductive gate is perpendicular to the major surface of the substrate;

    a first insulator over a top surface of the first conductive gate, wherein the top surface of the first conductive gate is opposite the bottom surface of the first conductive gate;

    a second insulator on a top surface of the second conductive gate, wherein the top surface of the second conductive gate is opposite the bottom surface of the second conductive gatea first heavily doped region of a first conductivity type at a surface of the semiconductor layer, adjacent the first insulator;

    a second heavily doped region of the first conductivity type at the surface of the semiconductor layer, adjacent the second insulator;

    a first doped region of the first conductivity type under the first conductive gate, extending from the first gate oxide on the bottom surface of the first conductive gate towards the substrate;

    a second doped region of the first conductivity type under the second conductive gate, extending from the second gate oxide on the bottom surface of the second conductive gate towards the substrate;

    a first doped region of a second conductivity type, opposite the first conductivity type, under the top surfaces of the first and second conductive gates and extending laterally from the first gate oxide on the first sidewall of the first conductive gate to the second gate oxide on the first sidewall of the second conductive gate; and

    a heavily doped region of the second conductivity type at the surface of the semiconductor layer, wherein the heavily doped region of the second conductivity type is laterally between the first and second heavily doped regions of the first conductivity type at the surface of the semiconductor layer.

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