Buried-channel low noise transistors and methods of making such devices

• US 10,644,152 B1
• Filed: 01/28/2019
• Issued: 05/05/2020
• Est. Priority Date: 01/28/2019
• Status: Active Grant

• Current Assignee: Globalfoundries US Incorporated (GlobalFoundries, Inc.)
• Original Assignee: GlobalFoundries, Inc.
• Inventors: Zaka, Alban, Pirro, Luca, Herrmann, Tom, Bazizi, El Mehdi, Hoentschel, Jan
• Primary Examiner(s): Ho, Anthony
• Application Number:
  US16/258,857
• Time in Patent Office: 463 Days
• CPC Class Codes: H01L 29/1033 with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with channel and gate aligned in the lengthwise direction H01L29/42376; with buried channel H01L29/7838
• CPC Class Codes: H01L 29/66772 Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates H01L29/66666 takes precedence; thin film FinFETs H01L29/66795
• CPC Class Codes: H01L 29/7838 without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
• CPC Class Codes: H01L 29/78606 with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device H01L29/78642, H01L29/78645 take precedence
• CPC Class Codes: H01L 29/78654 Monocrystalline silicon transistors

Abstract

One illustrative integrated circuit product disclosed herein includes at least one transistor formed on an active region of on an SOI substrate, the transistor comprising a gate that includes a gate structure, first and second source/drain regions positioned on opposite sides of the gate, the first and second source/drain regions comprising doped epitaxial semiconductor material that is doped with a dopant material of a first type, and a doped region positioned below the gate, wherein the doped region has a lateral width that is at least substantially equal to the CPP (contact-poly-pitch) dimension of the transistor and is doped with a dopant material of the first type, wherein a first portion of the doped region is positioned vertically above an interface between the active region and a buried insulation layer of the SOI substrate and a second portion of the doped region is positioned vertically below the interface.

Claims

1. An integrated circuit product, comprising:

a base semiconductor substrate;

a buried insulation layer positioned above said base semiconductor layer;

an active region positioned above said buried insulation layer;

at least one active transistor positioned in said active region, said at least one active transistor comprising;

a gate that comprises a gate structure;

first and second source/drain regions positioned on opposite sides of said gate, said first and second source/drain regions comprising doped epitaxial semiconductor material that is doped with a dopant material of a first type;

a gate length that extends in a gate length direction; and

a contact-poly-pitch (CPP) dimension that extends in said gate length direction; and

a doped region positioned below said gate, said doped region having a lateral width in said gate length direction that is at least substantially equal to said CPP dimension, said doped region being doped with a dopant material of said first type, wherein a first portion of said doped region is positioned vertically above an interface between said active region and said buried insulation layer and a second portion of said doped region is positioned vertically below said interface.

2. The integrated circuit product of claim 1, wherein said gate further comprises:

a gate cap positioned above said gate structure; and

at least one sidewall spacer positioned adjacent opposing sidewalls of said gate structure, wherein each of said first and second source/drain regions has a lateral midpoint and wherein said CPP dimension is substantially equal to a distance between said lateral midpoints of said first and second source/drain regions.

3. The integrated circuit product of claim 1, wherein said active region is substantially free of doped regions other than said first portion of said doped region.

4. The integrated circuit product of claim 1, wherein said lateral width of said doped region is substantially equal to said CPP dimension.

5. The integrated circuit product of claim 1, wherein said active region has a lateral width in said gate length direction and wherein said lateral width of said doped region is at least approximately equal to said lateral width of said active region.

6. The integrated circuit product of claim 1, wherein a vertical location of peak dopant concentration of said doped region is positioned at approximately said interface.

7. The integrated circuit product of claim 1, wherein said doped epitaxial semiconductor material is doped with a first dopant species of said first type and said doped region is doped with a second dopant species of said first type, wherein said first and second dopant species are different.

8. The integrated circuit product of claim 1, wherein said at least one active transistor is a planar transistor device and wherein said gate structure comprises a gate insulation layer that comprises at least one of silicon dioxide or a high-k (k value greater than 10) insulation material and a gate electrode structure that comprises at least one of polysilicon, a metal, titanium nitride, aluminum or tantalum, and wherein said doped epitaxial semiconductor material has an upper surface that is positioned at a level that is above a level of an upper surface of said active layer.

9. The integrated circuit product of claim 1, wherein said at least one active transistor is a PFET transistor and said first dopant type is P-type dopant.

10. The integrated circuit product of claim 1, wherein said at least one active transistor consists of a single active transistor, wherein said active region has a lateral width in said gate length direction, and wherein said lateral width of said doped region is less than said lateral width of said active region.

11. The integrated circuit product of claim 10, wherein a lateral midpoint of said doped region is in substantial vertical alignment with a lateral midpoint of said gate of said single active transistor.

12. The integrated circuit product of claim 10, wherein said lateral width of said doped region is at least substantially equal to said CPP dimension.

13. The integrated circuit product of claim 1, wherein said at least one active transistor consists of a single active transistor, wherein said active region has a lateral width in said gate length direction, and wherein said lateral width of said doped region is at least approximately equal to said lateral width of said active region.

14. The integrated circuit product of claim 1, wherein said at least one active transistor comprises a plurality of active transistors that are all of a same type, wherein said integrated circuit product comprises a plurality of laterally spaced-apart doped regions, each of said doped regions being positioned below said gate of a corresponding one of said plurality of active transistors, wherein a lateral midpoint of each of said doped regions is in substantial vertical alignment with a lateral midpoint of said gate of said corresponding active transistor that is positioned above said doped region.

15. The integrated circuit product of claim 14, further comprising a lateral space in said active regions between adjacent laterally-spaced apart doped regions, said lateral space being substantially free of dopant material.

16. The integrated circuit product of claim 15, wherein a lateral width of each of said plurality of doped regions is at least substantially equal to said CPP dimension.

17. The integrated circuit product of claim 1, wherein said at least one active transistor comprises a plurality of active transistors that are all of a same type, wherein said active region has a lateral width in said gate length direction, and wherein said lateral width of said doped region is at least approximately equal to said lateral width of said active region.

18. An integrated circuit product, comprising:

a base semiconductor substrate;

a buried insulation layer positioned above said base semiconductor layer;

an active region positioned above said buried insulation layer;

a transistor positioned in said active region, said transistor comprising;

a gate that comprises a gate structure;

first and second source/drain regions positioned on opposite sides of said gate, said first and second source/drain regions comprising doped epitaxial semiconductor material that is doped with a dopant material of a first type;

a gate length that extends in a gate length direction, wherein said active region has a lateral width in said gate length direction; and

a contact-poly-pitch (CPP) dimension that extends in said gate length direction; and

a doped region positioned below said gate, said doped region having a lateral width in said gate length direction that is at least substantially equal to said CPP dimension but less than said lateral width of said active region, said doped region being doped with a dopant material of said first type, wherein a first portion of said doped region is positioned vertically above an interface between said active region and said buried insulation layer and a second portion of said doped region is positioned vertically below said interface, wherein a lateral midpoint of said doped region is in substantial vertical alignment with a lateral midpoint of said gate of said transistor.

19. The integrated circuit product of claim 18, wherein said transistor is a planar transistor device and wherein said gate structure comprises a gate insulation layer that comprises at least one of silicon dioxide or a high-k (k value greater than 10) insulation material and a gate electrode structure that comprises at least one of polysilicon, a metal, titanium nitride, aluminum or tantalum.

20. The integrated circuit product of claim 18, wherein said active region is substantially free of doped regions other than said first portion of said doped region and wherein a vertical location of peak dopant concentration of said doped region is positioned at approximately said interface.