Method for manufacturing an array substrate, display panel and display device
First Claim
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1. A method for manufacturing an array substrate, comprising:
- forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate;
forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer;
performing helium plasma bombardment to the portions of the semiconductor layer exposed in the via holes for 30 to 40 seconds;
forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator,wherein a material of the semiconductor layer comprises amorphous InGaZnO, and an oxygen content of the amorphous InGaZnO is not greater than 10%.
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Abstract
A method for manufacturing an array substrate, a display panel and a display device are provided. The method includes forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate; forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer; performing plasma bombardment to the portions of the semiconductor layer exposed in the via holes; forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator.
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15 Claims
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1. A method for manufacturing an array substrate, comprising:
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forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate; forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer; performing helium plasma bombardment to the portions of the semiconductor layer exposed in the via holes for 30 to 40 seconds; forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator, wherein a material of the semiconductor layer comprises amorphous InGaZnO, and an oxygen content of the amorphous InGaZnO is not greater than 10%. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15)
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