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Method for manufacturing an array substrate, display panel and display device

  • US 10,644,162 B2
  • Filed: 08/10/2017
  • Issued: 05/05/2020
  • Est. Priority Date: 08/19/2016
  • Status: Active Grant
First Claim
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1. A method for manufacturing an array substrate, comprising:

  • forming a semiconductor layer, a gate insulating layer, a gate and an inter-layer insulator successively on a base substrate;

    forming via holes in the inter-layer insulator so as to expose portions of the semiconductor layer;

    performing helium plasma bombardment to the portions of the semiconductor layer exposed in the via holes for 30 to 40 seconds;

    forming a source electrode and a drain electrode coupled with the semiconductor layer through the via holes respectively on the inter-layer insulator,wherein a material of the semiconductor layer comprises amorphous InGaZnO, and an oxygen content of the amorphous InGaZnO is not greater than 10%.

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