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Type IV semiconductor based high voltage laterally stacked multijunction photovoltaic cell

  • US 10,644,184 B2
  • Filed: 01/19/2018
  • Issued: 05/05/2020
  • Est. Priority Date: 10/05/2016
  • Status: Active Grant
First Claim
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1. A photovoltaic device comprising:

  • a semiconductor on insulator (SOI) substrate;

    n-type doped regions extending from an upper surface of the semiconductor layer of the SOI substrate to a buried oxide layer of the SOI substrate in a first plurality of regions in the SOI substrate;

    p-type doped regions extending from the upper surface of the semiconductor layer of the SOI layer to a buried oxide layer on the SOI substrate in a second plurality of regions in the SOI substrate, where one of each of the first and second plurality are adjacent to one another to provide a plurality of P-N junctions; and

    intrinsic semiconductor between the first and second plurality of regions in the SOI substrate separating adjacent P-N junctions to provide P-I-N cells that are horizontally oriented, wherein the n-type doped regions are paired in direct contact with the p-type doped regions to provide the plurality of p-n junctions.

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