Vertical topology light emitting device
First Claim
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1. A vertical topology light emitting device, comprising:
- a conductive support structure;
an adhesion layer disposed on the conductive support structure;
a p-type contact disposed on the adhesion layer;
a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface;
an interface layer on the GaN-based semiconductor structure; and
a contact pad disposed on the interface layer,wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer, andwherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.
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Abstract
A vertical topology light emitting device can include a conductive support structure; an adhesion layer disposed on the conductive support structure; a p-type contact disposed on the adhesion layer; a GaN-based semiconductor structure disposed on the p-type contact, in which the GaN-based semiconductor structure includes an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, in which the n-type GaN-based layer has an etched flat surface, and the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface; an interface layer on the GaN-based semiconductor structure; and a contact pad disposed on the interface layer, in which the interface layer includes a portion which directly contacts the etched flat surface of the n-type GaN-based layer, and a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure.
133 Citations
20 Claims
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1. A vertical topology light emitting device, comprising:
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a conductive support structure; an adhesion layer disposed on the conductive support structure; a p-type contact disposed on the adhesion layer; a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface; an interface layer on the GaN-based semiconductor structure; and a contact pad disposed on the interface layer, wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer, and wherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A vertical topology light emitting device, comprising:
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a conductive support structure; an adhesion layer disposed on the conductive support structure; a p-type contact disposed on the adhesion layer; a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface; an interface layer on the GaN-based semiconductor structure; and a contact pad disposed on the interface layer, wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer, wherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure, wherein a second thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, and wherein the second thickness of the GaN-based semiconductor structure is less than 1/20 thick of the first thickness of the conductive support structure. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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20. A vertical topology light emitting device, comprising:
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a conductive support structure comprising Cu; an adhesion layer disposed on the conductive support structure; a p-type contact disposed on the adhesion layer; a GaN-based semiconductor structure disposed on the p-type contact, wherein the GaN-based semiconductor structure comprises an n-type GaN-based layer, a p-type GaN-based layer, and an active layer between the n-type GaN-based layer and the p-type GaN-based layer, wherein the n-type GaN-based layer has an etched flat surface, and wherein the GaN-based semiconductor structure includes a bottom surface proximate to the conductive support structure, a top surface opposite to the bottom surface, and a side surface between the top surface and the bottom surface; an interface layer on the GaN-based semiconductor structure comprising Al; and a contact pad disposed on the interface layer, wherein the interface layer comprises a portion which directly contacts the etched flat surface of the n-type GaN-based layer, wherein a first thickness of the conductive support structure is 0.5 times less than a width of the top surface of the GaN-based semiconductor structure, wherein a second thickness of the GaN-based semiconductor structure from the bottom surface to the top surface is less than 5 micrometers, wherein the second thickness of the GaN-based semiconductor structure is less than 1/20 thick of the first thickness of the conductive support structure, and wherein the p-type contact includes a reflective contact.
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Specification
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Current AssigneeSuzhou Lekin Semiconductor Company Limited
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Original AssigneeLG Innotek Company Limited (LG Corporation)
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InventorsYoo, Myung Cheol
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Primary Examiner(s)Smith, Bradley
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Application NumberUS16/567,795Publication NumberTime in Patent Office237 DaysField of SearchNoneUS Class CurrentCPC Class CodesH01L 33/007 comprising nitride compoundsH01L 33/0093 Wafer bonding; Removal of t...H01L 33/0095 Post-treatment of devices, ...H01L 33/04 with a quantum effect struc...H01L 33/12 with a stress relaxation st...H01L 33/14 with a carrier transport co...H01L 33/32 containing nitrogenH01L 33/38 with a particular shapeH01L 33/405 Reflective materialsH01L 33/42 Transparent materialsH01L 33/46 Reflective coating, e.g. di...H01L 33/54 having a particular shapeH01L 33/60 Reflective elementsH01L 33/62 Arrangements for conducting...H01L 33/641 characterized by the materialsH01L 33/647 the elements conducting ele...
