Photosensitive detection module, light source module and electrophoresis display apparatus

• US 10,649,250 B2
• Filed: 03/06/2018
• Issued: 05/12/2020
• Est. Priority Date: 01/03/2018
• Status: Active Grant

• Current Assignee: Shanghai AVIC Optoelectronics Company Limited (Tianma Microelectronics Company Limited)
• Original Assignee: Shanghai AVIC Optoelectronics Company Limited (Tianma Microelectronics Company Limited)
• Inventors: Xi, Kerui, Cui, Tingting, Li, Xiaohe
• Primary Examiner(s): Hasan, Mohammed A
• Application Number:
  US15/913,261
• Publication Number:
  US 20180203276A1
• Time in Patent Office: 798 Days
• Field of Search: 359296
• CPC Class Codes: G02F 1/13312 Circuits comprising photodetectors for purposes other than feedback
• CPC Class Codes: G02F 1/13318 Circuits comprising a photodetector
• CPC Class Codes: G02F 1/167 by electrophoresis
• CPC Class Codes: G02F 1/1677 Structural association of cells with optical devices, e.g. reflectors or illuminating devices
• CPC Class Codes: H01L 27/1214 comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
• CPC Class Codes: H01L 27/1443 with at least one potential jump or surface barrier
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/768 with field effect produced by an insulated gate
• CPC Class Codes: H01L 31/02019 for devices characterised by at least one potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/03682 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/09 Devices sensitive to infrared, visible or ultraviolet radiation H01L31/101 takes precedence
• CPC Class Codes: H01L 31/1136 the device being a metal-insulator-semiconductor field-effect transistor

Abstract

A photosensitive detection module is provided, comprising a photosensitive circuit, wherein the photosensitive circuit comprises a first resistive element, a second resistive element, a third resistive element, a fourth resistive element to form a resistor bridge, a first input terminal connected to a node between the first resistive element and the third resistive element, a second input terminal connected to a node between the second resistive element and the fourth resistive element, a first output terminal connected to a node between the first resistive element and the second resistive element, and a second output terminal connected to a node between the third resistive element and the fourth resistive element. All four resistive elements have an identical initial resistance value. The first resistive element and the fourth resistive element are photosensitive resistive elements.

Claims

1. A photosensitive detection module, comprising a photosensitive circuit, wherein the photosensitive circuit comprises:

a first resistive element, a second resistive element, a third resistive element, and a fourth resistive element to form a resistor bridge,

a first input terminal connected to a node between the first resistive element and the third resistive element;

a second input terminal connected to a node between the second resistive element and the fourth resistive element;

a first output terminal connected to a node between the first resistive element and the second resistive element; and

a second output terminal connected to a node between the third resistive element and the fourth resistive element,

wherein;

the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element have an identical initial resistance value;

the first resistive element and the fourth resistive element are photosensitive resistive elements, and a material forming the first resistive element and a material forming the fourth resistive element have an identical photosensitivity; and

a material forming the second resistive element and the material forming the fourth resistive element have an identical temperature sensitivity coefficient, and the material forming the first resistive element and a material forming the third resistive element have an identical temperature sensitivity coefficient.

2. The photosensitive detection module according to claim 1, further including:

a bias voltage supplying circuit connected to the first input terminal and the second input terminal and, configured to supply a bias voltage to the photosensitive circuit; and

a voltage detection circuit connected to the first output terminal and the second output terminal, and configured to detect an output voltage of the photosensitive circuit.

3. The photosensitive detection module according to claim 1, wherein:

the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element are identical resistive elements; and

the photosensitive detection module further includes a light-shielding element configured to shield the second resistive element and the third resistive element from being exposed to light irradiation.

4. The photosensitive detection module according to claim 1, wherein:

the photosensitive circuit further includes a first capacitor;

a top electrode of the first capacitor is connected to a node between the first resistive element and the second resistive element; and

a bottom electrode of the first capacitor is connected to a node between the third resistive element and the fourth resistive element.

5. The photosensitive detection module according to claim 4, wherein:

the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element each includes a thin-film-transistor;

the thin-film-transistor includes a channel region formed in a semiconductor active layer;

one of the top electrode of the first capacitor and the bottom electrode of the first capacitor is formed coplanar with a gate electrode of the thin-film-transistor; and

the other of the top electrode of the first capacitor and the bottom electrode of the first capacitor is formed coplanar with a source electrode of the thin-film-transistor.

6. The photosensitive detection module according to claim 1, wherein:

the first resistive element, the second resistive element, the third resistive element, and the fourth resistive element each includes a thin-film-transistor;

the thin-film-transistor includes a channel region formed in a semiconductor active layer;

a source electrode of the first resistive element and a source electrode of the third resistive element are connected to the first input terminal;

a drain electrode of the second resistive element and a drain electrode of the fourth resistive element are connected to the second input terminal;

a drain electrode of the first resistive element and a source electrode of the second resistive element are connected to the first output terminal;

a drain electrode of the third resistive element and a source electrode of the fourth resistive element are connected to the second output terminal;

the photosensitive detection module further includes a light-shielding element;

the light-shielding element shields the channel regions of the second resistive element and the third resistive element from being exposed to light irradiation;

the channel regions of the first resistive element and the fourth resistive element are exposed to ambient environment light; and

the drain electrode of the first resistive element, the drain electrode of the second resistive element, the drain electrode of the third resistive element, the drain electrode of the fourth resistive element each includes a plurality of first branches, and the source electrode of the first resistive element, the source electrode of the second resistive element, the source electrode of the third resistive element, and the source electrode of the fourth resistive element each includes a plurality of second branches.

7. The photosensitive detection module according to claim 6, wherein:

a gate electrode of the first resistive element is connected to the source electrode of the first resistive element;

a gate electrode of the second resistive element is connected to the source electrode of the second resistive element;

a gate electrode of the third resistive element is connected to the source electrode of the third resistive element; and

a gate electrode of the fourth resistive element is connected to the source electrode of the fourth resistive element.

8. The photosensitive detection module according to claim 6, wherein:

a gate electrode of the first resistive element, a gate electrode of the second resistive element, a gate electrode of the third resistive element, and a gate electrode of the fourth resistive element are floated.