Memory devices with distributed block select for a vertical string driver tile architecture

• US 10,650,895 B2
• Filed: 06/19/2019
• Issued: 05/12/2020
• Est. Priority Date: 11/17/2017
• Status: Active Grant

• Current Assignee: Micron Technology, Inc.
• Original Assignee: Micron Technology, Inc.
• Inventors: Lee, Eric N.
• Primary Examiner(s): Norman, James G
• Application Number:
  US16/446,234
• Publication Number:
  US 20190304542A1
• Time in Patent Office: 328 Days
• Field of Search: None
• CPC Class Codes: G11C 16/0483 comprising cells having several storage transistors connected in series
• CPC Class Codes: G11C 16/08 Address circuits; Decoders; Word-line control circuits
• CPC Class Codes: G11C 5/025 Geometric lay-out considerations of storage- and peripheral-blocks in a semiconductor storage device geometrical lay-out of the components in integrated circuits, H01L27/0207
• CPC Class Codes: G11C 8/08 Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
• CPC Class Codes: G11C 8/12 Group selection circuits, e.g. for memory block selection, chip selection, array selection

Abstract

Memory device having a tile architecture are disclosed. The memory device may include a first plane having multiple pairs of tiles, wherein at least some of the pairs of tiles of the first plane include a distributed block select circuit and page buffer circuitry. Another memory device may include a memory array, and a CMOS under array region. At least some tile regions may include portions of a total amount of block select circuitry distributed throughout the CUA region, vertical string drivers located outside of the memory array, and page buffer circuitry coupled with the memory array. Another memory device may include a first tile pair including a first tile, a second tile, a first vertical string driver therebetween, a first page buffer region that is greater than 50% of area for the first tile pair, and a first portion of a distributed block select circuitry.

Claims

1. A memory device having a tile architecture, the memory device comprising:

a first plane having multiple pairs of tiles, wherein at least some of the pairs of tiles of the first plane include a distributed block select circuit and page buffer circuitry, at least one portion of the distributed block select circuit within a first pair of tiles of the multiple pairs of tiles physically offset, in a first direction, from at least one other portion of the distributed block select circuit within a second pair of tiles of the multiple pairs of tiles, each pair of tiles of the multiple pair of tiles having an associated vertical string driver physically offset, in a second, different direction, from each of a first tile and a second tile of an associated pair of tiles.

2. The memory device of claim 1, wherein the block select circuit is distributed across all tiles in the first plane.

3. The memory device of claim 2, wherein the block select circuit is distributed evenly across all tiles in the first plane.

4. The memory device of claim 2, wherein the block select circuit is distributed unevenly across the tiles in the first plane.

5. The memory device of claim 1, wherein the block select circuit is distributed across only a subset of tiles in the first plane.

6. The memory device of claim 1, further comprising a second plane having multiple pairs of tiles.

7. The memory device of claim 1, further comprising a CMOS under array region including the first plane.

8. The memory device of claim 7, further comprising a memory array coupled with the CMOS under array region.

9. The memory device of claim 8, wherein the memory array is a three-dimensional memory array.

10. A memory device, comprising:

a number of pairs of tiles, each pair of tiles of the number of pairs of tiles including a first tile and a second tile, each of the first tile and the second tile including;

a portion of a distributed block select circuit for the number of pairs of tiles;

additional circuity; and

a page buffer having an area greater than a combined area of the portion of the distributed block select circuit and the additional circuitry of the associated tile.

11. The memory device of claim 10, further comprising a number of vertical string driver circuits, each vertical string driver circuit positioned between the first tile and the second tile of an associated pair of tiles and coupled to the portion of the distributed block select circuit of the first tile and the portion of the distributed block select circuit of the second tile.

12. The memory device of claim 10, further comprising:

a number of additional pairs of tiles, each pair of tiles of the number of additional pairs of tiles including a third tile and a fourth tile, each of the third tile and the fourth tile including;

a portion of another distributed block select circuit for the number of additional pairs of tiles; and

an additional page buffer having an area greater than 50% of an area of the associated tile.

13. The memory device of claim 12, further comprising a number of additional vertical string driver circuits, each additional vertical string driver circuit of the additional vertical string driver circuits positioned between the third tile and the fourth tile of an associated additional pair of tiles and coupled to the portion of the distributed block select circuitry of the third tile and the portion of the distributed block select circuitry of the fourth tile.

14. The memory device of claim 10, wherein the additional circuitry comprises periphery circuitry, a charge pump, a controller, or any combination thereof.

15. A memory device, comprising:

a first tile pair including a first tile, a second tile, and a first vertical string driver offset from the first tile and the second tile in a first direction, the first tile including a first portion of a distributed block select circuitry and the second tile including a second portion of the distributed block select circuitry; and

a second tile pair including a third tile, a fourth tile, and a second vertical string driver offset from the third tile and the fourth tile in the first direction, the third tile including a third portion of the distributed block select circuitry and the fourth tile including a fourth portion of the distributed block select circuitry;

wherein each of the first portion of the distributed block select circuity, the second portion of the distributed block select circuity, the third portion of the distributed block select circuity, and the fourth portion of the distributed block select circuity are offset from every other portion of the distributed block select circuitry in a second, different direction.

16. The memory device of claim 15, wherein each of the first tile pair and the second tile pair further includes a buffer region that is greater than 50% of an area for the associated tile pair.

17. The memory device of claim 15, further comprising a memory array coupled to the distributed block select circuitry.

18. The memory device of claim 15, wherein the first tile pair and the second tile pair each include a space adjacent to the respective distributed block select circuitry that includes peripheral circuitry for a memory array.

19. The memory device of claim 15, further comprising additional tile pairs, wherein at least some of the additional tile pairs include portions of the distributed block select circuitry.

20. The memory device of claim 19, wherein at least some of the additional tile pairs do not include any portions of the distributed block select circuitry.