High-voltage lateral GaN-on-silicon Schottky diode
First Claim
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1. A Schottky diode comprising:
- a gallium-nitride conduction layer;
a buffer layer formed between the gallium-nitride conduction layer and a substrate, wherein a combined thickness of the buffer layer and gallium-nitride conduction layer is at least 4.5 microns;
a barrier layer formed adjacent to the gallium-nitride conduction layer;
a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer;
an anode formed adjacent to the barrier layer between the first cathode and the second cathode, wherein the barrier layer extends under the anode between the anode and the gallium-nitride conduction layer; and
at least one anode-connected field plate electrically connected to the anode and extending on opposite edges beyond the anode toward the first cathode and the second cathode, wherein outer edges of any one of the at least one anode-connected field plate are spaced at least 3 microns from the first cathode and the second cathode and the Schottky diode is capable of withstanding a reverse bias voltage as much as 1000 volts, wherein the at least one anode-connected field plate comprises a first field plate contacting the anode and a second field plate above the first field plate and contacting the first field plate only at non-outer edge portions,wherein the at least one anode-connected filed plate comprises a first field plate contacting the anode and a second field plate above and contacting the first field plate only at non-outer-edge portions thereof.
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Abstract
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
78 Citations
24 Claims
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1. A Schottky diode comprising:
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a gallium-nitride conduction layer; a buffer layer formed between the gallium-nitride conduction layer and a substrate, wherein a combined thickness of the buffer layer and gallium-nitride conduction layer is at least 4.5 microns; a barrier layer formed adjacent to the gallium-nitride conduction layer; a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer; an anode formed adjacent to the barrier layer between the first cathode and the second cathode, wherein the barrier layer extends under the anode between the anode and the gallium-nitride conduction layer; and at least one anode-connected field plate electrically connected to the anode and extending on opposite edges beyond the anode toward the first cathode and the second cathode, wherein outer edges of any one of the at least one anode-connected field plate are spaced at least 3 microns from the first cathode and the second cathode and the Schottky diode is capable of withstanding a reverse bias voltage as much as 1000 volts, wherein the at least one anode-connected field plate comprises a first field plate contacting the anode and a second field plate above the first field plate and contacting the first field plate only at non-outer edge portions, wherein the at least one anode-connected filed plate comprises a first field plate contacting the anode and a second field plate above and contacting the first field plate only at non-outer-edge portions thereof. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23)
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24. A Schottky diode comprising:
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a gallium-nitride conduction layer; a buffer layer formed between the gallium-nitride conduction layer and a substrate; a barrier layer formed adjacent to the gallium-nitride conduction layer; a first cathode and a second cathode spaced apart and in electrical contact with the conduction layer; an anode formed adjacent to the barrier layer and laterally spaced between the first cathode and the second cathode; and a plurality of anode-connected field plates electrically connected to the anode and extending on opposite edges beyond the anode toward the first cathode and the second cathode, wherein an outer edge of a first anode-connected field plate adjacent to the anode does not contact an adjacent second anode-connected field plate and wherein the Schottky diode is capable of withstanding a reverse bias voltage as much as 1000 volts, wherein an edge of the anode is spaced no more than 10 microns from an edge of the first cathode, and wherein the first and second anode-connected field plates contact each other at their center portions.
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Specification