Apparatus and method for process-window characterization

• US 10,656,531 B2
• Filed: 12/08/2016
• Issued: 05/19/2020
• Est. Priority Date: 12/22/2015
• Status: Active Grant

• Current Assignee: ASML Netherlands BV (ASML Holding NV)
• Original Assignee: ASML Netherlands BV (ASML Holding NV)
• Inventors: Wang, Te-Sheng, Wan, Xiang
• Primary Examiner(s): Asfaw, Mesfin T
• Application Number:
  US16/061,501
• Publication Number:
  US 20190258169A1
• Time in Patent Office: 1,258 Days
• CPC Class Codes: G03F 7/705 Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
• CPC Class Codes: G03F 7/70558 Dose control, i.e. achievement of a desired dose
• CPC Class Codes: G03F 7/70616 Monitoring the printed patterns
• CPC Class Codes: G03F 7/70625 Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
• CPC Class Codes: G03F 7/70641 Focus

Abstract

A process of characterizing a process window of a patterning process, the process including: obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a set of the features, the set of features being selected from among the features according to sensitivity of the respective features to variation in one or more process characteristics of the patterning process; patterning one or more substrates under varying process characteristics of the patterning process; and determining, for each of the variations in the process characteristics, whether at least some of the set of features yield unacceptable patterned structures on the one or more substrates at corresponding inspection locations.

Claims

1. A method for characterizing a process window of a patterning process, the method comprising:

obtaining a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a subset of the features, the subset of features being selected from among the features according to sensitivity of the respective one or more features of the subset of features to variation in one or more process characteristics of the patterning process;

optically or physically patterning one or more substrates under variations of one or more process characteristics of the patterning process; and

determining, for each of the variations in the one or more process characteristics, whether at least some of the subset of features yielded one or more unacceptable patterned structures on the one or more substrates at corresponding one or more inspection locations.

2. The method of claim 1, wherein obtaining the set of inspection locations further comprises:

performing a plurality of computer simulations of the patterning process, each simulation under different values of one or more process characteristics;

for each of the different simulations, detecting features that the respective simulation indicates are unacceptable in a respective simulation result; and

selecting the subset of the features based on the detected features.

3. The method of claim 2, wherein selecting the subset of the features based on the detected features further comprises:

selecting one or more features based on sensitivity of the respective one or more features to change in a process characteristic of the patterning process in the simulated result, or

selecting at least some of the detected features based on an amount of change in a process characteristic in the simulations that yields an unacceptable simulated result for the respective feature.

4. The method of claim 2, wherein performing a computer simulation of the computer simulations further comprises:

obtaining a design layout of a patterning device corresponding to the pattern;

obtaining parameters of a lithographic apparatus;

selecting a set of process characteristics of the patterning process to simulate; and

estimating dimensions of a patterned structure on a substrate under the selected set of process characteristics with a lithographic apparatus having the obtained parameters.

5. The method of claim 1, further comprising determining a process window for at least some of the variations in the one or more process characteristics based on the determination of whether at least some of the subset of the features yielded one or more unacceptable patterned structures on the one or more substrates.

6. The method of claim 1, wherein determining whether at least some of the subset of features yielded one or more unacceptable pattern structures further comprises measuring the at least some of the subset of features at the respective inspection locations with an electron-beam inspection tool.

7. The method of claim 1, wherein different inspection locations are specified for different exposure fields based on process conditions corresponding to the respective exposure fields.

8. The method of claim 1, further comprising:

ranking the features based on sensitivity to variations in one or more process characteristics of the patterning process; and

selecting the subset of features based on the ranking.

9. The method of claim 1, further comprising specifying an inspection metric based on sensitivity of at least some of the features to variation in a process characteristic.

10. The method of claim 1, further comprising:

determining ranges of the one or more process characteristics that produce acceptable results; and

monitoring a patterning process by sensing whether the patterning process remains within the ranges of the one or more process characteristics.

11. A method comprising:

obtaining an inspection location for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the inspection location corresponding to a feature of the pattern, the feature being selected from among the features according to sensitivity of the respective feature to variation in one or more process characteristics of the patterning process;

optically or physically patterning one or more substrates under variations of one or more process characteristics of the patterning process; and

determining, for at least some of the variations in the one or more process characteristics, whether the feature yielded an unacceptable patterned structure on the one or more substrates at the corresponding inspection location.

12. The method of claim 11, wherein obtaining the inspection location further comprises:

performing a plurality of computer simulations of the patterning process, each simulation under different values of one or more process characteristics;

for each of the different simulations, detecting features that the respective simulation indicates are unacceptable in a respective simulation result; and

selecting the feature based on the detected features.

13. The method of claim 12, wherein performing a computer simulation of the computer simulations further comprises:

obtaining a design layout of a patterning device corresponding to the pattern;

obtaining parameters of a lithographic apparatus;

selecting a set of process characteristics of the patterning process to simulate; and

estimating dimensions of a patterned structure on a substrate under the selected set of process characteristics with a lithographic apparatus having the obtained parameters.

14. The method of claim 11, further comprising determining a process window for at least some of the variations in the one or more process characteristics based on the determination of whether the feature yielded an unacceptable patterned structure on the one or more substrates.

15. A tangible, non-transitory, machine-readable medium storing instructions, the instructions, upon execution by a data processing apparatus, are configured to cause the data processing apparatus to at least:

obtain a set of inspection locations for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the set of inspection locations corresponding to a subset of the features, the subset of features being selected from among the features according to sensitivity of the respective one or more features of the subset of features to variation in one or more process characteristics of the patterning process;

simulate a patterning process with a plurality of different simulations, each under different values of one or more process characteristics, and each with at least some of the same features in a pattern; and

determine, for each of the different values of one or more process characteristics, whether at least some of the subset of features yielded one or more unacceptable patterned structures on the one or more substrates at corresponding one or more inspection locations.

16. The medium of claim 15, wherein the instructions configured to obtain the set of inspection locations are further configured to:

perform a plurality of computer simulations of the patterning process, each simulation under different values of one or more process characteristics and/or using different sets of one or more process characteristics;

for each of the different simulations, detect features that the respective simulation indicates are unacceptable in a respective simulation result; and

select the subset of the features based on the detected features.

17. The medium of claim 16, wherein the instructions configured to select the subset of the features based on the detected features are further configured to:

select one or more features based on sensitivity of the respective one or more features to changes in a process characteristic of the patterning process in the simulated result, or

select at least some of the detected features based on an amount of change in a process characteristic in the simulations that yields an unacceptable simulated result for the respective feature.

18. The medium of claim 15, wherein the instructions are further configured to determine a process window for at least some of the different values of one or more process characteristics based on the determination of whether at least some of the subset of the features yielded one or more unacceptable patterned structures on the one or more substrates.

19. The medium of claim 15, wherein different inspection locations are specified for different exposure fields based on process conditions corresponding to the respective exposure fields.

20. The medium of claim 15, wherein the instructions are further configured to specify an inspection metric based on sensitivity of at least some of the features to variation in a process characteristic.

21. A tangible, non-transitory, machine-readable medium storing instructions, the instructions, upon execution by a data processing apparatus, are configured to cause the data processing apparatus to at least:

obtain an inspection location for a pattern, the pattern defining features to be applied to a substrate with a patterning process, the inspection location corresponding to a feature of the pattern, the feature being selected from among the features according to sensitivity of the respective feature to variation in one or more process characteristics of the patterning process;

obtain measurement results from one or more substrates optically or physically patterned under variations of one or more process characteristics of the patterning process; and

determine, for at least some of the variations in the one or more process characteristics and based on the measurement results, whether the feature yielded an unacceptable patterned structure on the one or more substrates at the corresponding inspection location.