Semiconductor integrated circuit device
First Claim
1. A semiconductor integrated circuit device having an ESD (Electro Static Discharge) protection circuit, wherein:
- the ESD protection circuit comprises;
a first wiring electrically connected to a first terminal;
a second wiring and a third wiring electrically connected to a power supply terminal or a ground terminal;
a first region and a second region having a first conductivity type, that are connected to the first wiring, the first and second regions being separated from each other and serving as one of an anode or a cathode of a diode;
a third region having a second conductivity type different from the first conductivity type, that is connected to the second wiring and disposed so as to be opposed to the first region in a first direction;
a fourth region having the second conductivity type, that is connected to the third wiring and disposed so as to be opposed to the second region in the first direction, and the third and fourth regions serving as the other of an anode or a cathode of the diode; and
a fifth region having the second conductivity type,the third region, the first region, the second region and the fourth region are disposed in this order in the first direction, andthe fifth region is disposed so as to be opposed to the first region in a second direction perpendicular to the first direction.
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Accused Products
Abstract
Diffusion regions having the same conductivity type are arranged on a side of a second wiring and a side of a third wiring, respectively under a first wiring connected to a signal terminal. Diffusion regions are separated in a whole part or one part of a range in a Y direction. That is, under first wiring, diffusion regions are only formed in parts opposed to diffusion regions formed under the second wiring and third wiring connected to a power supply terminal or a ground terminal, and a diffusion region is not formed in a central part in an X direction. Therefore, terminal capacity of the signal terminal can be reduced without causing ESD resistance to be reduced, in an ESD protection circuit with the signal terminal.
22 Citations
19 Claims
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1. A semiconductor integrated circuit device having an ESD (Electro Static Discharge) protection circuit, wherein:
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the ESD protection circuit comprises; a first wiring electrically connected to a first terminal; a second wiring and a third wiring electrically connected to a power supply terminal or a ground terminal; a first region and a second region having a first conductivity type, that are connected to the first wiring, the first and second regions being separated from each other and serving as one of an anode or a cathode of a diode; a third region having a second conductivity type different from the first conductivity type, that is connected to the second wiring and disposed so as to be opposed to the first region in a first direction; a fourth region having the second conductivity type, that is connected to the third wiring and disposed so as to be opposed to the second region in the first direction, and the third and fourth regions serving as the other of an anode or a cathode of the diode; and a fifth region having the second conductivity type, the third region, the first region, the second region and the fourth region are disposed in this order in the first direction, and the fifth region is disposed so as to be opposed to the first region in a second direction perpendicular to the first direction. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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12. A semiconductor integrated circuit device having an ESD (Electro Static Discharge) protection circuit, wherein:
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the ESD protection circuit comprises; a first wiring and a second wiring electrically connected to a first terminal; a third wiring, a fourth wiring and a fifth wiring electrically connected to a power supply terminal or a ground terminal; a first region and a second region having a first conductivity type, that are connected to the first wiring, the first and second regions being separated from each other; a third region and a fourth region having the first conductivity type, that are connected to the second wiring, the third and fourth regions being separated from each other, and the first, second, third and fourth regions serving as one of an anode or a cathode of a diode; a fifth region having a second conductivity type different from the first conductivity type, that is connected to the third wiring and disposed so as to be opposed to the first region in a first direction; a sixth region having the second conductivity type, that is connected to the fourth wiring and disposed so as to be opposed to the second region in the first direction; a seventh region having the second conductivity type, that is connected to the fifth wiring and disposed so as to be opposed to the fourth region in the first direction, and the fifth, the sixth and the seventh regions serving as the other of an anode or a cathode of the diode; and an eighth region and a ninth region having the second conductivity type, the fifth region, the first region, the second region, the sixth region, the third region, the fourth region and the seventh region are disposed in this order in the first direction, the eighth region is disposed so as to be opposed to the first region in a second direction perpendicular to the first direction, and the ninth region is disposed so as to be opposed to the third region in the second direction. - View Dependent Claims (13, 14, 15, 16, 17, 18, 19)
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Specification