Virtual drain for decreased harmonic generation in fully depleted SOI (FDSOI) RF switches
First Claim
Patent Images
1. A structure comprising:
- one or more active devices on a semiconductor on insulator material which is on top of a substrate;
a virtual drain region comprising a well region within the substrate and spaced apart from an active region of the one or more devices, the virtual drain region configured to be biased to collect electrons which would accumulate in the substrate, and the virtual drain region being spaced apart from a source/drain region of an adjacent device of the one or more active devices;
a shallow trench isolation region partly within the virtual drain region, wherein an edge of the virtual drain region is remote from an edge of the shallow trench isolation region; and
a doped skin on the shallow trench isolation region, facing the adjacent device of the one or more active devices.
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Abstract
The present disclosure relates to semiconductor structures and, more particularly, to virtual drains for decreased harmonic generation in fully depleted SOI (FDSOI) RF switches and methods of manufacture. The structure includes one or more active devices on a semiconductor on insulator material which is on top of a substrate; and a virtual drain region composed of a well region within the substrate and spaced apart from an active region of the one or more devices, the virtual drain region configured to be biased to collect electrons which would accumulate in the substrate.
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Citations
14 Claims
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1. A structure comprising:
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one or more active devices on a semiconductor on insulator material which is on top of a substrate; a virtual drain region comprising a well region within the substrate and spaced apart from an active region of the one or more devices, the virtual drain region configured to be biased to collect electrons which would accumulate in the substrate, and the virtual drain region being spaced apart from a source/drain region of an adjacent device of the one or more active devices; a shallow trench isolation region partly within the virtual drain region, wherein an edge of the virtual drain region is remote from an edge of the shallow trench isolation region; and a doped skin on the shallow trench isolation region, facing the adjacent device of the one or more active devices. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A structure comprising:
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a substrate; an insulating material on the substrate; a fully depleted semiconductor material on the insulating material; a plurality of active devices on the fully depleted semiconductor material; a virtual drain region within the substrate, adjacent to at least active device of the plurality of active devices, and which is spaced apart from a drain/source region of an adjacent active device of the plurality of devices; and a contact which biases the virtual drain region to collect electrons from beneath the plurality of active devices; and a shallow trench region partially in the virtual drain region and having an edge extending closer to the adjacent active device than the virtual drain region. - View Dependent Claims (10, 11, 12, 13)
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14. A structure comprising:
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one or more active devices on a semiconductor on insulator material which is on top of a substrate; a virtual drain region comprising a well region within the substrate and spaced apart from an active region of the one or more devices, the virtual drain region configured to be biased to collect electrons which would accumulate in the substrate; a shallow trench isolation region partly within the virtual drain region, wherein an edge of the virtual drain region is remote from an edge of the shallow trench isolation region; and a metal line formed above the shallow trench isolation region on an insulator material, wherein the metal line provides a voltage bias to the shallow trench isolation region to attract the electrons for collection in the virtual drain region, and the virtual drain region is spaced apart from a source/drain region of an adjacent device of the one or more active devices.
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Specification