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Semiconductor device and method of manufacturing thereof

  • US 10,658,418 B2
  • Filed: 04/30/2018
  • Issued: 05/19/2020
  • Est. Priority Date: 09/24/2015
  • Status: Active Grant
First Claim
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1. A semiconductor device, comprising:

  • a first semiconductor layer of a first conductivity type having a first surface on one side thereof and a second surface on an opposite side thereof, and having an element therein;

    a second semiconductor layer of a second conductivity type having a circuit element formed therein, the second semiconductor layer being formed at the one side of the first surface of the first semiconductor layer;

    an insulating layer disposed on the first surface of the first semiconductor layer; and

    a charge-attracting layer configured to attract electrical charges generated in the insulating layer when a predetermined voltage is supplied to the charge-attracting layer.

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