Method of manufacturing light emitting device

• US 10,658,423 B2
• Filed: 06/27/2019
• Issued: 05/19/2020
• Est. Priority Date: 02/28/2017
• Status: Active Grant

• Current Assignee: Nichia Corporation
• Original Assignee: Nichia Corporation
• Inventors: Daikoku, Shinichi, Nishiyama, Hirofumi
• Primary Examiner(s): Oh, Jaehwan
• Application Number:
  US16/455,549
• Publication Number:
  US 20190319065A1
• Time in Patent Office: 327 Days
• CPC Class Codes: H01L 27/156 two-dimensional arrays
• CPC Class Codes: H01L 2933/0016 relating to electrodes
• CPC Class Codes: H01L 2933/0025 relating to coatings
• CPC Class Codes: H01L 2933/0033 relating to semiconductor body packages
• CPC Class Codes: H01L 2933/0058 relating to optical field-shaping elements
• CPC Class Codes: H01L 2933/0066 relating to arrangements for conducting electric current to or from the semiconductor body
• CPC Class Codes: H01L 33/0093 Wafer bonding; Removal of the growth substrate
• CPC Class Codes: H01L 33/30 containing only elements of Group III and Group V of the Periodic Table
• CPC Class Codes: H01L 33/32 containing nitrogen
• CPC Class Codes: H01L 33/46 Reflective coating, e.g. dielectric Bragg reflector
• CPC Class Codes: H01L 33/502 Wavelength conversion materials
• CPC Class Codes: H01L 33/60 Reflective elements
• CPC Class Codes: H01L 33/62 Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Abstract

A method of manufacturing a light emitting device includes: providing a wafer that comprises: a supporting substrate, and a plurality of light emitting structures arranged in a two-dimensional array on a first principal surface of the supporting substrate along a first direction and a second direction, each of the plurality of light emitting structures comprising a first semiconductor layer, which includes a first region and a second region, and a second semiconductor layer, which covers the second region of the first semiconductor layer, wherein the plurality of light emitting structures includes a first light emitting structure and a second light emitting structure; forming a recess in the first principal surface of the supporting substrate between the first light emitting structure and the second light emitting structure; forming a resin layer in the recess; and removing the supporting substrate so as to expose the first semiconductor layer.

Claims

1. A method of manufacturing a light emitting device, the method comprising:

providing a wafer that comprises;

a supporting substrate, and

a plurality of light emitting structures arranged in a two-dimensional array on a first principal surface of the supporting substrate along a first direction and a second direction, each of the plurality of light emitting structures comprising a first semiconductor layer of a first conductivity type, which includes a first region and a second region, and a second semiconductor layer of a second conductivity type, which covers the second region of the first semiconductor layer, wherein the plurality of light emitting structures includes a first light emitting structure and a second light emitting structure;

forming a recess in the first principal surface of the supporting substrate between the first light emitting structure and the second light emitting structure;

forming a resin layer in the recess; and

removing the supporting substrate so as to expose the first semiconductor layer.

2. The method according to claim 1, further comprising:

between the step of forming the recess and the step of forming the resin layer, forming a reflecting film covering the plurality of light emitting structures and a surface defining the recess.

3. The method according to claim 1, further comprising:

between the step of forming the resin layer and the step of removing the supporting substrate, forming a plurality of wirings on the resin layer that electrically connect the plurality of light emitting structures.

4. The method according to claim 1, wherein:

the step of forming the recess comprises forming a first inclined surface and a second inclined surface that are inclined with respect to the first principal surface of the supporting substrate.

5. The method according to claim 2, wherein:

the step of forming the recess comprises forming a first inclined surface and a second inclined surface that are inclined with respect to the first principal surface of the supporting substrate.

6. The method according to claim 4, wherein the first semiconductor layer of the first light emitting structure has a side surface that is flush with the first inclined surface of the recess, and the first semiconductor layer of the second light emitting structure has a side surface that is flush with the second inclined surface of the recess.

7. The method according to claim 5, wherein:

the first semiconductor layer of the first light emitting structure has a side surface that is flush with the first inclined surface of the recess, and the first semiconductor layer of the second light emitting structure has a side surface that is flush with the second inclined surface of the recess.

8. The method according to claim 2, wherein:

in the step of forming the reflecting film, the reflecting film defines a plurality of first through-holes and a plurality of second through-holes, each of the first through-holes being disposed above the first region of the first semiconductor layer of a respective one of the light emitting structures, each of the second through-holes being disposed above the second semiconductor layer of a respective one of the light emitting structures.

9. The method according to claim 8, further comprising:

between the step of forming the resin layer and the step of removing the supporting substrate, forming a plurality of wirings on the resin layer that electrically connect the plurality of light emitting structures.

10. The method according to claim 9, wherein:

in the step of forming the plurality of wirings, the plurality of wirings comprise;

a plurality of first wirings, each being electrically connected with the first semiconductor layers of a first subset of the plurality of light emitting structures via the first through-holes, and

a plurality of second wirings, each being electrically connected with the second semiconductor layers of a second subset of the plurality of light emitting structures via the second through-holes.

11. The method according to claim 10, wherein:

the first subset of the plurality of light emitting structures are arranged in a column of the array, and

the second subset of the plurality of light emitting structures are arranged in a row of the array.

12. The method according to claim 5, wherein:

in the step of forming the reflecting film, the reflecting film defines a plurality of first through-holes and a plurality of second through-holes, each of the first through-holes being disposed above the first region of the first semiconductor layer of a respective one of the light emitting structures, each of the second through-holes being disposed above the second semiconductor layer of a respective one of the light emitting structures.

13. The method according to claim 12, further comprising:

between the step of forming the resin layer and the step of removing the supporting substrate, forming a plurality of wirings on the resin layer that electrically connect the plurality of light emitting structures.

14. The method according to claim 13, wherein:

in the step of forming the plurality of wirings, the plurality of wirings comprise;

a plurality of first wirings, each being electrically connected with the first semiconductor layers of a first subset of the plurality of light emitting structures via the first through-holes, and

a plurality of second wirings, each being electrically connected with the second semiconductor layers of a second subset of the plurality of light emitting structures via the second through-holes.

15. The method according to claim 14, wherein:

the first subset of the plurality of light emitting structures are arranged in a column of the array, and

the second subset of the plurality of light emitting structures are arranged in a row of the array.

16. The method according to claim 1, wherein:

the supporting substrate is a Si substrate.

17. The method according to claim 2, wherein:

the supporting substrate is a Si substrate.

18. The method according to claim 4, wherein:

the supporting substrate is a Si substrate.

19. The method according to claim 5, wherein:

the supporting substrate is a Si substrate.

20. The method according to claim 1, wherein:

the reflecting film is a multilayer dielectric film.

21. The method according to claim 2, wherein:

the reflecting film is a multilayer dielectric film.

22. The method according to claim 4, wherein:

the reflecting film is a multilayer dielectric film.

23. The method according to claim 5, wherein:

the reflecting film is a multilayer dielectric film.