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Light emitting diode having patterned mirror layer

  • US 10,658,547 B2
  • Filed: 08/01/2018
  • Issued: 05/19/2020
  • Est. Priority Date: 08/27/2014
  • Status: Active Grant
First Claim
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1. A light emitting diode (LED) structure, comprising:

  • a stacked semiconductor layer comprising;

    a first type doped layer;

    a second type doped layer; and

    an active layer disposed between the first type doped layer and the second type doped layer;

    a recess penetrating the second type doped layer and the active layer, wherein a bottom of the recess exposes the first type doped layer;

    a contact layer disposed on the second type doped layer;

    a dielectric reflective layer covering the contact layer and the first type doped layer by extending into the recess, the dielectric reflective layer comprising a cave formed on the second type doped layer and on the contact layer;

    a patterned mirror layer formed on the contact layer, one part of the patterned mirror layer connecting to the cave of the dielectric reflective layer and another one part of the patterned mirror layer being covered by the dielectric reflective layer, wherein in a cross-sectional view of the light emitting diode (LED) structure the one part of the patterned mirror layer comprises a width larger than that of the another one part of the patterned mirror layer;

    a conductive layer contacting the first doped layer and electrically connected to the first doped layer through the recess; and

    an electrode layer disposed on the dielectric reflective layer, wherein the electrode layer comprises a first electrode region and a second electrode region, wherein the first electrode region comprises a first top surface comprising a first concave portion corresponding to the recess, and wherein the second electrode region comprises a second top surface comprising a second concave portion corresponding to the cave.

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