Light emitting diode having patterned mirror layer
First Claim
1. A light emitting diode (LED) structure, comprising:
- a stacked semiconductor layer comprising;
a first type doped layer;
a second type doped layer; and
an active layer disposed between the first type doped layer and the second type doped layer;
a recess penetrating the second type doped layer and the active layer, wherein a bottom of the recess exposes the first type doped layer;
a contact layer disposed on the second type doped layer;
a dielectric reflective layer covering the contact layer and the first type doped layer by extending into the recess, the dielectric reflective layer comprising a cave formed on the second type doped layer and on the contact layer;
a patterned mirror layer formed on the contact layer, one part of the patterned mirror layer connecting to the cave of the dielectric reflective layer and another one part of the patterned mirror layer being covered by the dielectric reflective layer, wherein in a cross-sectional view of the light emitting diode (LED) structure the one part of the patterned mirror layer comprises a width larger than that of the another one part of the patterned mirror layer;
a conductive layer contacting the first doped layer and electrically connected to the first doped layer through the recess; and
an electrode layer disposed on the dielectric reflective layer, wherein the electrode layer comprises a first electrode region and a second electrode region, wherein the first electrode region comprises a first top surface comprising a first concave portion corresponding to the recess, and wherein the second electrode region comprises a second top surface comprising a second concave portion corresponding to the cave.
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Abstract
A light emitting diode (LED) structure including a stacked semiconductor layer, a contact layer and a dielectric reflective layer is provided. The stacked semiconductor layer includes a first type doped layer, a second type doped layer and an active layer disposed between the first type doped layer and the second type doped layer, wherein the first type doped layer, the active layer and the second type doped layer are penetrated by a plurality of recesses. The contact layer is disposed on the second type doped layer. The dielectric reflective layer is disposed on the contact layer and extended into the recesses to connect the contact layer and the first type doped layer with a coverage rate equal to or less than 60% from a top view of the LED structure.
9 Citations
17 Claims
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1. A light emitting diode (LED) structure, comprising:
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a stacked semiconductor layer comprising; a first type doped layer; a second type doped layer; and an active layer disposed between the first type doped layer and the second type doped layer; a recess penetrating the second type doped layer and the active layer, wherein a bottom of the recess exposes the first type doped layer; a contact layer disposed on the second type doped layer; a dielectric reflective layer covering the contact layer and the first type doped layer by extending into the recess, the dielectric reflective layer comprising a cave formed on the second type doped layer and on the contact layer; a patterned mirror layer formed on the contact layer, one part of the patterned mirror layer connecting to the cave of the dielectric reflective layer and another one part of the patterned mirror layer being covered by the dielectric reflective layer, wherein in a cross-sectional view of the light emitting diode (LED) structure the one part of the patterned mirror layer comprises a width larger than that of the another one part of the patterned mirror layer; a conductive layer contacting the first doped layer and electrically connected to the first doped layer through the recess; and an electrode layer disposed on the dielectric reflective layer, wherein the electrode layer comprises a first electrode region and a second electrode region, wherein the first electrode region comprises a first top surface comprising a first concave portion corresponding to the recess, and wherein the second electrode region comprises a second top surface comprising a second concave portion corresponding to the cave. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A light emitting diode (LED) structure, comprising:
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a substrate comprising a surface; a stacked semiconductor layer formed on the surface of the substrate, comprising; a first type doped layer; a second type doped layer; and an active layer disposed between the first type doped layer and the second type doped layer, wherein a part of the surface of the substrate is exposed from the stacked semiconductor layer to form an exposed area; a recess penetrating the second type doped layer and the active layer, wherein a bottom of the recess exposes the first type doped layer; a contact layer disposed on the second type doped layer; a dielectric reflective layer covering the contact layer and the first type doped layer by extending into the recess the dielectric reflective layer comprising a cave formed on the second type doped layer and on the contact layer; a patterned mirror layer formed on the contact layer, one part of the patterned mirror layer connecting to the cave of the dielectric reflective layer and another one part of the patterned mirror layer being covered by the dielectric reflective layer, wherein in a cross-sectional view of the light emitting diode (LED) structure, the one part of the patterned mirror layer comprises a width larger than that of the another one part of the patterned mirror layer; a conductive layer contacting the first doped layer and electrically connected to the first doped layer through the recess; and an electrode layer disposed on the dielectric reflective layer, wherein the electrode layer comprises a first electrode region and a second electrode region, wherein the first electrode region comprises a first top surface comprising a first concave portion corresponding to the recess, wherein the second electrode region comprises a second top surface comprising a second concave portion corresponding to the cave, and wherein a portion of the first electrode region or the second electrode region is formed on the exposed area of the substrate. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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Specification