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Radio frequency switch

  • US 10,659,031 B2
  • Filed: 07/30/2018
  • Issued: 05/19/2020
  • Est. Priority Date: 07/30/2018
  • Status: Active Grant
First Claim
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1. A radio frequency switch comprising a first node, a second node, and a plurality of switch cells that is coupled in series between the first node and the second node, wherein each of the plurality of switch cells comprises:

  • a switch field-effect transistor (FET) comprising a switch drain terminal, a switch source terminal, a switch gate terminal, and a switch body terminal; and

    a body bias network comprising;

    a first body bias FET having a first drain terminal coupled to the switch body terminal, a first gate terminal, and a first source terminal;

    a first cross-FET having a second drain terminal coupled to the first source terminal, a second source terminal coupled to the switch gate terminal, and a second gate terminal;

    a second body bias FET having a third drain terminal coupled to the switch body terminal, a third gate terminal, and a third source terminal; and

    a second cross-FET having a fourth drain terminal coupled to the third source terminal, a fourth source terminal coupled to the switch gate terminal, and a fourth gate terminal, wherein the first gate terminal of the first body bias FET is coupled to the fourth gate terminal of the second cross-FET, and the third gate terminal of the second body bias FET is coupled to the second gate terminal of the first cross-FET.

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