Metal core solder ball and heat dissipation structure for semiconductor device using the same
First Claim
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1. An electrically connecting and heat dissipation structure for a semiconductor device comprising:
- a connection terminal of the semiconductor device;
an electrode of a substrate facing the connection terminal;
a solder ball comprising a metal core having a diameter of 40-600 μ
m, a first plating layer formed on an outer surface of the metal core, and a second plating layer formed on an outer surface of the first plating layer and comprising an SnAgCu, SnCu, SnMg, or SnAl alloy; and
a bonding portion comprising solder paste brass powder between the electrode of the substrate and the solder ball,wherein the
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Abstract
Disclosed is a metal core solder ball having improved heat conductivity, including a metal core having a diameter of 40˜600 μm, a first plating layer formed on the outer surface of the metal core, and a second plating layer formed on the outer surface of the first plating layer.
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Citations
2 Claims
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1. An electrically connecting and heat dissipation structure for a semiconductor device comprising:
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a connection terminal of the semiconductor device; an electrode of a substrate facing the connection terminal; a solder ball comprising a metal core having a diameter of 40-600 μ
m, a first plating layer formed on an outer surface of the metal core, and a second plating layer formed on an outer surface of the first plating layer and comprising an SnAgCu, SnCu, SnMg, or SnAl alloy; anda bonding portion comprising solder paste brass powder between the electrode of the substrate and the solder ball, wherein the - View Dependent Claims (2)
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Specification