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Metal core solder ball and heat dissipation structure for semiconductor device using the same

  • US 10,661,394 B2
  • Filed: 11/18/2013
  • Issued: 05/26/2020
  • Est. Priority Date: 01/03/2013
  • Status: Active Grant
First Claim
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1. An electrically connecting and heat dissipation structure for a semiconductor device comprising:

  • a connection terminal of the semiconductor device;

    an electrode of a substrate facing the connection terminal;

    a solder ball comprising a metal core having a diameter of 40-600 μ

    m, a first plating layer formed on an outer surface of the metal core, and a second plating layer formed on an outer surface of the first plating layer and comprising an SnAgCu, SnCu, SnMg, or SnAl alloy; and

    a bonding portion comprising solder paste brass powder between the electrode of the substrate and the solder ball,wherein the

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