Micro-electro-mechanical-systems processing method, and micro-electro-mechanical-systems processing apparatus

• US 10,662,059 B2
• Filed: 06/22/2018
• Issued: 05/26/2020
• Est. Priority Date: 08/25/2017
• Status: Active Grant

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Watanabe, Keiji, Shichi, Hiroyasu, Sagawa, Misuzu, Mine, Toshiyuki, Ryuzaki, Daisuke
• Primary Examiner(s): Ahmed, Shahed
• Application Number:
  US16/015,640
• Publication Number:
  US 20190062157A1
• Time in Patent Office: 704 Days
• CPC Class Codes: B81C 1/00412 Mask characterised by its behaviour during the etching process, e.g. soluble masks
• CPC Class Codes: B81C 2201/0143 Focussed beam, i.e. laser, ion or e-beam
• CPC Class Codes: B81C 2201/0159 Lithographic techniques not provided for in B81C2201/0157
• CPC Class Codes: B81C 2201/0198 for making a masking layer
• CPC Class Codes: B81C 99/0025 Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems not provided for in B81C99/001 - B81C99/002
• CPC Class Codes: B81C 99/0065 Process control; Yield prediction
• CPC Class Codes: G03F 7/2059 using a scanning corpuscular radiation beam, e.g. an electron beam
• CPC Class Codes: H01J 2237/28 Scanning microscopes
• CPC Class Codes: H01J 2237/31749 Focused ion beam
• CPC Class Codes: H01J 2237/31755 using ion beams
• CPC Class Codes: H01J 2237/31776 Shaped beam
• CPC Class Codes: H01J 37/1474 Scanning means
• CPC Class Codes: H01J 37/304 Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
• CPC Class Codes: H01J 37/3056 for microworking, e.g. etching of gratings, trimming of electrical components trimming of resistors H01C17/22
• CPC Class Codes: H01J 37/3174 Particle-beam lithography, e.g. electron beam lithography

Abstract

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view.

The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

Claims

1. A micro-electro-mechanical-systems processing method, comprising:

in a first step,

irradiating a plurality of single field-of-view points with a charged particle beam in a first region of a sample;

measuring a shape of a spot hole formed in the first region of the sample; and

setting, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points; and

in a second step,

irradiating, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

2. The micro-electro-mechanical-systems processing method according to claim 1, wherein

the first step further comprises setting, as the scan condition, a scan pitch and an irradiation time of the charged particle beam at each of the single field-of-view points based on the measurement results of the shape of the spot hole.

3. The micro-electro-mechanical-systems processing method according to claim 2, wherein

the first step further comprises calculating a ratio of the scan pitch and the irradiation time at each of the single field-of-view points to the scan pitch and the irradiation at a center of a beam axis of the charged particle beam.

4. The micro-electro-mechanical-systems processing method according to claim 2,

wherein the first step further comprises setting, as the scan condition, the scan pitch and the irradiation time of the charged particle beam at the single field-of-view point not irradiated with the charged particle beam, based on the scan pitch and the irradiation time of the charged particle beam at the single field-of-view point irradiated with the charged particle beam.

5. The micro-electro-mechanical-systems processing method according to claim 4,

wherein the first step further comprises calculating a ratio of the scan pitch and the irradiation time at the single field-of-view point not irradiated with the charged particle to the scan pitch and the irradiation time at the center of the beam axis of the charged particle beam.

6. The micro-electro-mechanical-systems processing method according to claim 1,

wherein the first step further comprises:

irradiating each of the single field-of-view points with the charged particle beam under a plurality of beam conditions; and

setting the scan condition corresponding to each of the plurality of beam conditions.

7. The micro-electro-mechanical-systems processing method according to claim 1, wherein

in first step further comprises:

irradiating the first region with the charged particle beam formed by the forming mask; and

setting the scan condition in a case of using the same forming mask; and

in second step further comprises;

irradiating the second region of the sample with the charged particle beam formed by the same forming mask as in the first step.

8. The micro-electro-mechanical-systems processing method according to claim 1, wherein

in first step further comprises measuring the shape of the spot hole by a secondary electron image obtained by irradiation of the charged particle beam from the irradiation unit.